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7440-55-3

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7440-55-3 Usage

General Description

Gallium is a soft, silvery metal with atomic number 31 and chemical symbol Ga. It has a low melting point of 29.76°C, allowing it to melt in the palm of a hand. Gallium is primarily used in the production of semiconductors and LEDs, as well as in medical imaging and nuclear medicine. It is also used in the production of high-temperature thermometers and as an alloying agent in the manufacturing of solid-state electronics. Gallium is considered to be non-toxic and is therefore used in some pharmaceuticals and dental applications. Additionally, it has potential applications in solar energy and as a coolant in nuclear reactors.

Check Digit Verification of cas no

The CAS Registry Mumber 7440-55-3 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 7,4,4 and 0 respectively; the second part has 2 digits, 5 and 5 respectively.
Calculate Digit Verification of CAS Registry Number 7440-55:
(6*7)+(5*4)+(4*4)+(3*0)+(2*5)+(1*5)=93
93 % 10 = 3
So 7440-55-3 is a valid CAS Registry Number.
InChI:InChI=1/Ga

7440-55-3 Well-known Company Product Price

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  • Sigma-Aldrich

  • (NIST994)  Isotopic standard for gallium  NIST SRM 994

  • 7440-55-3

  • NIST994

  • 9,680.58CNY

  • Detail
  • Aldrich

  • (203319)  Gallium  99.9995% trace metals basis

  • 7440-55-3

  • 203319-5G

  • 785.07CNY

  • Detail
  • Aldrich

  • (203319)  Gallium  99.9995% trace metals basis

  • 7440-55-3

  • 203319-25G

  • 2,929.68CNY

  • Detail
  • Aldrich

  • (263273)  Gallium  99.999% trace metals basis

  • 7440-55-3

  • 263273-10G

  • 1,593.54CNY

  • Detail
  • Aldrich

  • (263273)  Gallium  99.999% trace metals basis

  • 7440-55-3

  • 263273-50G

  • 5,500.17CNY

  • Detail
  • Aldrich

  • (263265)  Gallium  99.99% trace metals basis

  • 7440-55-3

  • 263265-10G

  • 1,107.99CNY

  • Detail
  • Aldrich

  • (263265)  Gallium  99.99% trace metals basis

  • 7440-55-3

  • 263265-50G

  • 4,564.17CNY

  • Detail

7440-55-3SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 15, 2017

Revision Date: Aug 15, 2017

1.Identification

1.1 GHS Product identifier

Product name gallium atom

1.2 Other means of identification

Product number -
Other names GALLIUM

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:7440-55-3 SDS

7440-55-3Synthetic route

decamethylsilicocene

decamethylsilicocene

Gallium trichloride
13450-90-3

Gallium trichloride

A

gallium
7440-55-3

gallium

B

gallium trichloride-pyridine (1/1)
856588-85-7, 15024-93-8

gallium trichloride-pyridine (1/1)

Conditions
ConditionsYield
In toluene inert atmosphere; soln. of Si-compd. cooled to -80°C, addn. of GaCl3 (equiv. amt.) soln., warming to room temp., Gallium pptn. on standing (3-5 d), filtration of Ga, pptn. on pyridine addn. to filtrate; filtration;A 98%
B 87%
decamethylsilicocene

decamethylsilicocene

gallium(III) bromide
13450-88-9

gallium(III) bromide

A

gallium
7440-55-3

gallium

B

pyridine; compound with gallium bromide

pyridine; compound with gallium bromide

Conditions
ConditionsYield
In toluene inert atmosphere; soln. of Si-compd. cooled to -80°C, addn. of GaBr3 (equiv. amt.) soln., warming to room temp., gallium pptn. on standing (3-5 d), filtration of Ga, pptn. on pyridine addn. to filtrate; filtration;A 96%
B 79%
GaBr3(1,3-dimesitylimidazol-2-ylidene)

GaBr3(1,3-dimesitylimidazol-2-ylidene)

A

gallium
7440-55-3

gallium

B

GaHBr2(1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene)
1159704-40-1

GaHBr2(1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene)

Conditions
ConditionsYield
In toluene (under Ar, Schlenk); soln. of Ga-complex added dropwise to soln. of Ga-complex in toluene with stirring at room temp., heated to 50°C for36 h; filtered, volatiles removed in vacuo;A n/a
B 71%
gallium(III) trichloride

gallium(III) trichloride

ephedrine hydrochloride
63991-26-4

ephedrine hydrochloride

A

gallium
7440-55-3

gallium

B

[Ga(ephedrine)2(Cl)3]

[Ga(ephedrine)2(Cl)3]

Conditions
ConditionsYield
With ammonium hydroxide In methanol for 3h; pH=8 - 9; Reflux;A n/a
B 66%
digallium tetrachloride

digallium tetrachloride

gallium
7440-55-3

gallium

Conditions
ConditionsYield
With 2,3,5,6-tetramethyl-1,4-bis(trimethylsilyl)-1,4-diaza-2,5-cyclo-hexadiene In tetrahydrofuran at 20℃; for 15h; Inert atmosphere;59%
exo-Li(N,N,N',N'-tetramethylethylenediamine)-1-Li(N,N,N',N'-tetramethylethylenediamine)-2,3-(SiMe3)2-2,3-C2B4H4

exo-Li(N,N,N',N'-tetramethylethylenediamine)-1-Li(N,N,N',N'-tetramethylethylenediamine)-2,3-(SiMe3)2-2,3-C2B4H4

Gallium trichloride
13450-90-3

Gallium trichloride

A

gallium
7440-55-3

gallium

B

1-Cl-1-(N,N,N',N'-tetramethylethylenediamine)-2,3-(SiMe3)2-closo-1,2,3-GaC2B4H4

1-Cl-1-(N,N,N',N'-tetramethylethylenediamine)-2,3-(SiMe3)2-closo-1,2,3-GaC2B4H4

Conditions
ConditionsYield
In benzene byproducts: LiCl; addn. of soln. of carborane to GaCl3 (C6H6, 0°C), stirring at room temp. overnight; filtration off of LiCl and Ga, concn.; elem. anal.;A n/a
B 51%
[((((Bu(t))NC(H))2)GaI)2]

[((((Bu(t))NC(H))2)GaI)2]

[LiAs(SiMe3)2*DME]
181886-00-0

[LiAs(SiMe3)2*DME]

A

gallium
7440-55-3

gallium

B

bis(1,4-di-t-butyl-1,4-diazabuta-1,3-diene)gallium
124592-82-1

bis(1,4-di-t-butyl-1,4-diazabuta-1,3-diene)gallium

C

[(((Bu(t))NC(H))2)Ga(As(SiMe3)2)I]

[(((Bu(t))NC(H))2)Ga(As(SiMe3)2)I]

Conditions
ConditionsYield
In diethyl ether under Ar atm. to soln. Ga complex in Et2O LiAs(SiMe3)2*DME in Et2O (1:2)was added at -78°C over 5 min, soln. was warmed to room temp. an d stirred overnight; volatiles were emoved in vacuo, residue was extd. with hexane, filtered,concd., and cooled to -30°C overnight; elem. anal.;A n/a
B n/a
C 33%
lithium tetrahydridogallate

lithium tetrahydridogallate

H2Ga(μ-Cl)2GaH2

H2Ga(μ-Cl)2GaH2

A

gallium
7440-55-3

gallium

B

Li(1+)*GaH3Cl(1-)=LiGaH3Cl

Li(1+)*GaH3Cl(1-)=LiGaH3Cl

C

gallane
13572-93-5

gallane

Conditions
ConditionsYield
With octane byproducts: H2; at -30°C in vac. (<1E-4 mm Hg); Gallane condenses as a white solid, elem. anal.;A n/a
B n/a
C 5%
With octane In solid byproducts: H2; at -30°C in vac. (<1E-4 mm Hg); Gallane condenses as a white solid, elem. anal.;A n/a
B n/a
C 5%
water
7732-18-5

water

Gallium trichloride
13450-90-3

Gallium trichloride

A

gallium
7440-55-3

gallium

gallium oxide hydroxide

gallium oxide hydroxide

Conditions
ConditionsYield
In water byproducts: H(1+); Sonication; Ar atmosphere (1.5 atm); 100 W/cm**2, 20-kHz, room temp., 90 min - 6 h; washing (H2O, 4 times), drying (vac.); detd. by powder X-ray diffraction;A 1%
B n/a
1,1,3,3-tetramethylgyanidine-gallane (1/1)
325774-15-0

1,1,3,3-tetramethylgyanidine-gallane (1/1)

A

gallium
7440-55-3

gallium

B

hydrogen
1333-74-0

hydrogen

C

N,N,N',N'-tetramethylguanidine
80-70-6

N,N,N',N'-tetramethylguanidine

Conditions
ConditionsYield
at 85 - 90℃; Thermodynamic data;
gallium(III) oxide

gallium(III) oxide

gallium
7440-55-3

gallium

Conditions
ConditionsYield
With filter paper coal In neat (no solvent) annealing;
With hydrogen In neat (no solvent) in H2-stream at red heat;;
With filter paper coal In neat (no solvent) annealing;
With H2 In neat (no solvent) in H2-stream at red heat;;
diborane
19287-45-7

diborane

trimethyl gallium
1445-79-0

trimethyl gallium

A

gallium
7440-55-3

gallium

B

methyl diborane
23777-55-1

methyl diborane

C

hydrogen
1333-74-0

hydrogen

Conditions
ConditionsYield
at room temp. with excess of B2H6;
at room temp. with excess of B2H6;
gallium arsenide

gallium arsenide

A

gallium
7440-55-3

gallium

Conditions
ConditionsYield
In solid at 580-650°C; UPS; Auger spect.;
gallium arsenide

gallium arsenide

gallium
7440-55-3

gallium

Conditions
ConditionsYield
In neat (no solvent) heated at 585 - 750 °C for 3 - 8 min under vac.;
trimethyl gallium
1445-79-0

trimethyl gallium

gallium
7440-55-3

gallium

Conditions
ConditionsYield
In gaseous matrix Kinetics; Irradiation (UV/VIS); photolysis at 403.3 nm; KrF laser; carrier gas H2, D2 or CH4; monitoring fluorescence at 417.2 nm;
In neat (no solvent) deposition of Ga droplets on heated Si substrate (480 °C) at moleflow of GaMe3 of 2.2E-5 mol/min for 30 s;
In neat (no solvent) thermal decompn. on heated Cu or GaAs surfaces; detn. by MPI/MS;
trimethyl gallium
1445-79-0

trimethyl gallium

A

gallium
7440-55-3

gallium

B

monomethyl gallium
99601-83-9

monomethyl gallium

C

dimethylgallium
106693-86-1

dimethylgallium

Conditions
ConditionsYield
In gas byproducts: CH3, C2H6; Irradiation (UV/VIS); laser photolysis;
In gas byproducts: C2H6, CH3; Irradiation (UV/VIS); photolysis (190-310 nm); studied by laser mass spectrometry and UV absorption spectrometry;
gallium(III)

gallium(III)

cadmium
7440-43-9

cadmium

gallium
7440-55-3

gallium

Conditions
ConditionsYield
0%
gallium(III)

gallium(III)

gallium
7440-55-3

gallium

Conditions
ConditionsYield
0%
gallium nitride

gallium nitride

oxygen
80937-33-3

oxygen

silicon
7440-21-3

silicon

A

gallium(III) oxide

gallium(III) oxide

B

gallium
7440-55-3

gallium

Conditions
ConditionsYield
In neat (no solvent) High Pressure; under Ar flow; Si wafer placed on Al plate; Ga droplets (obtained from GaN at 1150°C) transferred by Ar contg. O2 (7.8 Torr partial pressure) and deposited onto Si wafer; heated at 1150°C (400 Torr) for5 h; detd. by scanning and transmission electron microscopy, and energy dispersive X-ray spectroscopy;A n/a
B 0%
C 0%
Gallium trichloride
13450-90-3

Gallium trichloride

gallium
7440-55-3

gallium

Conditions
ConditionsYield
With arsenic(III) trioxide In water Electrochem. Process; electrodeposition, pH 14 (silicon substrate, -2.99 V vs Ag/AgCl,lead substrate, -1.73 V vs Ag/AgCl ); X-ray diffraction, Auger electron spectroscopy;
With potassium hydroxide In potassium hydroxide Electrolysis;
With LiBH(CH2CH3)3 In tetrahydrofuran byproducts: LiCl; (Ar); addn. of dioctylether to THF soln. of Superhydride, stirring for 1.5 at 90°C in vac., addn. of gallium compd.; centrifugation, washing with THF, drying in vac. for 20 min;
gallium

gallium

arsenic

arsenic

gallium arsenide

gallium arsenide

Conditions
ConditionsYield
In neat (no solvent) Ga, As evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 140h;100%
With iodine In neat (no solvent) stoichiometric amts. of Ga and As heated at 1000°C for 5 days at the presence of a small amts. of iodine; identified by X-ray diffraction;
In gas gas phase reaction of Ga and As vapour at 1E-10 Torr;
gallium
7440-55-3

gallium

germanium
7440-56-4

germanium

antimony
7440-36-0

antimony

Ge#dotGa#dotSb

Ge#dotGa#dotSb

Conditions
ConditionsYield
In neat (no solvent) Ge, Ga and Sb placed in evacuated (1E-2 Pa), sealed quartz ampoules, annealed (800°C, 1400 h); single phase (microstructural analysis), samples prepared with total of 0.25 at.% dopant (Ge = 99.75 at.%) and others with total dopant content of 5 E19 cm-3, also Ge:Sb = 3:1, 1:1 and 1:3;100%
gallium
7440-55-3

gallium

lanthanum
7439-91-0

lanthanum

lanthanum(III) chloride
10099-58-8

lanthanum(III) chloride

La10Cl4Ga5

La10Cl4Ga5

Conditions
ConditionsYield
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (900°C, 20 d);100%
gallium
7440-55-3

gallium

germanium
7440-56-4

germanium

gallium doped germanium

gallium doped germanium

Conditions
ConditionsYield
In neat (no solvent) Ge and Ga placed in evacuated (1E-2 Pa), sealed quartz ampoules, annealed (800°C, 1400 h); single phase (microstructural analysis), dopant content of 5 E19 cm-3;100%
gallium
7440-55-3

gallium

antimony
7440-36-0

antimony

galium antimonide

galium antimonide

Conditions
ConditionsYield
In neat (no solvent) Ga, Sb evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 140h;100%
melting in a quartz crucible in flowing hydrogen (purified over Pd, flow rate 70 ml/min); for compensation of evapn. of Sb, 0.1% excess Sb was applied;;
In neat (no solvent) Sb/Ga flux ratio was approx. 8.5, GaAs(001) as substrate, mol. beam epitaxy;
gallium
7440-55-3

gallium

lanthanum
7439-91-0

lanthanum

lanthanum(III) bromide
13536-79-3

lanthanum(III) bromide

La3Br3Ga

La3Br3Ga

Conditions
ConditionsYield
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (850°C, 20 d);100%
gallium
7440-55-3

gallium

lanthanum
7439-91-0

lanthanum

lanthanum(III) bromide
13536-79-3

lanthanum(III) bromide

La10Br4Ga5

La10Br4Ga5

Conditions
ConditionsYield
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (950°C, 33 d);100%
gallium
7440-55-3

gallium

cerium(III) bromide
14457-87-5

cerium(III) bromide

Ce4Br2Ga5

Ce4Br2Ga5

Conditions
ConditionsYield
In neat (no solvent, solid phase) all manipulations under Ar atm.; stoich. mixt. of compds. sealed in Ta tubes then tubes sealed inside silica ampoules under vac. (ca. 1E-2 mbar), heated at 930°C for 36 d;100%
gallium
7440-55-3

gallium

ethyl iodide
75-03-6

ethyl iodide

2Ga(3+)*3I(1-)*3C2H5(1-)

2Ga(3+)*3I(1-)*3C2H5(1-)

Conditions
ConditionsYield
With gallium(III) trichloride for 5h; Inert atmosphere; Reflux;100%
gallium
7440-55-3

gallium

methyl iodide
74-88-4

methyl iodide

2Ga(3+)*3I(1-)*3CH3(1-)

2Ga(3+)*3I(1-)*3CH3(1-)

Conditions
ConditionsYield
With gallium(III) trichloride for 2h; Inert atmosphere; Reflux;100%
gallium
7440-55-3

gallium

iodine
7553-56-2

iodine

A

(gallium triiodide)2

(gallium triiodide)2

B

Ga(1+)*GaI4(1-)=Ga2I4
17845-89-5

Ga(1+)*GaI4(1-)=Ga2I4

C

2Ga(1+)*Ga2I6(2-) = Ga2(Ga2I6)

2Ga(1+)*Ga2I6(2-) = Ga2(Ga2I6)

Conditions
ConditionsYield
In toluene at 30℃; Glovebox; Inert atmosphere; Sonication;A n/a
B 100%
C n/a
gallium
7440-55-3

gallium

chlorine
7782-50-5

chlorine

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In melt 5 mol% excess of gaseous chlorine passed through metal gallium melt;99%
excess Cl2;;
mixt. heating (two-section glass tube, 200-250°C); vac. sublimation (water pump, ca. 250°C);
gallium
7440-55-3

gallium

germanium
7440-56-4

germanium

yttrium

yttrium

Y3Ga9Ge

Y3Ga9Ge

Conditions
ConditionsYield
In melt mixing of Y, Ga and Ge in ratio Y:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5 h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;99%
gallium
7440-55-3

gallium

germanium
7440-56-4

germanium

ytterbium

ytterbium

Yb3Ga9Ge

Yb3Ga9Ge

Conditions
ConditionsYield
In melt mixing of Yb, Ga and Ge in ratio Yb:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;99%
gallium
7440-55-3

gallium

germanium
7440-56-4

germanium

samarium
7440-19-9

samarium

Sm3Ga9Ge

Sm3Ga9Ge

Conditions
ConditionsYield
In melt mixing of Sm, Ga and Ge in ratio Sm:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;99%
erbium

erbium

gallium
7440-55-3

gallium

ammonia
7664-41-7

ammonia

erbium-implanted gallium nitride

erbium-implanted gallium nitride

Conditions
ConditionsYield
In melt Ga mixed with 1 mol% Er in presence of wetting agent Bi in quartz tube placed in furnace, after purging with Ar for 1 h, heating under Ar flow at 950-1050 °C, gas switched from Ar to NH3, temp. held for 3-5 h;99%
In gas Ga and Er were deposited on sapphire substrate at 700°C under ammonia flow;
gallium
7440-55-3

gallium

triethylarsine diiodide
81795-88-2

triethylarsine diiodide

[GaI2(As(C2H5)3)]2
182921-15-9

[GaI2(As(C2H5)3)]2

Conditions
ConditionsYield
In not given recrystn. (Et2O);99%
gallium
7440-55-3

gallium

methanesulfonic acid
75-75-2

methanesulfonic acid

galium(III) mesylate

galium(III) mesylate

Conditions
ConditionsYield
In nitromethane at 20℃; for 1.5h; Sonication;99%
gallium
7440-55-3

gallium

water
7732-18-5

water

gallium(III) oxide

gallium(III) oxide

Conditions
ConditionsYield
Stage #1: gallium; water With hydrogenchloride; potassium oxalate; urea at 20℃; for 0.5h;
Stage #2: at 179.84℃; for 3h; Reagent/catalyst; Autoclave;
99%
gallium
7440-55-3

gallium

chlorine
7782-50-5

chlorine

gallium(III) trichloride

gallium(III) trichloride

Conditions
ConditionsYield
Heating;99%
In neat (no solvent)
gallium
7440-55-3

gallium

aluminium
7429-90-5

aluminium

aluminum gallium

aluminum gallium

Conditions
ConditionsYield
In neat (no solvent) Al and Ga metals were heated in sealed quartz tube to 700° and then cooled to room temp.;98%
In neat (no solvent)
In neat (no solvent)
In neat (no solvent) melting Ga and Al in a porcelain tube in vac.;;
gallium
7440-55-3

gallium

3,5-di-tert-butyl-o-benzoquinone
3383-21-9

3,5-di-tert-butyl-o-benzoquinone

gallium(III) tris(3,5-di-tert-butyl-1,2-semibenzoquinonate)

gallium(III) tris(3,5-di-tert-butyl-1,2-semibenzoquinonate)

Conditions
ConditionsYield
In toluene N2 atmosphere; refluxing (24 h); removal of solvent; elem. anal.;98%
gallium
7440-55-3

gallium

9,10-phenanthrenequinone
84-11-7

9,10-phenanthrenequinone

gallium(III) tris(9,10-phenanthrenesemiquinonate)

gallium(III) tris(9,10-phenanthrenesemiquinonate)

Conditions
ConditionsYield
In toluene 1:3 mixt. refluxed in toluene for 18 h (until metal was completely dissolved); filtration, evapd. to dryness, elem. anal.;98%
gallium
7440-55-3

gallium

2,6-bis[1-[(2,6-di(iso-propyl)phenyl)imino]-benzyl]pyridine
301658-93-5

2,6-bis[1-[(2,6-di(iso-propyl)phenyl)imino]-benzyl]pyridine

iodine
7553-56-2

iodine

toluene
108-88-3

toluene

[GaI2(2,6-bis[1-[(2,5-di(isopropyl)phenyl)imino]benzyl]pyridine)GaI4]3*toluene

[GaI2(2,6-bis[1-[(2,5-di(isopropyl)phenyl)imino]benzyl]pyridine)GaI4]3*toluene

Conditions
ConditionsYield
In toluene Sonication; (under N2); Ga and I2 added to soln. of ligand in toluene, sealed, sonicated for 3 h, stirred overnight; filtered, washed with hexane, dried under vac.;98%
gallium
7440-55-3

gallium

methyl aluminium sesquichloride

methyl aluminium sesquichloride

A

trimethylaluminum
75-24-1

trimethylaluminum

B

trimethyl gallium
1445-79-0

trimethyl gallium

Conditions
ConditionsYield
With methylene chloride; sodium at 40 - 50℃; under 375.038 Torr; Inert atmosphere; Flow reactor;A 93.7%
B 96.8%

7440-55-3Relevant articles and documents

A lanthanide-gallium complex stabilized by the N-heterocyclic carbene group

Arnold, Polly L.,Liddle, Stephen T.,McMaster, Jonathan,Jones, Cameron,Mills, David P.

, p. 5360 - 5361 (2007)

The complex [Nd(L′){Ga(NArCH)2}(N″)(THF)], which exhibits the first f-element-gallium bond, is formed from the reaction between the N-heterocyclic carbene-supported neodymium complex [Nd(L′)(N″)(I)] (L′ = ButNCH2CH2{C(NCSiMe3 CHNBut)}; N″ = N(SiMe3)2) and the anionic gallium(I) heterocycle [Ga(NArCH)2][K(tmeda)] (Ar = 2,6-Pri2C6H3). The Nd-Ga bond energy is calculated to be 386 kJ mol-1. Copyright

Bis-NHC Aluminium and Gallium Dihydride Cations [(NHC)2EH2]+ (E = Al, Ga)

Hock, Andreas,Werner, Luis,Riethmann, Melanie,Radius, Udo

, p. 4015 - 4023 (2020)

The NHC alane and gallane adducts (NHC)·AlH2I (NHC = Me2ImMe 7, iPr2Im 8, iPr2ImMe 9) and (NHC)·GaH2I (NHC = Me2ImMe 10, iPr2ImMe 11,

Mono- and digallane complexes of a tridentate amido-diamine ligand

Luo, Bing,Kucera, Benjamin E.,Gladfelter, Wayne L.

, p. 3463 - 3465 (2005)

Bis(2-dimethylaminoethyl)amido gallane, H2GaN(CH 2CH2-NMe2)2, that melts at 27 °C and remains stable upon heating at 55 °C for two days, was synthesized either from the reaction of the quinuclidine adduct of monochlorogallane with the lithium salt of the corresponding amine, or from the reaction of trimethylamine gallane and the amine; the latter affords an unusual co-product with both GaH2 and GaH3 bonded to the same amido nitrogen. The Royal Society of Chemistry 2005.

Sonochemical hydrolysis of Ga3+ ions: Synthesis of scroll-like cylindrical nanoparticles of gallium oxide hydroxide

Avivi,Mastai,Hodes,Gedanken

, p. 4196 - 4199 (1999)

The sonochemical reaction of an aqueous solution of GaCl3 led to the formation of gallium oxide hydroxide rolled up in a scroll-like layered structure to give cylinders 80-120 nm in diameter and 500-600 nm in length. Small amounts of metallic Ga were incorporated with these tubes. A mechanism for this reaction has been suggested where the reaction takes place in a shell surrounding the collapsing bubble.

Squire, D. W.,Dulcey, C. S.,Lin, M. C.

, p. 112 - 117 (1986)

Determination of lanthanides (La, Ce, Nd, Sm) and other elements in metallic gallium by instrumental neutron activation analysis

Figueiredo,Avristcher,Masini,Diniz,Abr?o

, p. 36 - 39 (2002)

This paper reports the analytical results of lanthanides and other elements in pure elemental gallium. The analyses were performed by instrumental neutron activation analysis (INAA) at the nuclear reactor IEA-R1, IPEN, S?o Paulo. INAA has the advantage of being a multi-elemental and non-destructive analytical method. After irradiation, the samples were set aside for some days before running high resolution gamma spectrometry with a hyper-pure Ge detector. Gallium was recovered from the Bayer process alkaline leach solution, named by local aluminum industry as 'weak soda', (spent liquor) with a concentration of about 150 mg l-1. As a first step, gallium was recovered from the 'weak soda' and enriched using a complexing ion-exchanger of the polyamidoxime type specially synthesized in the country for this purpose. After washing the column with water and then with pure sodium hydroxide to remove the interstitial 'spent liquor', gallium was eluted from the resin. The eluted gallium solution was made to 4 mol l-1 in NaOH and subject to electrolysis. The metal was then collected from the electrodes and given a final purification step by dilute inorganic acid stripping. The most representative lanthanide elements found and analyzed in the metallic gallium were La, Ce, Nd and Sm. One of the most recent samples exhibited the following results: (μg g-1) La (16.1), Ce (15.5), Nd (11.8) and Sm (3.6). Besides the lanthanides, the following elements were also analyzed: U, Cr, Fe, Co, Zn, Mo, Se, Sb and Ba. The results showed that the metal obtained is highly pure. The purity can be enhanced by stripping the metallic gallium with a dilute mineral acid.

Monochlorogallane: Synthesis, Properties, and Structure of the Dimer H2Ga(μ-Cl)2GaH2 in the Gas Phase as determined by Electron Diffraction

Goode, Michael J.,Downs, Anthony J.,Pulham, Colin R.,Rankin, David W. H.,Robertson, Heather E.

, p. 768 - 769 (1988)

Monochlorogallane, synthesised by methathesis involving gallium(III) chloride and thrimethylsilane, has been characterised by its spectroscopic and chemical properties; electron diffraction has established the structure of the dimer H2Ga(μ-Cl)2GaH2, the p

Catalytic deoxygenation of benzaldehyde over gallium-modified ZSM-5 zeolite

Ausavasukhi, Artit,Sooknoi, Tawan,Resasco, Daniel E.

, p. 68 - 78 (2009)

The deoxygenation of benzaldehyde has been investigated over gallium-modified ZSM-5 catalysts. In the absence of H2, Ga/HZSM-5 catalyzes benzaldehyde decarbonylation resulting in benzene and CO. The active sites for this reaction are the strong

Reactions of Gallium Hydrides with 1,4-Di-t-butyl-1,4-diazabutadiene: Subvalent and Hydrometallation Products

Henderson, Mark J.,Kennard, Colin H. L.,Raston, Colin L.,Smith, Graham

, p. 1203 - 1204 (1990)

Reaction of LiGaH4 and gallium metal with 1,4-di-t-butyl-1,4-diazabutadiene (dbdab) in diethyl ether at room temperature yields the monomeric, formally gallium(II) species , (1), previously prepared using metal vapours, and GaH3*NMe3 with dbda

Reactions of a gallium(ll)-diazabutadiene dimer, [(([(H)C(BU t)N]2)GaI)2], with [MESiMe3J 2] (M = Li or Na; e = N, P, or As): Structural, EPR, and ENDOR characterization of paramagnetic gallium(lll) pnictide complexes

Antcllff, Karen L.,Baker, Robert J.,Jones, Cameron,Murphy, Damien M.,Rose, Richard P.

, p. 2098 - 2105 (2005)

The reactions of the paramagnetic gallium(ll) complex [((Bu t-DAB)Gal)2] (But-DAB = {(Bu tNC(H)}2) with the alkali metal pnictides [ME(SiMe 3)2] (M = Li or Na; E = N, P, or As) have been carried out under a range of stoichiometries. The 1:2 reactions have led to a series of paramagnetic gallium(III)-pnictide complexes, [(But-DAB) Ga{E(SiMe3)2}I] (E = N, P, or As), while two of the 1:4 reactions afforded [(But-DAB)Ga{ E(SiMe3) 2}2] (E = P or As). In contrast, treatment of [{(Bu t-DAB)Gal)2] with 4 equiv of [NaN(SiMe3) 2} resulted in a novel gallium heterocycle coupling reaction and the formation of the diradical species [(But-DAB)Ga{N(SiMe 3)2){[CC(H)N2(But) 2]Ga[N(SiMe3J2]CH3)]. The mechanism of this unusual reaction has been explored, and evidence suggests it involves an intramolecular transmethylation reaction. The X-ray crystal structures of all prepared complexes are reported, and all have been characterized by EPR and ENDOR spectroscopies. The observed spin Hamiltonian parameters provide a detailed picture of the distribution of the unpaired spin density over the molecular frameworks of the complexes.

Ga9(CMe3)9, an important new building block in the structural chemistry of the alkylelement(I) compounds EnRn (E = B - In)

Uhl, Werner,Cuypers, Lars,Harms, Klaus,Kaim, Wolfgang,Wanner, Matthias,Winter, Rainer,Koch, Rainer,Saak, Wolfgang

, p. 566 - 568 (2001)

A simple preparative method has been employed for the synthesis of the novel cluster compound Ga9 (CMe3)9, which contains a tricapped trigonal prism of monovalent gallium atoms. Electron transfer processes, were observed similar to those of polyboranes, leading to the reversible formation of the corresponding radical anion.

Synthesis and catalytic properties of nanoparticulate intermetallic Ga-Pd compounds

Armbruester, Marc,Wowsnick, Gregor,Friedrich, Matthias,Heggen, Marc,Cardoso-Gil, Raul

, p. 9112 - 9118 (2011)

A two-step synthesis for the preparation of single-phase and nanoparticulate GaPd and GaPd2 by coreduction of ionic metal-precursors with LiHBEt3 in THF without additional stabilizers is described. The coreduction leads initially to the formation of Pd nanoparticles followed by a Pd-mediated reduction of Ga3+ on their surfaces, requiring an additional annealing step. The majority of the intermetallic particles have diameters of 3 and 7 nm for GaPd and GaPd 2, respectively, and unexpected narrow size distributions as determined by disk centrifuge measurements. The nanoparticles have been characterized by XRD, TEM, and chemical analysis to ensure the formation of the intermetallic compounds. Unsupported nanoparticles possess high catalytic activity while maintaining the excellent selectivity of the ground bulk materials in the semihydrogenation of acetylene. The activity could be further increased by depositing the particles on α-Al2O3.

Unexpected formation of gallium-gallium single bonds by irradiation of the hydride [(Me3C)2GaH]3

Uhl, Werner,Cuypers, Lars,Geiseler, Gertraud,Harms, Klaus,Neumueller, Bernhard

, p. 2398 - 2400 (2001)

Di(tert-butyl)gallium hydride 1 dismutates partially in solution forming tri(tert-butyl)gallium 2 and the sesquihydride [(Me3C)2GaH]2[H2GaCMe 3]2 (3). The loss of tert-butyl radicals upon irradiation of this mixture with day light or an UV lamp gave the hexagallium compound (Me3CGaGaCMe3)2(μ-H)2[μ-H 2Ga(CMe3)2]2 (4), which possesses two Ga-Ga single bonds. These Ga2 groups are bridged by two hydrogen atoms to give a six-membered Ga4H2 heterocycle. Couples of opposite gallium atoms of this heterocycle are bridged via Ga-H-Ga 3c-2e bonds by two H2Ga(CMe3)2 ligands, which are situated above and below the molecular plane. Compound 4 may be described as a hypho-hexagallane(14) cluster compound.

Liquid gallium columns sheathed with carbon: Bulk synthesis and manipulation

Zhan, Jinhua,Bando, Yoshio,Hu, Junqing,Golberg, Dmitri,Nakanishi, Haruyuki

, p. 11580 - 11584 (2005)

It is impossible to fabricate isolated gallium nanomaterials due to the low melting point of Ga (29.8?°C) and its high reactivity. We report the bulk synthesis of uniform liquid Ga columns encapsulated into carbon nanotubes through high-temperature chemical reaction between Ga and CH4. The diameter of filled Ga liquid columns is a??25 nm, and their length is up to several micrometers. The thickness of the carbon sheaths is a??6 nm. Simultaneous condensation of a Ga vapor and carbon clusters results in the generation of Ga-filled carbon nanotubes. A convergent 300 kV electron beam generated in a field emission high-resolution electron microscope is demonstrated to be a powerful tool for delicate manipulation of the liquid Ga nanocolumns: they can be gently joined, cut, and sealed within carbon nanotubes. The self-organization of a carbon sheath during the electron-beam irradiation is discussed. The electron-beam irradiation may also become a decent tool for Ga-filled carbon nanotube thermometer calibration. ? 2005 American Chemical Society.

Collisional quenching of Ga(5p) atoms by H2, D2 and CH4

Lee,Son,Bae,Ku

, p. 531 - 537 (1998)

Collisional quenching of Ga(5p) atoms by H2, D2 and CH4 has been studied. The gallium atoms were generated by photolysis of trimethyl gallium using a KrF laser. The Ga(5p) state was populated by two-photon excitation from the ground state and cascade fluorescence from Ga(5s) atoms was analyzed to extract quenching rate constants for Ga(5p) atoms. The apparent quenching rate constants for Ga(5p) atoms are (4.6±0.3)×10-10, (3.4±0.3)×10-10 and (7.8±0.2)×10-11 cm3 molecule-1 s-1 by H2, D2 and CH4, respectively. It is found that the predominant process for the large quenching rate constants for Ga(5p) atoms by H2 and D2 is the energy transfer for Ga(5s) formation.

Electrodeposition of GaAs from aqueous electrolytes

Yang,Landau,Angus

, p. 3480 - 3488 (1992)

Gallium arsenide films were electrodeposited from both alkaline and acid aqueous electrolytes. Compared to other conventional methods of preparing gallium arsenide films, electrodeposition from aqueous solution has the advantages of low operating and equipment costs, relatively easy control of film properties, and no toxic volatile raw material. The cathodic deposits from an alkaline electrolyte generally were thick, porous, and powdery. With an acid electrolyte, the deposits were thinner and more compact and adherent. The effects of the following operating parameters have been characterized: applied potential, current density, electrolyte composition, cathode material, deposition temperature, pH, additives, and agitation. Secondary ion mass spectroscopy confirmed oxidation states and x-ray diffraction patterns indicated that the as-deposited films were microcrystalline GaAs which became more crystalline on annealing. Mixtures of the deposited elements of gallium and arsenic yielded crystalline gallium arsenide after annealing. Energy dispersive spectroscopy and Auger electron spectroscopy showed that the deposited films contained some oxygen. The source of the oxygen, particularly in the acid electrolytes, is discussed. A mechanistic study confirmed conditions under which arsine is formed and reacts with gallate in the alkaline solution.

Metal-Drug Interactions: Synthesis and Spectroscopic Characteristics, Surface Morphology, and Pharmacological Activity of Ephedrine–HCl Complexes with Mo(V), Nb(V), Ga(III), and Ge(IV)

El-Habeeb,Refat

, p. 2163 - 2169 (2018/12/11)

Four new Mo(V), Nb(V), Ga(III), and Ge(IV) ephedrine complexes, [Mo(Eph)2(Cl)4].Cl, [Nb(Eph)2(Cl)3], [Ga(Eph)2(Cl)3], and [Ge(Eph)2(Cl)2] are synthesized and characterized. Composition and coordination behavior of ephedrine drug towards Mo(V), Nb(V), Ga(III), and Ge(IV) ions are deduced from microanalysis, IR spectra, molar conductance, magnetic and thermal analysis data. These support coordination of the eph ligand in its neutral state. Ephedrine has two powerful chelating sites, OH and NH, that determine its uni- or bidentate mode of action. IR spectra indicate that Mo(V) and Ga(III) coordinate to ephedrine via nitrogen atom of the NH group as a unidentate chelator with six and five coordination geometry, respectively. On the other hand, Eph ligand behaves as a monoanionic bidentate no chelating agent via the NH and deprotonated OH groups in Nb(V) and Ge(IV) complexes. Mo(V) complex demonstrates electrolytic properties, the other complexes are non-electrolytes in DMSO solutions. TG/DTG analysis makes it possible to calculate the number of solvent molecules in and outside the coordination sphere, and estimate stability of the synthesized complexes. The Eph complexes are screened in vitro for antibacterial (Escherichia coli, Pseudomonas aeruginosa, Bacillus subtilis and Staphylococcus aureus) and antifungal (Aspergillus flavus and Candida albicans) activities. Anti-cancer action of the Mo(V) and Ga(III) complexes is assessed against the human hepato cellular carcinoma (HepG-2) tumor cell line (IC50 >1000 μg/mL).

Salt-Free Reduction of Nonprecious Transition-Metal Compounds: Generation of Amorphous Ni Nanoparticles for Catalytic C-C Bond Formation

Yurino, Taiga,Ueda, Yohei,Shimizu, Yoshiki,Tanaka, Shinji,Nishiyama, Haruka,Tsurugi, Hayato,Sato, Kazuhiko,Mashima, Kazushi

supporting information, p. 14437 - 14441 (2016/01/25)

A salt-free procedure for the generation of a wide variety of metal(0) particles, including Fe, Co, Ni, and Cu, was achieved using 2,3,5,6-tetramethyl-1,4-bis(trimethylsilyl)-1,4-diaza-2,5-cyclohexadiene (1), which reduced the corresponding metal precursors under mild conditions. Notably, Ni particles formed in situ from the treatment of Ni(acac)2 (acac=acetylacetonate) with 1 in toluene exhibited significant catalytic activity for reductive C-C bond-forming reactions of aryl halides in the presence of excess amounts of 1. By examination of high-magnification transmission electron microscopy images and electron diffraction patterns, we concluded that amorphous Ni nanoparticles (Ni aNPs) were essential for the high catalytic activity.

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