Some comparisons of chemical beam epitaxy InGaAs/InP growth using triethylgallium, triisopropylgallium and Triisobutylgallium (cas 17150-84-4) sources

Add time:08/14/2019    Source:sciencedirect.com

The chemical beam epitaxy (CBE) growth of InGaAs lattice matched to InP has been compared using the three Ga precursors triethylgallium (TEG), Triisobutylgallium (cas 17150-84-4) (TIBG) and triisopropylgallium (TIPG) in conjunction with trimethylindium (TMI). All three Ga precursors exhibit similar behaviour, with the Ga content of the epilayers falling rapidly as the temperature moves outside a narrow growth window centred at 500°C. The Ga: In concentration ratio also depends on the group V: III flux ratios used during growth. No significant relaxation of the tight control of growth conditions required to grow lattice-matched InGaAs reproducibly is offered by TIPG or TIBG, in comparison to TEG.

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