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17150-84-4

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17150-84-4 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 17150-84-4 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,7,1,5 and 0 respectively; the second part has 2 digits, 8 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 17150-84:
(7*1)+(6*7)+(5*1)+(4*5)+(3*0)+(2*8)+(1*4)=94
94 % 10 = 4
So 17150-84-4 is a valid CAS Registry Number.

17150-84-4SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 20, 2017

Revision Date: Aug 20, 2017

1.Identification

1.1 GHS Product identifier

Product name tris(2-methylpropyl)gallane

1.2 Other means of identification

Product number -
Other names triisobutylgallane

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:17150-84-4 SDS

17150-84-4Upstream product

17150-84-4Downstream Products

17150-84-4Related news

Applications of MBMS and surface spectroscopic techniques in the study of reaction mechanisms in CBE; investigations of the reactivity of tritertiarybutylgallium and Triisobutylgallium (cas 17150-84-4) as alternative precursors for epilayer growth08/15/2019

Current approaches to the study of reaction mechanisms in CBE and investigations of the potential of triisobutylgallium and tritertiarybutylgallium as novel CBE precursors are reviewed. Surface spectroscopic techniques indicate that adsorbed iso-butyl radicals decompose to produce gaseous butene...detailed

Some comparisons of chemical beam epitaxy InGaAs/InP growth using triethylgallium, triisopropylgallium and Triisobutylgallium (cas 17150-84-4) sources08/14/2019

The chemical beam epitaxy (CBE) growth of InGaAs lattice matched to InP has been compared using the three Ga precursors triethylgallium (TEG), triisobutylgallium (TIBG) and triisopropylgallium (TIPG) in conjunction with trimethylindium (TMI). All three Ga precursors exhibit similar behaviour, wi...detailed

Dynamical approach to the surface reaction of Triisobutylgallium (cas 17150-84-4) (TIBGa) on GaAs(0 0 1) by using molecular beam scattering08/13/2019

The surface decomposition of triisobutylgallium (TIBGa) on GaAs(0 0 1) has been studied employing supersonic molecular beam scattering. It was found that TIBGa molecules were adsorbed on GaAs(0 0 1) surfaces without dissociation at temperatures lower than 200°C through a precursor mediated adso...detailed

17150-84-4Relevant articles and documents

Preparation of organogallium compounds from organolithium reagents and gallium chloride. Infrared, magnetic resonance, and mass spectral studies of alkylgallium compounds

Kovar, Roger A.,Derr, Henry,Brandau, Duane,Callaway, John Owen

, p. 2809 - 2814 (2007/10/06)

Conditions for the preparation of a series of base-free trialkylgallium compounds in benzene solvent by the exchange reaction of alkyllithium compounds and gallium chloride are described. Optimum conditions which favor formation of the trialkyl involve mixing a benzene solution of an appropriate alkyllithium compound and a benzene solution of gallium chloride in exactly a 3:1 molar ratio, heating of the reaction mixture for 12 hr at 70°, filtration to remove by-product lithium chloride, removal of solvent under vacuum, and vacuum distillation of the product: 3RLi + GaCl3 = 3LiCl + R3Ga, where R = C2H5, n-C3H7, n-C4H9, i-C4H9, s-C4H9, and t-C4H9. Alkylgallium dichlorides and dialkylgallium chlorides are produced when lithium alkyls and gallium chloride are allowed to react in a 1:1 and 2:1 molar ratio, respectively: nRLi + GaCl3 = nLiCl + RnGaCl3-n, where n = 1 and 2. Reaction of an alkyllithium compound and gallium chloride in a molar ratio in excess of 3:1 results in formation of the corresponding lithium tetraalkylgallate: 4n-C3H7Li + GaCl3 = 3LiCl + LiGa(n-C3H7)4. Trivinylgallium tetrahydrofuranate is produced by the reaction of vinyllithium and gallium chloride in 3:1 molar ratio in tetrahydrofuran solvent. Infrared, proton magnetic resonance, and mass spectra of RnGaCl3-n compounds where R = C2H5 to C4H9 isomers and n = 1-3 are reported and discussed. Proton magnetic resonance spectra reveal that the chemical shifts for protons on α-carbon atoms are sensitive to substitution on the gallium. An explanation for these chemical shift data along with molecular association data for RnGaCl3-n. compounds is given. Mass spectroscopy can be used as a convenient, diagnostic tool for the identification of organogallium compounds of this type. Ion abundance data for all compounds are presented and the fragmentation processes believed to give these ions are discussed.

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