Page 9 of 10
Journal of Materials Chemistry
16 Y. Didane, R. Ponce Ortiz, J. Zhang, K. Aosawa, T. Tanisawa, H.
Aboubakr, F. Fages, J. Ackermann, N. Yoshimoto, H. Brisset, C.
VidelotꢀAckermann, Tetrahedron, 2012, 68, 4664.
17 Y.Didane, P. Marsal, F. Fages, A. Kumagai, N. Yoshimoto, H.
Brisset, C. VidelotꢀAckermann, Thin Solid Films, 2010, 519, 578.
18 A. Facchetti, M.H. Yoon, C.L. Stern, H.E. Katz, T.J. Marks, Angew.
Chem., Int. Ed., 2003, 42, 3900.
19 M.H. Yoon, A. Facchetti, C.L. Stern, T.J. Marks, J. Am. Chem. Soc.,
2006, 128, 5792.
20 S. Ando, J. Nishida, H. Tada, Y. Inoue, S. Tokito, Y. Yamashita, J.
Am. Chem. Soc., 2005, 127, 5336.
characteristics were obtained with a HewlettꢀPackard 4140B
picoꢀamperemeterꢀDC voltage source at room temperature in air
The sourceꢀdrain current (ID) in the saturation regime is governed
by the following equation:
5
(ID)sat = (W/2L) Ciꢀ (VGꢀVt)2
(1)
where Ci is the capacitance per unit area of the gate insulator
layer, VG is the gate voltage, Vt is the threshold voltage, and ꢁ is
the fieldꢀeffect mobility.
21 T.M. Pappenfus, R.J. Chesterfield, C.D. Frisbie, K.R. Mann, J.
Casado, J.D. Raff, L.L. Miller, J. Am. Chem. Soc., 2002, 124, 4184.
22 R.J. Chesterfield, C.R. Newman, T.M. Pappenfus, P.C. Ewbank,
M.H. Haukaas, K.R. Mann, L.L. Miller, C.D. Frisbie, Adv. Mater.,
2003, 15, 1278.
Notes and references
a
10 Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), CNRS
UMR 7325, Aix Marseille Université, 13288 Marseille cedex 09, France.
Phone +33.6.17.24.81.93, Fax. +33.4.91.41.89.16, Eꢁmail: jeanꢁ
manuel.raimundo@univꢁamu.fr.
23 Y. Didane, A. Kumagai, N. Yoshimoto, C. VidelotꢀAckermann, H.
Brisset, Tetrahedron, 2011, 67, 1628.
b
Department of Chemistry, University of Hull, Hull, HU6 7RX, UK,
15 Phone +44(0)1482 465590 ; Fax +44 (0)1482 466410
, Eꢁmail:
24 a)Y. Shimizu, K. Oikawa, K. Nakayama, D. Guillon, J. Mater.
Chem.,2007, 17, 4223. b) M. Funahashi, H. Shimura, M. Yoshio, T.
Kato, Struct. Bonding, 2008, 128, 151. c) S. Sergeyev, W. Pisula, Y.
H.Geerts, Chem. Soc. Rev., 2007, 36, 1902. d) M. Funahashi, Polym.
J.2009, 41, 459. e) N. Boden, R. J. Bushby, J. Clements, M. V.
Jesudason, P. F. Knowles, G. Williams, Chem. Phys. Lett., 1988, 152,
94. f) T. Yasuda, H. Ooi, J. Morita, Y. Akama, K. Minoura, M.
Funahashi, T. Shimomura, T. Kato, Adv. Funct. Mater., 2009, 19,
411. g) A. M. van de Craats, J. M. Warman, A. Fechtenkötter, J. D.
Brand, M. A. Harbison, K. Müllen, Adv. Mater., 1999, 11, 1469. h)
W. Pisula, A. Menon, M. Stepputat, I. Lieberwirth, U. Kolb, A.
Tracz, H. Sirringhaus, T. Pakula, K. Müllen, Adv. Mater., 2005, 17,
684. i) M. Funahashi, J. Hanna, Appl. Phys. Lett., 2000, 76, 2574. j)
M. Funahashi, J. Hanna, Adv. Mater., 2005, 17, 594. k) M.
Funahashi, F. Zhang, N. Tamaoki, J. Hanna, ChemPhysChem, 2008,
9, 1465. l) A. Matsui, M. Funahashi, T. Tsuji, T. Kato, Chem. Eur. J.,
2010, 16, 13465.
c Laboratoire MAPIEM (EA 4323),Université du SUD ToulonꢁVar, ISITV,
BP 56, 83162 La Valette du Var cedex, France. Phone
+33.4.94.14.67.24, Fax. +33.4.94.14.27.86, Eꢁmail: brisset@univꢁtln.fr.
20 Electronic Supplementary Information (ESI) available: Figure S1, TGA
and degradation temperatures of LCꢁdiketones 1 and 2 ; Figure S2, DSC
of LCꢁdiketones 1 and 2; Figure S3, OPM of LCꢁdiketone 1, Figure S4,
Optical microscopy images of a LCꢁdiketone 2 thin films, Figure S5, AFM
pictures and corresponding crossꢁsection of LCꢁdiketones 1 and 2.
25 Figure S6, Optical microscopy images of thin films deposited by drop
casting in BGBC configuration of LCꢁdiketone 2, Figure S7, 1H NMR
spectra of LCꢁdiketones 1 and 2 See DOI: 10.1039/b000000x/
1
2
3
4
A.R. Murphy, J.M.J. Fréchet, Chem. Rev., 2007, 107, 1066.
A. Facchetti, Mater. Today, 2007, 10, 28.
A. Mishra, C.ꢀQ. Ma, P. Bäuerle, Chem. Rev., 2009, 109, 1141.
C. VidelotꢀAckermann, J. Ackermann, H. Brisset, K. Kawamura, N.
Yoshimoto, P. Raynal, A. El Kassmi, F. Fages, J. Am. Chem. Soc.,
2005, 127, 16346.
5
6
C. VidelotꢀAckermann, J. Ackermann, K. Kawamura, N. Yoshimoto,
H. Brisset, P. Raynal, A. El Kassmi, F. Fages, Org. Electron., 2006,
7, 465.
C.E. Mauldin, K. Puntambekar, A.R. Murphy, F. Liao, V.
Subramanian, J.M.J. Fréchet, D.M. DeLongchamp, D.A. Fischer,
M.F. Toney, Chem. Mater., 2009, 21, 1927.
25 a) M. Nuita, J. Sakuda, Y. Hirai, M. Funahashi, T. Kato, Chem. Let.,
2012, 40, 412. b) A.J.J.M. van Breemen, P.T. Herwig, C.H.T. Chlon,
J. Sweelssen, H.F.M. Schoo, S. Setayesh, W.M. Hardeman, C.A.
Martin, D.M. de Leeuw, J.J.P. Valeton, C.W.M. Bastiaansen, D.J.
Broer, A.R. PopaꢀMerticaru, S.C.J. Meskers, J. Am. Chem. Soc.,
2006, 128, 2336. c) M. Funahashi, N. Tamaoki, ChemPhysChem,
2006, 7, 1193. d) M. Funahashi, N. Tamaoki, Chem. Mater., 2007,
19, 608. e) K.L. Woon, M.P. Aldred, P. Vlachos, G.H. Mehl, T.
Stirner, S.M. Kelly, M. O’Neill, Chem. Mater., 2006, 18, 2311.
7
8
9
P. Liu, Y. Wu, H. Pan, Y. Li, S. Gardner, B.S. Ong, S. Zhu, Chem.
Mater., 2009, 21, 2727.
Y. Didane, G.H. Mehl, A. Kumagai, N. Yoshimoto, C. Videlotꢀ
Ackermann, H. Brisset, J. Am. Chem. Soc., 2008, 130, 17681.
Y. Didane, C. Martini, M. Barret, S. Sanaur, P. Collot, J. Ackermann,
F. Fages, H. Brisset, C. VidelotꢀAckermann, Thin Solid Films, 2010,
518, 5311.
26 M. Funahashi, F. Zhang, N. Tamaoki, Adv. Mater., 2007, 19, 353.
27 J.A. Letizia, S. Cronin, R. Ponce Ortiz, A. Facchetti, M.A. Ratner,
T.J. Marks, Chem. Eur. J., 2010, 16, 1911.
28 Y. Shirai, A.J. Osgood, Y. Zhao, Y. Yao, L. Saudan, H. Yang, C. Yuꢀ
Hung, L.B. Alemany, T. Sasaki, J.ꢀF. Morin, J.M. Guerrero, K.F.
Kelly, J.M. Tour, J. Am. Chem. Soc., 2006, 128, 4854.
29 J. Roncali, Acc. Chem. Res., 2000, 33, 147.
30 K.ꢀC. Li, Y.ꢀC. Hsu, J.ꢀT. Lin, C.ꢀC. Yang, K.ꢀH. Wei, H.ꢀC. Lin, J.
Poly. Sci., Part A: Poly. Chem., 2009, 47, 2073.
31 W.ꢀC. Yen, B. Pal, J.ꢀS. Yang, Y.ꢀC. Hung, S.ꢀT. Lin, C.ꢀY. Chao,
W.ꢀF. Su, J. Poly. Sci., Part A: Poly. Chem., 2009, 47, 5044.
32 R. Rieger, V. Enkelmann, K. Müllen, Materials, 2010, 3, 1904.
33 M.ꢀH. Yoon, S.A. DiBenedetto, A. Facchetti, T.J. Marks, J. Am.
Chem. Soc., 2005, 127, 1348.
10 Y. Didane, A.K. Diallo, T. Fiorido, A. Suzuki, N. Yoshimoto, S.
Bernardini, J. Ackermann, F. Fages, H. Brisset, M. Bendahan, K.
Aguir, C. VidelotꢀAckermann, J. Optoelectron. Adv. Mater., 2010,
12, 1546.
11 T. Fiorido, M. Bendahan, K. Aguir, S. Bernardini, C. Martini, H.
Brisset, F. Fages, C. VidelotꢀAckermann, J. Ackermann, Sensors and
Actuators B: Chemical, 2010, 151, 77.
12 T. Fiorido, S. Bernardini, M. Bendahan, K. Aguir, H. Brisset, C.
VidelotꢀAckermann, J. Ackermann, Procedia Engineering, 2011, 25,
1069.
13 J. Mawyin, I. Shupyk, M. Wang, G. Poize, P. Atienzar, T. Ishwara,
J.R. Durrant, J. Nelson, D. Kanehira, N. Yoshimoto, C. Martini, E.
Shilova, P. Secondo, H. Brisset, F. Fages, J. Ackermann, J. Phys.
Chem. C, 2011, 115, 10881.
34 A. Facchetti, M. Mushrush, H.E. Katz, T.J. Marks, Adv. Mater.,
2003, 15, 33.
14 C. VidelotꢀAckermann, H. Brisset, J. Zhang, J. Ackermann, S.
Nénon, F. Fages, P. Marsal, T. Tanisawa, N. Yoshimoto, J. Phys.
Chem. C, 2009, 113, 1567.
15 R. Ponce Ortiz, H. Brisset, C. VidelotꢀAckermann, Synth. Met., 2012,
162, 857.
35 M. J. Frisch, G. W. Trucks, H. B. Schlegel, G. E. Scuseria, M. A.
Rob, J. R. Cheeseman, J. A. Montgomery Jr., T. Vreven, K. N.
Kudin, J. C. Burant, J. M. Millam, S. S. Iyengar, J. Tomasi, V.
Barone, B. Mennucci, M. Cossi, G. Scalmani, N. Rega, G. A.
Petersson, H. Nakatsuji, M. Hada, M. Ehara, K. Toyota, R. Fukuda, J.
This journal is © The Royal Society of Chemistry [year]
Journal Name, [year], [vol], 00–00 | 9