12014-85-6Relevant articles and documents
Thermal, electrical and magnetic properties of the ferromagnetic dense Kondo system CeSix
Sato, Nobuya,Mori, Hiroshi,Satoh, Takeo,Miura, Tsuneo,Takei, Humihiko
, p. 1384 - 1394 (1988)
Single crystals of the ferromagnetic dense Kondo system CeSix were grown, and the specific heat, the electrical resistivity and the magnetic susceptibility were measured. Electrical resistivity measurements clearly show the typical Kondo behavior, which unambiguously tells that CeSix is a ferromagnetic dense Kondo system. The appreciable anisotropy of the magnetic susceptibility is analyzed with the crystalline field effect and a conjecture is made that the ground doublet is a Γ7-like doublet.
Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation
Cheng,Tang,Liu
, p. 240 - 245 (2004)
Cerium-ion implantation was conducted to synthesize Ce-disilicide films on silicon wafers, using a metal vapor vacuum arc ion source. The continuous CeSi2 films were directly obtained at relatively low temperature with neither external heating nor post-annealing and the surface morphology varied with the variation of the implantation parameters. The formation mechanism of the CeSi2 phase is also discussed in terms of the temperature rise caused by ion beam heating and the ion dose in the far-from-equilibrium process of high current pulsed Ce-ion implantation.
Interaction of the components in the systems Ce-Ag-Si at 500 °c and Eu-Ag-Si at 400 °c
Belan,Bodak,Gladyshevskii,Soroka,Kuzhel,Protsyk,Stets
, p. 212 - 216 (2005)
Isothermal sections of the phase diagrams of the systems Ce-Ag-Si and Eu-Ag-Si were built at 500 and 400 °C, respectively. Three intermetallic compounds were found in the former system, two in the latter and their crystal structures and homogeneity region
Thermoelectric properties of the solid solutions based on ThSi2-type CeSi2 compound
Morozkin,Stupnikov,Nikiforov,Imaoka, Nobuyoshi,Morimoto, Isao
, p. 12 - 15 (2006)
Thermoelectric properties (from 240 up to 380 K) of the ThSi2-type CeSi2, Ce40Si27Ge32, Ce38Si48Ge13, Ce37Si28Ga35 and Y0.5
ELECTRONICALLY-DRIVEN VOLUME TRANSITION IN CeSi2 - xGax.
Mori,Sato,Satoh
, p. 955 - 958 (1984)
The pseudobinary compounds CeSi//2// minus //xGa//x were prepared, and the lattice parameters and the susceptibilities were measured. At the Si-rich end, 0 less than equivalent to x less than 0. 2, the system behaves as one with a high (approx. 200K) Kondo temperature exhibiting no magnetic order. For 0. 5 less than x less than equivalent to 1. 3, the system shows the unit-cell volume 3% larger and orders ferromagnetically around 10K. The alpha -ThSi//2 structure is retained up to x equals 1. 3, but one observes a two-phase region for 0. 2 less than equivalent to x less than equivalent to 0. 5, consisting of small- and large-volume phases.
Cerium-silicon system
Bulanova,Zheltov,Meleshevich,Saltykov,Effenberg
, p. 110 - 115 (2002)
The Ce-Si phase diagram was constructed by means of differential thermal, X-ray and metallography examination of 15 as-cast key alloys. Ce5Si3, Ce3Si2, Ce5Si4, CeSi were confirmed. Two ceri
Crystal instability in CeSix
Murashita, Y.,Sakurai, J.,Satoh, T.
, p. 789 - 792 (1991)
In samples of CeSix with x ≤ 2.00 having a tetragonal α-ThSi2 type crystal, an abnormal thermal contraction in addition to a crystal phase transition with a finite jump in lattice parameter c, keeping the same crystal structure, were observed. The instability of the crystal structure is discussed tentatively in term of its free energy.
MAGNETIC PROPERTIES OF RARE EARTH DISILICIDES RSi//2.
Pierre, J.,Siaud, E.,Frachon, D.
, p. 321 - 330 (1988)
The magnetic properties of the rare earth disilicides (RSi//2) have been re-investigated. We confirm the occurrence of ferromagnetism in PrSi//2 and antiferromagnetism in GdSi//2, TbSi//2 and HoSi//2. NdSi//2 orders at T//N equals 10 K and ErSi//2 orders
Auger effect in high-resolution Ce 3d-edge resonant photoemission
Cho, E.-J.,Jung, R.-J.,Choi, B. H.,Oh, S.-J.,Iwasaki, T.,et al.
, p. 1 - 6 (2008/10/08)
The bulk-sensitive Ce 4f spectral weights of various Ce compounds including CeFe2, CeNi2, and CeSi2 were obtained with the resonant photoemission technique at the Ce 3d edge. We found that the line shapes change significantly with the small change of the incident photon energy. Detailed analysis showed that this phenomenon results primarily from the Auger transition between different multiplet states of the Ce 3d5/24f2 (bar denotes a hole) electronic configuration in the intermediate state of the resonant process. This tells us that extra care should be taken for the choice of the resonant photon energy when extracting Ce 4f spectral weights from the Ce 3d-edge resonant photoemission spectra. The absorption energy corresponding to the lowest multiplet structure of the Ce 3d5/24f2 configuration seems to be the logical choice to obtain genuine Ce 4f spectral weight from the Ce 3d resonant photoemission data.
Characteristic temperature dependence of the 4f occupancy in the Kondo system CeSi2
Grazioli, C.,Hu, Z.,Knupfer, M.,Graw, G.,Behr, G.,et al.
, p. 1 - 5 (2008/10/08)
We present a Ce-L3 x-ray absorption spectroscopic study (XAS) of CeSi2 at different temperatures. The extracted Ce 4f occupancy shows a strong dependence upon temperature that qualitatively agrees with theoretical expectations based on the single-impurity Anderson model. We additionally discuss the reliability of L3 XAS performed on nearly trivalent rare-earth compounds in comparison with other high-energy spectroscopy techniques.
