376
C.W. Lee, J.Y. Lee / Organic Electronics 14 (2013) 370–377
35
30
25
20
15
10
5
electrons in the emitting layer and thus improves the
TAPC
recombination efficiency in the emitting layer. In the case
of TCBTA, the quantum efficiency was rather low, in spite
of the low driving voltage. Although the driving voltage
was low due to the high hole current density in TCBTA
device, this high hole density disrupted the holes and elec-
trons balance in the emitting layer, resulting in a low quan-
tum efficiency. The low quantum efficiency of TAPC device
is due to too low hole current density in the emitting layer
due to high energy barrier for hole injection.
The power efficiency–luminance curves of blue PHOL-
EDs are shown in Fig. 9. The power efficiency of TCBPA blue
PHOLEDs was higher than that of TCBTA because of the
high quantum efficiency of the TCBPA device, although
the driving voltage of TCBPA was not as low as that of
TCBTA. The power efficiency of the TCBPA device was even
higher than that of the TAPC device by 20%. The maximum
power efficiency of the TCBPA device was 29.2 lm/W.
TCBTA
TCBPA
0
0
1
100
10000
Luminance (cd/m2)
Fig. 9. Power efficiency–luminance curves of blue PHOLEDs with TCBTA,
TCBPA and TAPC hole transport materials.
density than TCBTA. As shown in the hole current density
device data, the high hole current density of TCBTA
increased the current density of TCBTA blue PHOLED.
Although the current density of the TCBPA device was
lower than that of TCBTA, it was higher than that of TAPC,
indicating that TCBPA is better than TAPC to increase the
current density in the emitting layer. The high current den-
sity of TCBTA and TCBPA devices implies high hole current
density in the emitting layer because the same electron
transport layer was used in all devices. This is closely
related with the energy barrier for hole injection between
the hole transport layer and emitting layer. Considering
the hole only device data of TAPC, TCBTA and TCBPA, the
TAPC device should show higher current density than the
TCBPA device. However, the high energy barrier of
0.63 eV between TAPC and mCPPO1 as shown in energy le-
vel diagram in Fig. 7 hindered hole injection in the TAPC
device, leading to low current density in the TAPC blue
PHOLED [31]. The energy barriers for hole injection of
TCBTA and TCBPA with the mCPPO1 emitting layer were
0.43 eV and 0.45 eV, respectively. The luminance showed
a similar relationship as the current density.
The quantum efficiency–luminance curves of blue
PHOLEDs are shown in Fig. 8. The quantum efficiency of
blue PHOLEDs was high in the TCBPA device with a maxi-
mum quantum efficiency of 21.8%. This high quantum effi-
ciency was also maintained at high luminance and the
quantum efficiency at 1000 cd/m2 was 20.2%. Compared
with TAPC, which showed a maximum quantum efficiency
of 18.5% and a quantum efficiency at 1000 cd/m2 of 16.4%,
TCBPA showed an approximate 20% improvement of quan-
tum efficiency. The high quantum efficiency of the TCBPA
device was attributed to the charge balance, high triplet
energy and electron-blocking effect of TCBPA. The triplet
energy of TCBPA was 2.86 eV, which was much higher than
that of FIrpic (2.65 eV) [32]. Therefore, the triplet exciton
quenching of FIrpic by TCBPA is suppressed and the triplet
excitons are confined in the emitting layer, leading to high
quantum efficiency. The LUMO level for electron blocking
also contributed to the charge confinement in the emitting
layer. The LUMO level of TCBPA was ꢁ2.04 eV, compared
with ꢁ2.64 eV for the host material. There is a 0.6 eV
energy barrier for electron leakage from the emitting layer
to the TCBPA hole-transport layer, which confines
6. Conclusions
Two high triplet energy hole-transport materials based
on the aromatic amine moiety and the diphenylmethyl
linkage were developed as hole-transport materials for
blue PHOLEDs. TCBTA lowered the driving voltage of blue
PHOLEDs, while TCBPA improved the quantum efficiency
of blue PHOLEDs. The power efficiency of blue PHOLEDs
was improved by more than 20% by using TCBPA instead
of the standard TAPC.
References
[1] C. Adachi, R.C. Kwong, P. Djurovich, V. Adamovich, M.A. Baldo, M.E.
Thompson, S.R. Forrest, Appl. Phys. Lett. 79 (2001) 2082.
[2] H. Sasabe, N. Toyota, H. Nakanishi, T. Ishizaka, Y. Pu, J. Kido, Adv.
Mater. 24 (2012) 3212.
[3] C. Han, G. Xie, H. Xu, Z. Zhang, L. Xie, Y. Zhao, S. Liu, W. Huang, Adv.
Mater. 23 (2012) 2491.
[4] S. Reineke, F. Lindner, G. Schwartz, N. Seidler, K. Walzer, B. Lüssem, K.
Leo, Nature 459 (2009) 234.
[5] S.-H. Eom, Y. Zheng, E. Wrzesniewski, J. Lee, N. Chopra, F. So, J. Xue,
Appl. Phys. Lett. 94 (2009) 153303.
[6] S.-J. Su, T. Chiba, T. Takeda, J. Kido, Adv. Mater. 20 (2008) 2125.
[7] H. Sasabe, E. Gonmori, T. Chiba, Y.-J. Li, D. Tanaka, S.-J. Su, T. Takeda,
Y.-J. Pu, K.I. Nakayama, J. Kido, Chem. Mater. 20 (2008) 5951.
[8] L. Xiao, S.-J. Su, Y. Agata, H. Lan, J. Kido, Adv. Mater. 21 (2009) 1271.
[9] Y. Chen, J. Chen, Y. Zhao, D. Ma, Appl. Phys. Lett. 100 (2012) 213301.
[10] J. Lee, J. Lee, J.Y. Lee, H.Y. Chu, Appl. Phys. Lett. 95 (2009) 253304.
[11] N. Chopra, J.S. Swensen, E. Plikarpov, L. Cosimbescu, F. So, A.B.
Padmaperuma, Appl. Phys. Lett. 97 (2010) 033304.
[12] F. Hsu, C. Chien, P. Shih, C. Shu, Chem. Mater. 21 (2009) 1017.
[13] S. Gong, Y. Chen, C. Yang, C. Zhong, J. Qin, D. Ma, Adv. Mater. 22
(2010) 5370.
[14] H.-H. Chou, C.-H. Cheng, Adv. Mater. 22 (2010) 2468.
[15] M.-T. Chu, M.-T. Lee, C.H. Chen, M.-R. Tseng, Org. Electron. 10 (2009)
1158.
[16] X. Cai, A.B. Padmaperuma, L.S. Sapochak, P.A. Vecchi, P.E. Burrows,
Appl. Phys. Lett. 92 (2008) 083308.
[17] S.-H. Eom, Y. Zheng, N. Chopra, J. Lee, F. So, Appl. Phys. Lett. 93
(2008) 123309.
[18] Y.J. Cho, J.Y. Lee, Adv. Mater. 23 (2011) 4568.
[19] M.-T. Lee, J.-S. Lin, M.-T. Chu, M.-R. Tseng, Appl. Phys. Lett. 94 (2009)
083506.
[20] D. Tanaka, Y. Agata, T. Takeda, S. Watanabe, J. Kido, Jpn. J. Appl. Phys.
46 (2007) L117.
[21] Y. Agata, H. Shimizu, J. Kido, Chem. Lett. 36 (2007) 316.
[22] C.W. Lee, J.Y. Lee, Chem. Eur. J. 19 (2012) 6457.
[23] M.J. Frisch, G.W. Trucks, H.B. Schlegel, G.E. Scuseria, M.A. Robb, J.R.
Cheeseman, J.A. Montgomery, T. Vreven Jr., K.N. Kudin, J.C. Burant,