Journal of the American Chemical Society
Communication
Table 4. Reaction of O(Bpin)2 with Et3SiH in the Presence
of Mo(CO)5(THF) or Mo(CO)5(NEt3)
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L =
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yield (%)
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THF
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NEt3
NEt3
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25 °C, 10 h
50 °C, 10 h
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b
1
mL of toluene. Yield based upon H NMR.
but also for promotion of the catalytic cycle shown in Scheme
3, although the details are currently unclear.
The reaction of O(Bpin)2 with Et3GeH in place of Et3SiH
was examined under conditions similar to those in entry 1 in
Table 3; the corresponding boryl germyl ether, pinB−O−GeEt3
(13), was found to form in 93% yield (Scheme 4). This shows
that our catalytic reaction system is also available to perform
selective B−O−Ge bond-forming reactions.
Scheme 4. Reaction of O(Bpin)2 with Et3GeH in the
Presence of Mo(CO)6
In conclusion, we have established an unprecedented
selective B−O−Si bond-forming reaction of bisboryloxide or
boroxine with hydrosilane catalyzed by a transition-metal
carbonyl complex; Mo(CO)6 has especially high catalytic
activity. This work provides a new direction in the expansion of
materials chemistry, particularly for B−O−Si-containing
products, which is a great step toward the development of
functional inorganic materials.
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ASSOCIATED CONTENT
* Supporting Information
Detailed experimental procedures and characterization of
products. This material is available free of charge via the
(10) Matthews, S. L.; Pons, V.; Heinekey, D. M. Inorg. Chem. 2006,
45, 6453−6459.
■
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(12) Stosur, M.; Kochel, A.; Keller, A.; Szymanska-Buzar, T.
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AUTHOR INFORMATION
Corresponding Author
■
(13) Wieland, S.; van Eldik, R. Organometallics 1991, 10, 3110−3114.
(14) McDonald, F. E.; Schultz, C. C. J. Am. Chem. Soc. 1994, 116,
9363−9364.
Notes
The authors declare no competing financial interest.
ACKNOWLEDGMENTS
■
This work was supported by a Challenging Exploratory
Research Grant (No. 25620048) and by a Grant-in-Aid for
Science Research Japan (C) (No. 25410073) from the Ministry
of Education, Culture, Sports, Science and Technology, Japan
and a grant from the Kato Foundation for the Promotion of
Science.
D
dx.doi.org/10.1021/ja500465x | J. Am. Chem. Soc. XXXX, XXX, XXX−XXX