13510-35-5

Usage

Uses

1. Used in Chemical Synthesis:
Indium(III) Iodide is used as a reagent for the preparation of vinyl and methyl indates. These indates undergo regioselective reactions with cinnamyl bromide, which is crucial in the synthesis of various organic compounds.
2. Used in Chemical Research:
Indium(III) Iodide is also utilized in chemical research for studying its properties and potential applications in different fields. Its unique chemical characteristics make it an interesting subject for research and development.
3. Used in Pharmaceutical Industry:
Although not explicitly mentioned in the provided materials, Indium(III) Iodide has been known to be used in the pharmaceutical industry for the synthesis of various drugs and pharmaceutical compounds.
4. Used in Electronics Industry:
Indium(III) Iodide can also be used in the electronics industry, particularly in the development of semiconductor materials and other electronic components, due to its unique electronic properties.

InChI:InChI=1/3HI.In/h3*1H;/q;;;+3/p-3

Upstream product

• 7440-74-6 indium 
• 7553-56-2 iodine 
• 22398-80-7 indium(III) phosphide 
• 29790-99-6 InI₂⁽¹⁺⁾ 
• 7681-82-5 sodium iodide 
• 75-11-6 diiodomethane 
• 603-35-0 triphenylphosphine 

Downstream Products

• 7553-56-2 iodine 
• 37231-03-1 indium sulfide 
• 22398-80-7 indium(III) phosphide 
• 10025-82-8 indium(III) chloride 
• 12030-05-6 indium(III) nitride 
• 7440-74-6 indium 
• 38427-21-3 cis-iodo-diphenylphosphine-tetracarbonyl-rhenium 
• 134109-96-9 {InI₂Mes}(n) 
• 86638-49-5 InI₃(o-(benzylideneamino)phenol)2 
• 86638-42-8 InI₃((C₆H₅)CHN(C₆H₅))2 
• 86638-43-9 InI₃((C₆H₄(OH))CHN(C₆H₅))2 
• 86638-47-3 InI₃((C₆H₄(OH))CHN(C₆H₄-p-NO₂)) 
• 86638-52-0 InI₃((C₁₀H₆(OH))CHN(C₆H₅))2 
• 349545-09-1 Dipp₂nacnacInI₂ 

Relevant academic research and scientific papers

Phase composition and microstructure of In3S4 and CuInS2 films grown on silicon by spray pyrolysis

We describe the microstructure and phase composition of In 3S4 and CuInS2 films grown on silicon by spray pyrolysis using aerosols of thiourea complexes and examine the effects of the deposition temperature and the nature

On thermodynamic characteristics of In-I system compounds thermodynamische daten von indiumiodid

The temperature dependences of the total vapour pressure for solid and liquid InI2 and liquid InI3 were measured by the static method with a membran-gauge manometer. The heat capacities above phases and solid InI3 were also obtained. The partial pressures In2I3, InI3, InI, In2I4, I2, I were calculated. Absolute entropies and enthalpies of formation InI2 (crII), InI2 (1), In2I4 (g), InI3 (1), InI3 (g), In2I6 (g) were obtained. We used the least square method to obtain the mutual consistent sets of data on thermodynamic characteristics of indium iodides in condensed and gaseous phases. The result of this work is the set of standard formation enthalpies and absolute entropies of the In-I system compounds.

Indium(III) compounds containing the neopentyl substituent, In(CH2CMe3)3, In(CH2CMe3)2Cl, In(CH2CMe3)Cl2, and In(CH2CMe3)2CH3. Crystal and molecular structure of dichloroneopentylindium(III), an inorganic polymer

The neopentylindium(III) derivatives In(CH2CMe3)3, In(CH2CMe3)2Cl, In(CH2CMe3)Cl2, and In(CH2CMe3)2Me have been prepared and characterized by elemental analyses, cryoscopic molecular weight studies in benzene, IR and 1H NMR spectroscopic data, and Lewis acidity studies. Molecular weight studies suggest that In(CH2CMe3)3 and In(CH2CMe3)2Me are monomeric molecules whereas In(CH2CMe3)2Cl is dimeric in benzene solution. The dichloro derivative In(CH2CMe3)Cl2, which has insufficient solubility in benzene for molecular weight studies, crystallizes in the acentric space group P212121 with a = 6.717 (4) ?, b = 12.217 (4) ?, c = 22.658 (7) ?, V = 1859 ?3, and Z = 8 (formula units). Diffraction data (Mo Kα, 2θ = 2-50°) were collected with a Enraf-Nonius CAD-4/θ-2θ diffractometer. Full-matrix least-squares refinement led to a final R value of 9.062 for 1584 observed [Fo ≥ 5σ(Fo)] reflections. Dichloroneopentylindium(III) is a one-dimensional polymer with no short contacts between strands. Each indium has distorted trigonal-bipyramidal geometry.

Spontaneous growth of uniformly distributed in nanodots and InI3 nanowires on InP induced by a focused ion beam

We show the growth of hemispherical In nanodots due to differential sputtering by 30 keV gallium (Ga+) ions and of InI3 nanodots and nanowires due to chemical reactions with iodine on the surface of focused ion beam-irradiated areas on a (100)InP substrate. Growth occurs exclusively on previously FIB-fabricated nucleation-sites in the form of craters and trenches. Surface topography and the native oxide on InP are identified as the factors determining the area of growth. Arbitrary 2D patterns can be generated with good control of localization and dimension of the nanostructures. Limitations of size and surface density of the nanodots and nanowires are discussed.

Indium nitride from indium iodide at low temperatures: Synthesis and their optical properties

In this paper, we present an effective synthetic protocol to produce high quality InN nanocrystals using indium iodide (InI3), one member of the family of indium halides, as the indium source at a low temperature of 3), with a stronger covalent ability, can also prevent the In3+ from being reduced to elemental indium, and then InN is formed. This synthetic protocol not only provides an alternative method to successfully synthesize high-quality InN, but is also useful to fabricate other functional materials by using stronger covalent reactants to prevent reduction/oxidation in the oxidation/reduction reaction process, respectively. Furthermore, we also report the first example of an orientation-attachment process occurring between the metal nitride particles. The high purity of the InN nanoparticles can be seen from the XPS and HRTEM results, showing the as-obtained products possess no obvious iodine or amorphous layers on the surface of particles, respectively. By controlling the parameters of reaction temperature and time, nanoparticles with different sizes were obtained as the final products. Raman and IR results indicate that our experimental data were consistent with the theoretical prediction and this gives further evidence that high quality InN nanocrystals were obtained. Moreover, it has been shown that the near-infrared band around 0.7 eV is characteristic of these samples and there were no obvious peaks around 1.9 eV, indicating that these InN nanocrystals exhibit a band gap of 0.7 eV, rather than the previously accepted 1.9 eV. The Royal Society of Chemistry and the Centre National de la Recherche Scientifique 2005.

Indium triiodide catalysed one-step conversion of tetrahydropyranyl ethers to acetates with high selectivity

Chemoselective one-step conversion of tetrahydropyranyl ethers of primary alcohols to corresponding acetates was carried out. The reaction occurred through an indium triiodide catalyzed transesterification process in ethyl acetate. The method provided advantages such as operational simplicity, acceptable reaction conditions to acid-sensitive functional groups and good yield.

Highly selective acylation of alcohols and amines by an indium triiodide-catalysed transesterification process

A very simple method has been developed for the acylation of alcohols and amines by ethyl acetate through an indium triiodide-catalysed transesterification process. Using this method acylation of a primary OH group in the presence of secondary and phenolic OH groups, and of a primary NH2 in the presence of secondary NH and primary OH have been achieved with high selectivity. The Royal Society of Chemistry 2000.

Synthetic, Spectroscopic and X-Ray Crystallographic Studies on Complexes formed between Indium(III) Iodide and Phosphine Ligands

The 1:1 adducts of InI3 with various phosphine ligands i3, HPh2, HBut2 or H(C6H11)2 (C6H11 = cyclohexyl)> have been prepared and characterised, and their solution properties, as examined by (1)H, (31)P and (115)In NMR an

Direct electrochemical synthesis of X2InCH2X compounds (X = Br, I) and a study of their coordination chemistry

The electrochemical oxidation of indium in CH2X2/CH3CN media (X = Cl, Br, I) gives InX. Indium(I) chloride disproportionates, but InBr or InI react with CH2X2 to give X2InCH2X (X

Direct electrochemical synthesis of alkane- and arenethiolato derivatives of indium and thallium

The electrochemical oxidation of anodic indium in acetonitrile solutions of thiols RSH (R = C2H5, n-C4H9, C(CH3)2C2H5, C6H5, 2-C10H7, C6F5) has been shown to give thiolato derivatives of indium(I), -(II), or -(III), depending on R and on the experimental conditions. With R = C2H5 or n-C4H9, electrolysis in the absence of oxygen gives the hitherto unreported InSR compounds, while, with R = C5H11 or 2-C10H7, the products are In(SR)2, formulated as the In-In-bonded In2(SR)4. Arenethiols yield In(SR)3, and products of this stoichiometry are always obtained in the presence of oxygen. The structures of these compounds are discussed, as are the reactions of the indium(I) and -(II) species with iodine and certain other oxidizing agents. Corresponding reactions with thallium anodes gave T1SR for all R studied (C6H5, C6H4CH3-o, C6H4CH3-m, 2-C10H7).