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7440-45-1

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7440-45-1 Usage

General Description

CERAMICS-AEium is a chemical compound used in the production of ceramics. It is an aluminum oxide-based material that is known for its high strength, durability, and resistance to wear and corrosion. CERAMICS-AEium is commonly used as a ceramic coating for industrial applications, such as in the manufacturing of cutting tools, engine components, and wear-resistant parts. Its unique properties make it an ideal choice for harsh environments and high-temperature applications, where traditional metals or plastics may not be suitable. Additionally, CERAMICS-AEium has excellent electrical insulation properties, making it ideal for use in electronic and semiconductor applications.

Check Digit Verification of cas no

The CAS Registry Mumber 7440-45-1 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 7,4,4 and 0 respectively; the second part has 2 digits, 4 and 5 respectively.
Calculate Digit Verification of CAS Registry Number 7440-45:
(6*7)+(5*4)+(4*4)+(3*0)+(2*4)+(1*5)=91
91 % 10 = 1
So 7440-45-1 is a valid CAS Registry Number.
InChI:InChI=1/Ce

7440-45-1 Well-known Company Product Price

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  • (Code)Product description
  • CAS number
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  • Detail
  • Alfa Aesar

  • (45618)  Cerium sputtering target, 50.8mm dia x 1.59mm thick   

  • 7440-45-1

  • 1each

  • 6664.0CNY

  • Detail
  • Alfa Aesar

  • (45734)  Cerium sputtering target, 50.8mm dia x 3.18mm thick   

  • 7440-45-1

  • 1each

  • 7056.0CNY

  • Detail
  • Alfa Aesar

  • (46058)  Cerium sputtering target, 76.2mm dia x 1.59mm thick   

  • 7440-45-1

  • 1each

  • 9653.0CNY

  • Detail
  • Alfa Aesar

  • (45926)  Cerium sputtering target, 76.2mm dia x 3.18mm thick   

  • 7440-45-1

  • 1each

  • 10290.0CNY

  • Detail
  • Alfa Aesar

  • (10139)  Cerium foil, 1.0mm (0.04in) thick, 99.9% (REO)   

  • 7440-45-1

  • 25x25mm

  • 2571.0CNY

  • Detail
  • Alfa Aesar

  • (10139)  Cerium foil, 1.0mm (0.04in) thick, 99.9% (REO)   

  • 7440-45-1

  • 50x50mm

  • 7875.0CNY

  • Detail
  • Aldrich

  • (461210)  Cerium  chips

  • 7440-45-1

  • 461210-50G

  • 5,324.67CNY

  • Detail
  • Aldrich

  • (261041)  Cerium  ingot, under oil, 99.9% trace rare earth metals basis

  • 7440-45-1

  • 261041-25G

  • 5,324.67CNY

  • Detail
  • Aldrich

  • (261041)  Cerium  ingot, under oil, 99.9% trace rare earth metals basis

  • 7440-45-1

  • 261041-100G

  • 14,648.40CNY

  • Detail
  • Aldrich

  • (263001)  Cerium  powder, −40 mesh, 99.9% trace rare earth metals basis

  • 7440-45-1

  • 263001-10G

  • 3,486.60CNY

  • Detail

7440-45-1SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 16, 2017

Revision Date: Aug 16, 2017

1.Identification

1.1 GHS Product identifier

Product name cerium

1.2 Other means of identification

Product number -
Other names CERIUM,FOIL

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:7440-45-1 SDS

7440-45-1Synthetic route

cerium chloride
7790-86-5

cerium chloride

cerium
7440-45-1

cerium

Conditions
ConditionsYield
With calcium In neat (no solvent) start of react. at 700-800°C, raise of temp. during react. (about 600°C, in presence of an eutic mixture of KCl-LiCl3 less than 600°C);; metal-powder;;99%
With Ca In neat (no solvent) start of react. at 700-800°C, raise of temp. during react. (about 600°C, in presence of an eutic mixture of KCl-LiCl3 less than 600°C);; metal-powder;;99%
In melt Electrolysis; electrolysis of CeCl3 in KCl/LiCl, complete exclusion of O2;;97%
cerium(III) fluoride
7758-88-5

cerium(III) fluoride

cerium
7440-45-1

cerium

Conditions
ConditionsYield
With calcium In neat (no solvent) start of react. at 400°C, in presence of I2;; contaminations in wt.-%: 1-5 Ca, 0.1-1Mg, removal by distn. in vac.;;93%
With Ca In neat (no solvent) start of react. at 400°C, in presence of I2;; contaminations in wt.-%: 1-5 Ca, 0.1-1Mg, removal by distn. in vac.;;93%
With lithium In neat (no solvent) byproducts: LiF; in presence of I2; 78.17g CeF3, 9.6g Li, 20g subl. I2, under Ar, react. in a furnace of 1280°C, heating to 1100-1150°C after end of react. (40min); investigation of different vessel-materials;;50-95
cerium(IV) oxide

cerium(IV) oxide

cerium(III) fluoride
7758-88-5

cerium(III) fluoride

cerium
7440-45-1

cerium

Conditions
ConditionsYield
In melt Electrolysis; electrolyte: CeF3, BaF2, LiF; continuous addn. of CeO2, 850-900°C, 800-900A, 7-8V, current yield 96%; under He;;90%
In melt Electrolysis; bath composition (in wt.-%): 73 CeF3, 15 LiF, 12 BaF2; 11V, 249A, starting current density: 10.2A/cm**2 (cathode), 4.1A/cm**2 (anode);; purity 99.91-99.97%;;
In melt Electrolysis; bath composition (in mol-%): 21.9 CeF3, 73.1 LiF, 5.0 BaF2, 3-5 wt.-% CeO2, 760-850°C; description of different cells;;
cerium(III) oxide

cerium(III) oxide

cerium
7440-45-1

cerium

Conditions
ConditionsYield
With Hg; HCl; acetic acid In hydrogenchloride byproducts: H2; Electrochem. Process; soln. Ce2O3 in HCl; amalgamation on Hg cathode in buffer pH=3.4-3.7 (CH3COOH, CH3COONa); decomposed at 900-1250°C below 1E-6 Torr; various product yields (63.6-99.5%) for various conditions; amalgam rinsed (H2O, EtOH); degassed at 1000°C in vac.; elem. anal.;
cerium(IV) oxide

cerium(IV) oxide

magnesium
7439-95-4

magnesium

A

cerium(III) oxide

cerium(III) oxide

B

cerium
7440-45-1

cerium

Conditions
ConditionsYield
Products depend on amount of Mg. In H2 atmosphere also formation of Ce hydrides.;
cerium(II) sulfide

cerium(II) sulfide

nickel
7440-02-0

nickel

A

cerium
7440-45-1

cerium

B

nickel(II) sulfide

nickel(II) sulfide

Conditions
ConditionsYield
equilibrium at 1800°C;
equilibrium at 1800°C;
cerium(IV) oxide

cerium(IV) oxide

phosphorus

phosphorus

A

cerium
7440-45-1

cerium

B

phosphorus pentoxide
16752-60-6

phosphorus pentoxide

cerium(III) fluoride
7758-88-5

cerium(III) fluoride

aluminium
7429-90-5

aluminium

A

cerium
7440-45-1

cerium

B

aluminum(III) fluoride
7784-18-1

aluminum(III) fluoride

Conditions
ConditionsYield
In melt heating Al in a melt of CeF3 to 1000°C, react. stops when Al contents 1.5% Ce;;
cerium chloride
7790-86-5

cerium chloride

calcium
7440-70-2

calcium

A

cerium
7440-45-1

cerium

B

calcium chloride

calcium chloride

cerium(IV) oxide

cerium(IV) oxide

indium
7440-74-6

indium

A

indium(III) oxide

indium(III) oxide

B

cerium
7440-45-1

cerium

cerium(IV) oxide

cerium(IV) oxide

silicon
7440-21-3

silicon

A

cerium
7440-45-1

cerium

Conditions
ConditionsYield
In neat (no solvent) reaction at 1400-1550 °C and a pressure below 1E-2 Torr;;
In neat (no solvent) reaction at 1400-1550 °C and a pressure below 1E-2 Torr;;
cerium(IV) oxide

cerium(IV) oxide

cerium
7440-45-1

cerium

Conditions
ConditionsYield
With aluminium In neat (no solvent) reduction, booster: BaO2;;
With aluminium In neat (no solvent) byproducts: AlO; 1000-1500°C, 1E-4 Torr;;
With aluminium In neat (no solvent) reduction in presence of Fe and Si, large amounts of Si are necessary for good yields;;
cerium(IV) oxide

cerium(IV) oxide

pyrographite
7440-44-0

pyrographite

A

cerium
7440-45-1

cerium

B

carbon monoxide
201230-82-2

carbon monoxide

Conditions
ConditionsYield
0-1000°C; thermodynamic properties given;
(Ce((CH3)3CCOCHCOC(CH3)3)3)

(Ce((CH3)3CCOCHCOC(CH3)3)3)

A

cerium
7440-45-1

cerium

B

2,2,6,6-tetramethyl-3,5-heptadionato ion
122031-37-2

2,2,6,6-tetramethyl-3,5-heptadionato ion

Conditions
ConditionsYield
In gaseous matrix Irradiation (UV/VIS); photodissociation (248 nm) in a buffer gas (N2+CH4), heating of precursor; laser-induced fluorescence;
cerite (Ce,Ca,Y)2(Nb,Ta)2O6F

cerite (Ce,Ca,Y)2(Nb,Ta)2O6F

cerium
7440-45-1

cerium

Conditions
ConditionsYield
In neat (no solvent) reduction in O2/H2-blow-pipe;;
cerium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate)

cerium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate)

cerium
7440-45-1

cerium

Conditions
ConditionsYield
In neat (no solvent) Irradiation (UV/VIS); lanthanide compd. photodissociation by excimer laser irradiation at 248 nm; LIF detection;
cerium dihydride

cerium dihydride

cerium
7440-45-1

cerium

Conditions
ConditionsYield
In neat (no solvent) byproducts: H2; heating (vac., 5°C/min, 500-730°C); DTA monitoring;
cerium(II) sulfide

cerium(II) sulfide

A

cerium
7440-45-1

cerium

B

Ce3S4

Ce3S4

Conditions
ConditionsYield
dissocn. in vac. at 2100°C;
dissocn. in vac. at 2100°C;
cerium hydride

cerium hydride

A

cerium
7440-45-1

cerium

B

hydrogen
1333-74-0

hydrogen

Conditions
ConditionsYield
decompn. above 1080°C;
cerium(IV) oxide

cerium(IV) oxide

chromium(III) oxide

chromium(III) oxide

graphite

graphite

A

cerium
7440-45-1

cerium

B

chromium carbide

chromium carbide

Conditions
ConditionsYield
In neat (no solvent, solid phase) heating at 1050°C in tube furnace for 130 h, under H2; XRD;
cerium(III) nitrate hexahydrate

cerium(III) nitrate hexahydrate

cerium
7440-45-1

cerium

Conditions
ConditionsYield
With NaCl In water Electrochem. Process; deposited on Al alloy;
boron

boron

cerium
7440-45-1

cerium

cerium(III) bromide
14457-87-5

cerium(III) bromide

Ce4Br5B4

Ce4Br5B4

Conditions
ConditionsYield
In neat (no solvent) stoich. mixt. heating in sealed Ta capsule under Ar at 1420 K for 5 d;100%
In neat (no solvent) dry Ar-atmosphere; stoich. amts., sealed Ta-capsule, 1420 K, 5 d; quenching in cold water;
boron

boron

cerium
7440-45-1

cerium

cesium triiodide
7790-87-6

cesium triiodide

Ce4I5B4

Ce4I5B4

Conditions
ConditionsYield
In neat (no solvent) stoich. mixt. heating in sealed Ta capsule under Ar at 1340 K for 5 d;100%
In neat (no solvent) dry Ar-atmosphere; stoich. amts., sealed Ta-capsule, 1340 K, 5 d; quenching in cold water;
cerium
7440-45-1

cerium

phosphorus

phosphorus

cerium(III) bromide
14457-87-5

cerium(III) bromide

Ce3Br3P

Ce3Br3P

Conditions
ConditionsYield
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 900 °C for 5 days, Ta-tube in an evacuated silica ampoule;100%
cerium
7440-45-1

cerium

phosphorus

phosphorus

cesium triiodide
7790-87-6

cesium triiodide

Ce3I3P

Ce3I3P

Conditions
ConditionsYield
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1100 °C for 10 days, Ta-tube in an evacuated silica ampoule;100%
cerium
7440-45-1

cerium

pyrographite
7440-44-0

pyrographite

cerium(III) bromide
14457-87-5

cerium(III) bromide

3Ce(3+)*3Br(1-)*C2(6-)=Ce3Br3C2

3Ce(3+)*3Br(1-)*C2(6-)=Ce3Br3C2

Conditions
ConditionsYield
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1100 °C for 6 days, Ta-tube in an evacuated silica ampoule;100%
cerium
7440-45-1

cerium

germanium
7440-56-4

germanium

magnesium
7439-95-4

magnesium

Ce6Mg23Ge

Ce6Mg23Ge

Conditions
ConditionsYield
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere;100%
gallium
7440-55-3

gallium

cerium
7440-45-1

cerium

germanium
7440-56-4

germanium

Ce3Ga9Ge

Ce3Ga9Ge

Conditions
ConditionsYield
In melt mixing of Ce, Ga and Ge in ratio Ce:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;99%
cerium
7440-45-1

cerium

germanium
7440-56-4

germanium

Ce2Zn3Ge6

Ce2Zn3Ge6

Conditions
ConditionsYield
In neat (no solvent) mixt. Ce, Zn, and Ge was pressed into pellet, sealed in silica tube, andheated to 790°C over 8 h, held for 72 h, and cooled to room temp . over 8 h;99%
With In In melt mixt. Ce, Zn, Ge, and In in alumina tube in sealed in vacuo silica tube was heated to 1000°C over 12 h, held for 4 h, and ramped down to 850°C over 2 h, kept for 48 h and cooled to room temp. over 24 h; centrifugation, filtration, etching with acetic acid;30%
Conditions
ConditionsYield
In melt heating cerium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h invac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.;99%
cerium
7440-45-1

cerium

cerium(III) fluoride
7758-88-5

cerium(III) fluoride

sulfur
7704-34-9

sulfur

cerium(III) fluoride sulfide

cerium(III) fluoride sulfide

Conditions
ConditionsYield
In melt metal:metal fluoride:S molar ratio was 2:1:3, quartz crucible, Nb- or Ta-capsule, several days, 850 °C; equimolar amt. of NaCl was used as flux; NaCl was washed out with water;99%
cerium
7440-45-1

cerium

sodium azide

sodium azide

sulfur
7704-34-9

sulfur

cerium(III) bromide
14457-87-5

cerium(III) bromide

Ce6N3S4Br

Ce6N3S4Br

Conditions
ConditionsYield
With NaBr In neat (no solvent, solid phase) byproducts: NaBr; calcd. amts. of elements and compds. reacted in evacuated silica tube with excess NaBr as flux at 850°C for 7 d;99%
hydrogenchloride
7647-01-0

hydrogenchloride

cerium
7440-45-1

cerium

water
7732-18-5

water

([Ce(μ-Cl)(H2O)7](Cl)2)2

([Ce(μ-Cl)(H2O)7](Cl)2)2

Conditions
ConditionsYield
In hydrogenchloride Schlenk techniques; dissolution Ce in concd. aq. HCl (37%); XRD;99%
cerium
7440-45-1

cerium

water
7732-18-5

water

hydrogen bromide
10035-10-6, 12258-64-9

hydrogen bromide

[(H2O)7Ce(μ-Br)2Ce(OH2)7] bromide

[(H2O)7Ce(μ-Br)2Ce(OH2)7] bromide

Conditions
ConditionsYield
In hydrogen bromide aq. HBr; Schlenk techniques; dissolution Ce in concd. aq. HBr (48%); XRD;99%
cerium
7440-45-1

cerium

water
7732-18-5

water

hydrogen iodide
10034-85-2

hydrogen iodide

[Ce(water)9](I)3

[Ce(water)9](I)3

Conditions
ConditionsYield
In hydrogen bromide aq. HBr; Schlenk techniques; dissolution Ce in concd. aq. HI (55%); XRD;99%
tetrahydrofuran
109-99-9

tetrahydrofuran

cerium
7440-45-1

cerium

cyclopenta-1,3-diene
542-92-7

cyclopenta-1,3-diene

tricyclopentadienyl cerium * THF

tricyclopentadienyl cerium * THF

Conditions
ConditionsYield
With Hg(C6F5)2 In tetrahydrofuran byproducts: Hg, C6F5H; for 9 h at room temp.; allowed to settle, decanted, concd. (vac.), supernatant soln. removed, crystals dried (vac.);98%
cerium
7440-45-1

cerium

magnesium
7439-95-4

magnesium

silicon
7440-21-3

silicon

Ce6Mg23Si

Ce6Mg23Si

Conditions
ConditionsYield
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere;98%
cerium
7440-45-1

cerium

phosphorus

phosphorus

magnesium
7439-95-4

magnesium

Ce6Mg23P

Ce6Mg23P

Conditions
ConditionsYield
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere;98%
cerium
7440-45-1

cerium

Graphite

Graphite

magnesium
7439-95-4

magnesium

Ce6Mg23C

Ce6Mg23C

Conditions
ConditionsYield
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere;96%
arsenic

arsenic

cerium
7440-45-1

cerium

magnesium
7439-95-4

magnesium

Ce6Mg23As

Ce6Mg23As

Conditions
ConditionsYield
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere;95%
cerium
7440-45-1

cerium

1,3,5,7-cycloocatetraene

1,3,5,7-cycloocatetraene

CeI(η8-cyclooctatetraenyl)(thf)3
126075-46-5

CeI(η8-cyclooctatetraenyl)(thf)3

Conditions
ConditionsYield
With I2; tetrahydrofurane In tetrahydrofuran Ar; 50°C; 3 days;; filtered hot; elem. anal.;;94%
cerium
7440-45-1

cerium

water
7732-18-5

water

aluminium
7429-90-5

aluminium

hydrogen
1333-74-0

hydrogen

Conditions
ConditionsYield
In water Kinetics; powder of Al and 13 wt% Ce was ball milled with EtOH under Ar for 12 h, mixt. was placed in water bath to keep temperature constant at 70°C, then water at 70°C was added into reactor and reaction was carried out for 1 h;93.15%
With KCl In water Kinetics; powder of Al and 5 wt% Ce and 10 wt% KCl was ball milled with EtOH underAr for 8 h, mixt. was placed in water bath to keep temperature constant at 70°C, then water at 70°C was added into reactor and re action was carried out for 1 h;93.86%
With NaCl In water Kinetics; powder of Al and 5 wt% Ce and 10 wt% NaCl was ball milled with EtOH under Ar for 8 h, mixt. was placed in water bath to keep temperature constant at 70°C, then water at 70°C was added into reactor and reaction was carried out for 1 h;92.5%
cerium
7440-45-1

cerium

ethyl iodide
75-03-6

ethyl iodide

Conditions
ConditionsYield
With THF In tetrahydrofuran under Ar or N2, Schlenk line; EtI added to Ce metal chips in THF, suspn. refluxed for 24 h; vol. of THF reduced in vacuo, ppt. filtered off, dried, extd. with THF under N2 for 5 d, ext. concd., cooled, ppt. filtered and dried in vacuo;93%
1,2,3-Benzotriazole
95-14-7

1,2,3-Benzotriazole

cerium
7440-45-1

cerium

1.infin.[Ce(benzotriazolato)3(1H-benzotriazole)]

1.infin.[Ce(benzotriazolato)3(1H-benzotriazole)]

Conditions
ConditionsYield
With Hg In neat (no solvent) under Ar, Schlenk or ampoule techniques; metal and ligand (1:3) activated with Hg heated to 100°C in 5 h and to 140°C in 80 h, stored at 140°C for 48 h; cooled to 90°C in 150 h and to room temp. in 14 h, elem. anal.;91%
1H-imidazole
288-32-4

1H-imidazole

cerium
7440-45-1

cerium

strontium

strontium

Sr(2+)*2C3H3N2(1-)*2C3H4N2 = [Sr(C3H3N2)2(C3H4N2)2]#dotCe(3+)

Sr(2+)*2C3H3N2(1-)*2C3H4N2 = [Sr(C3H3N2)2(C3H4N2)2]#dotCe(3+)

Conditions
ConditionsYield
In neat (no solvent) byproducts: H2; under N2; Sr (0.9 mmol) and Ce (0.1 mmol) ground; ground with imidazole (3 mmol); sealed in evacuated ampole; heated (180°C, 96 h); cooled to room temp. (18 h); inidazole evapd. in vac.; elem. anal.;91%
samarium(III) oxide

samarium(III) oxide

cerium
7440-45-1

cerium

A

cerium(III) oxide

cerium(III) oxide

B

samarium
7440-19-9

samarium

Conditions
ConditionsYield
vapor pressure of Sm between 1217 and 1473°K given as equation; optimal conditions: 1200°C, 1E-3 Torr;A n/a
B 90%
in vac.;
cerium
7440-45-1

cerium

germanium
7440-56-4

germanium

aluminium
7429-90-5

aluminium

CeAuAl4(Au0.4Ge0.6)2

CeAuAl4(Au0.4Ge0.6)2

Conditions
ConditionsYield
In melt (N2); combining of Ce, Au, Al (excess) and Ge in Al2O3 crucible; sealingin vac. in SiO2 tube; heating to 1000°C for 12 h; keeping at thi s temp. for 5 h; cooling to 850°C for 24 h; slow cooling to 50°C for 72 h; soaking of crucible in aq. 5 M NaOH soln. overnight; rinsing with water and acetone;90%
cerium
7440-45-1

cerium

antimony
7440-36-0

antimony

cerium chloride
7790-86-5

cerium chloride

Ce9Sb16Cl3

Ce9Sb16Cl3

Conditions
ConditionsYield
In neat (no solvent) stoich. mixt. arc-sealed in a Ta tube under Ar, Ta tube placed in SiO2 glass tube, sealed, heated at 950°C for 18 d;90%

7440-45-1Relevant articles and documents

Study of the effect of cerium nitrate on AA2024-T3 by means of electrochemical micro-cell technique

Paussa,Andreatta,Rosero Navarro,Durán,Fedrizzi

, p. 25 - 33 (2012)

This work evaluates the effect of cerium nitrate as corrosion inhibitor for AA2024-T3 in the view of its introduction in sol-gel coatings able to provide self-healing ability. Since it is well established that deposition of Ce species is activated by the local pH increase, the objective of this paper is to investigate the behavior of AA2024-T3 (open circuit potential and polarization curves) in the presence of Ce species in aggressive solutions by means of a local technique, the electrochemical micro-cell. This technique enables the investigation of small areas with resolution in the micrometer range by the use of glass capillaries to define the working electrode area. The micro-cell results clearly displayed that the entire AA2024-T3 area exposed to the cerium-containing electrolyte was involved in the cerium precipitation mechanism. The heterogeneous electrochemical behavior of the microstructure is minimized by the formation of a cerium-containing layer able to protect the metal substrate.

Cerium deposition on aluminum alloy 2024-T3 in acidic NaCl solutions

Kolics,Besing,Baradlai,Wieckowski

, p. B512-B516 (2003)

We analyzed the interaction of cerium ions with surface intermetallics on Al 2024-T3 in NaCl media under open circuit conditions at pH 3 using scanning electron microscopic, Auger-electron spectroscopic (AES), and energy dispersive X-ray techniques (EDX), as well as electrochemistry. The results indicate that cerium deposition in a pH 3.0 NaCl solution is strongly surface-site specific. The cerium deposition was the highest on the S-phase particles, lower on the (Cu, Fe, Mn)Al6 sites, and minimal on the bulk matrix. In addition to the formation of a cerium-rich film on the intermetallics, we found that cerium incorporated into the porous structure of the dealloyed S-phase particles (Cu-Mg-Al intermetallics). Our analyses show that cerium does not prevent the dealloying of the intermetallic particles; in fact, the dealloying is necessary for local cerium deposition. AES and EDX data also revealed significant chloride enrichment on the cerium-rich sites. From our electrochemical measurements we conclude that the cerium-rich layer formed in acidic solution at short exposure times does not inhibit cathodic reaction on the intermetallics.

Mechanism of coke formation caused by catalytic nanochromium carbide particles from decomposition of CeCrO3

Li, Hao,Cui, Xinwei,Chen, Weixing

, p. 2578 - 2584 (2011)

Ce or CeO2 is often added to Fe-Cr-Ni base alloys to enhance protective Cr2O3 ceramic scale formation. In high-temperature carbonaceous reducing environments, however, it is still unsolved that Ce-containing alloys often exhibited increased carburization and coke formation. This research is aimed at understanding the mechanism of Ce-enhanced coke formation. It was found that CeO2 can cause catalytic activation of chromium carbide for carbon growth by first forming CeCrO3 and then decomposing CeCrO3 into CeO2 and active nanosize chromium carbide particles; the latter has proven to be conducive to coke formation. These findings can be helpful for the design of alloys with better ceramic coating resistant to carbonaceous degradation and for the growth of graphitic nanostructures using Cr-related catalysts.

Preparation of lanthanum and cerium metals by hydrometallurgy

Hasegawa,Sano,Aoshima,Shiokawa

, p. 246 - 249 (2008/10/08)

Lanthanum and cerium metals were prepared by electrolytic synthesis of amalgams in aqueous solutions followed by the thermal decomposition. The amalgamation yields were almost quantitative. The preparation yield of lanthanide metals, however, deteriorated during thermal decomposition due to a density difference between lanthanide and mercury. The gaseous impurities in the prepared metals were found to be comparable with those in commercially available ones.

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