Novel polymeric anionic photoacid generators (PAGs) and corresponding polymers for 193 nm lithography
A series of new anionic PAGs, as well as PAG-bound polymers designed for use in 193 nm photoresist materials, have been synthesized and characterized. These novel materials provide optical transparency at 193 nm and also good etch resistance. PAG incorpor
Fluorine-containing photoacid generator and preparation method and application thereof
The invention discloses a fluorine-containing photoacid generator, relates to the technical field of photosensitive resin synthesis and comprises a structural formula E. One or both of the compounds represented by formula F, or the fluorine-containing pho
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(2021/10/27)
Fluorine-contained photoacid generators (PAGs) and corresponding polymer resists
A new series of fluorinated anionic photoacid generators (PAGs) (F4-MBS-TPS, F4VBzBS-TPS, F4-IBBS-TPS, CF3 MBS-TPS, MTFBS-TPS and VBzTFBS-TPS), and corresponding PAG bound polymeric resists (HS-EA-PAG) based on hydroxystyrene (HOST) and 2-ethyl-2-adamanty
Wang, Mingxing,Yueh, Wang,Gonsalves, Kenneth E.
p. 607 - 612
(2008/12/22)
Novel anionic photoacid generators (PAGs) and corresponding PAG bound polymers for sub-50 nm EUV lithography
A new series of anionic photoacid generators (PAGs) and corresponding polymers were prepared. The thermostability of PAG bound polymers was superior to that of PAG blend polymers. PAG incorporated into the polymer main chain showed improved resolution when compared with the PAG blend polymers. This was demonstrated by extreme ultraviolet lithography (EUVL) results: the fluorine PAG bound polymer resist gave 45 nm (1: 1), 35 nm (1: 2), 30 nm (1: 3) and 20 nm (1: 4) Line/Space as well as the 50 nm (1: 1) elbow pattern. The Royal Society of Chemistry.
Wang, Mingxing,Gonsalves, Kenneth E.,Rabinovich, Monica,Yueh, Wang,Roberts, Jeanette M.
p. 1699 - 1706
(2008/02/04)
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