PHASE COMPOSITION AND MICROSTRUCTURE
1049
‡ = 1.074–1.077 nm [7, 10], and that of silicon, ‡ =
REFERENCES
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mation of a coherent interface between the deposited
islands and the substrate accounts for the corrugated
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microstructure was reported by Sysoev et al. [12] for
thin Ga2SÂ3 layers on GaAs; the lattice parameters of
these compounds are in the ratio 2 : 1.
Roquesite, CuInS2, has the chalcopyrite structure
with tetragonal cell parameters ‡ = 0.5523 nm and Ò =
1.1141 nm [7]. In comparison with indium sulfide, this
compound is less likely to have a coherent interface
with silicon. Note that the ‡ parameter of CuInS2 is
essentially identical to that of silicon, while their Ò
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CONCLUSIONS
The present results lead us to conclude that the
microstructure of pyrolytic sulfide layers and the struc-
ture of the layer–substrate interface depend on the crys-
tal chemistry of the substrate and the deposition tem-
perature. The orienting effect of the substrate can be
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The other mechanism is selective attachment of parti-
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ence of impurity phases impedes ordered sulfide
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the sulfide–Si interface.
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ACKNOWLEDGMENTS
We are grateful to Dr. A.Yu. Zavrazhnov for many
valuable discussions.
INORGANIC MATERIALS Vol. 43 No. 10 2007