Gallium, bis(N,N-di-tert-butyl-1,4-diaza-1,3-butadiene)-

Base Information

• Chemical Name: Gallium, bis(N,N-di-tert-butyl-1,4-diaza-1,3-butadiene)-
• CAS No.: 124592-82-1
• Molecular Formula: C₂₀H₄₀GaN₄
• Molecular Weight: 406.287
• Mol file: 124592-82-1.mol

Synonyms:

Chemical Property of Gallium, bis(N,N-di-tert-butyl-1,4-diaza-1,3-butadiene)-

Chemical Property:

Purity/Quality:

Safty Information:

• Pictogram(s):  
• Hazard Codes: 

MSDS Files:

SDS file from LookChem

Useful:

Technology Process of Gallium, bis(N,N-di-tert-butyl-1,4-diaza-1,3-butadiene)-

There total 3 articles about Gallium, bis(N,N-di-tert-butyl-1,4-diaza-1,3-butadiene)- which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield: 46.0%

[((((Bu(t))NC(H))2)GaI)2] + sodium hexamethyldisilazane (1070-89-9) → gallium (7440-55-3) + bis(1,4-di-t-butyl-1,4-diazabuta-1,3-diene)gallium (124592-82-1) + [(((Bu(t))NC(H))2)Ga(N(SiMe3)2)I]

Guidance literature:

In diethyl ether; under Ar atm. to soln. Ga complex in Et2O NaN(SiMe3)2 in Et2O (1:2) was added at -78°C over 5 min, soln. was warmed to room temp. and stirred overnight; volatiles were emoved in vacuo, residue was extd. with hexane, filtered,concd., and cooled to -30°C overnight; elem. anal.;

DOI:10.1021/ic0486825

Reference yield: 45.0%

[((((Bu(t))NC(H))2)GaI)2] + [LiP(SiMe3)2(dme)] (59610-49-0) → gallium (7440-55-3) + bis(1,4-di-t-butyl-1,4-diazabuta-1,3-diene)gallium (124592-82-1) + [(((Bu(t))NC(H))2)Ga(P(SiMe3)2)I]

Guidance literature:

In diethyl ether; under Ar atm. to soln. Ga complex in Et2O LiP(SiMe3)2*DME in Et2O (1:2) was added at -78°C over 5 min, soln. was warmed to room temp. andstirred overnight; volatiles were emoved in vacuo, residue was extd. with hexane, filtered,concd., and cooled to -30°C overnight; elem. anal.;

DOI:10.1021/ic0486825

Reference yield: 33.0%

[((((Bu(t))NC(H))2)GaI)2] + [LiAs(SiMe3)2*DME] (181886-00-0) → gallium (7440-55-3) + bis(1,4-di-t-butyl-1,4-diazabuta-1,3-diene)gallium (124592-82-1) + [(((Bu(t))NC(H))2)Ga(As(SiMe3)2)I]

Guidance literature:

In diethyl ether; under Ar atm. to soln. Ga complex in Et2O LiAs(SiMe3)2*DME in Et2O (1:2)was added at -78°C over 5 min, soln. was warmed to room temp. an d stirred overnight; volatiles were emoved in vacuo, residue was extd. with hexane, filtered,concd., and cooled to -30°C overnight; elem. anal.;

DOI:10.1021/ic0486825

upstream raw materials:

[LiAs(SiMe₃)2*DME]

[LiP(SiMe₃)2(dme)]

sodium hexamethyldisilazane

Refernces