7440-55-3

Usage

Uses

Used in Semiconductor and LED Production:
Gallium is used as a key material in the production of semiconductors and LEDs due to its unique electronic properties.
Used in Medical Imaging and Nuclear Medicine:
Gallium is used as a contrast agent in medical imaging and as a component in nuclear medicine for diagnostic and therapeutic purposes.
Used in High-Temperature Thermometers:
Gallium is used as a temperature-sensitive material in high-temperature thermometers due to its low melting point.
Used in Solid-State Electronics Manufacturing:
Gallium is used as an alloying agent in the manufacturing of solid-state electronics to improve their performance and reliability.
Used in Pharmaceuticals and Dental Applications:
Gallium is used in some pharmaceuticals and dental applications due to its non-toxic nature.
Used in Solar Energy:
Gallium has potential applications in solar energy, contributing to the development of more efficient solar cells.
Used in Nuclear Reactor Cooling:
Gallium has potential use as a coolant in nuclear reactors, enhancing the safety and efficiency of nuclear power generation.

InChI:InChI=1/Ga

Synthetic route

decamethylsilicocene + Gallium trichloride (13450-90-3) → gallium (7440-55-3) + gallium trichloride-pyridine (1/1) (856588-85-7, 15024-93-8)

Conditions	Yield
In toluene inert atmosphere; soln. of Si-compd. cooled to -80°C, addn. of GaCl3 (equiv. amt.) soln., warming to room temp., Gallium pptn. on standing (3-5 d), filtration of Ga, pptn. on pyridine addn. to filtrate; filtration;	A 98% B 87%

decamethylsilicocene + gallium(III) bromide (13450-88-9) → gallium (7440-55-3) + pyridine; compound with gallium bromide

Conditions	Yield
In toluene inert atmosphere; soln. of Si-compd. cooled to -80°C, addn. of GaBr3 (equiv. amt.) soln., warming to room temp., gallium pptn. on standing (3-5 d), filtration of Ga, pptn. on pyridine addn. to filtrate; filtration;	A 96% B 79%

IMes*GaH3 (311311-59-8) + GaBr3(1,3-dimesitylimidazol-2-ylidene) → gallium (7440-55-3) + GaHBr2(1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene) (1159704-40-1)

Conditions	Yield
In toluene (under Ar, Schlenk); soln. of Ga-complex added dropwise to soln. of Ga-complex in toluene with stirring at room temp., heated to 50°C for36 h; filtered, volatiles removed in vacuo;	A n/a B 71%

gallium(III) trichloride + ephedrine hydrochloride (63991-26-4) → gallium (7440-55-3) + [Ga(ephedrine)2(Cl)3]

Conditions	Yield
With ammonium hydroxide In methanol for 3h; pH=8 - 9; Reflux;	A n/a B 66%

digallium tetrachloride → gallium (7440-55-3)

Conditions	Yield
With 2,3,5,6-tetramethyl-1,4-bis(trimethylsilyl)-1,4-diaza-2,5-cyclo-hexadiene In tetrahydrofuran at 20℃; for 15h; Inert atmosphere;	59%

exo-Li(N,N,N',N'-tetramethylethylenediamine)-1-Li(N,N,N',N'-tetramethylethylenediamine)-2,3-(SiMe3)2-2,3-C2B4H4 + Gallium trichloride (13450-90-3) → gallium (7440-55-3) + 1-Cl-1-(N,N,N',N'-tetramethylethylenediamine)-2,3-(SiMe3)2-closo-1,2,3-GaC2B4H4

Conditions	Yield
In benzene byproducts: LiCl; addn. of soln. of carborane to GaCl3 (C6H6, 0°C), stirring at room temp. overnight; filtration off of LiCl and Ga, concn.; elem. anal.;	A n/a B 51%

[((((Bu(t))NC(H))2)GaI)2] + [LiAs(SiMe3)2*DME] (181886-00-0) → gallium (7440-55-3) + bis(1,4-di-t-butyl-1,4-diazabuta-1,3-diene)gallium (124592-82-1) + [(((Bu(t))NC(H))2)Ga(As(SiMe3)2)I]

Conditions	Yield
In diethyl ether under Ar atm. to soln. Ga complex in Et2O LiAs(SiMe3)2*DME in Et2O (1:2)was added at -78°C over 5 min, soln. was warmed to room temp. an d stirred overnight; volatiles were emoved in vacuo, residue was extd. with hexane, filtered,concd., and cooled to -30°C overnight; elem. anal.;	A n/a B n/a C 33%

lithium tetrahydridogallate + H2Ga(μ-Cl)2GaH2 → gallium (7440-55-3) + Li(1+)*GaH3Cl(1-)=LiGaH3Cl + gallane (13572-93-5)

Conditions	Yield
With octane byproducts: H2; at -30°C in vac. (<1E-4 mm Hg); Gallane condenses as a white solid, elem. anal.;	A n/a B n/a C 5%
With octane In solid byproducts: H2; at -30°C in vac. (<1E-4 mm Hg); Gallane condenses as a white solid, elem. anal.;	A n/a B n/a C 5%

water (7732-18-5) + Gallium trichloride (13450-90-3) → gallium (7440-55-3) + gallium oxide hydroxide

Conditions	Yield
In water byproducts: H(1+); Sonication; Ar atmosphere (1.5 atm); 100 W/cm**2, 20-kHz, room temp., 90 min - 6 h; washing (H2O, 4 times), drying (vac.); detd. by powder X-ray diffraction;	A 1% B n/a

1,1,3,3-tetramethylgyanidine-gallane (1/1) (325774-15-0) → gallium (7440-55-3) + hydrogen (1333-74-0) + N,N,N',N'-tetramethylguanidine (80-70-6)

Conditions	Yield
at 85 - 90℃; Thermodynamic data;

gallium(III) oxide → gallium (7440-55-3)

Conditions	Yield
With filter paper coal In neat (no solvent) annealing;
With hydrogen In neat (no solvent) in H2-stream at red heat;;
With filter paper coal In neat (no solvent) annealing;
With H2 In neat (no solvent) in H2-stream at red heat;;

diborane (19287-45-7) + trimethyl gallium (1445-79-0) → gallium (7440-55-3) + methyl diborane (23777-55-1) + hydrogen (1333-74-0)

Conditions	Yield
at room temp. with excess of B2H6;
at room temp. with excess of B2H6;

gallium arsenide → gallium (7440-55-3) + arsenic (23878-46-8)

Conditions	Yield
In solid at 580-650°C; UPS; Auger spect.;

gallium arsenide → gallium (7440-55-3)

Conditions	Yield
In neat (no solvent) heated at 585 - 750 °C for 3 - 8 min under vac.;

trimethyl gallium (1445-79-0) → gallium (7440-55-3)

Conditions	Yield
In gaseous matrix Kinetics; Irradiation (UV/VIS); photolysis at 403.3 nm; KrF laser; carrier gas H2, D2 or CH4; monitoring fluorescence at 417.2 nm;
In neat (no solvent) deposition of Ga droplets on heated Si substrate (480 °C) at moleflow of GaMe3 of 2.2E-5 mol/min for 30 s;
In neat (no solvent) thermal decompn. on heated Cu or GaAs surfaces; detn. by MPI/MS;

trimethyl gallium (1445-79-0) → gallium (7440-55-3) + monomethyl gallium (99601-83-9) + dimethylgallium (106693-86-1)

Conditions	Yield
In gas byproducts: CH3, C2H6; Irradiation (UV/VIS); laser photolysis;
In gas byproducts: C2H6, CH3; Irradiation (UV/VIS); photolysis (190-310 nm); studied by laser mass spectrometry and UV absorption spectrometry;

gallium(III) + cadmium (7440-43-9) → gallium (7440-55-3)

Conditions	Yield
	0%

gallium(III) + zinc (7440-66-6) → gallium (7440-55-3)

Conditions	Yield
	0%

gallium nitride + oxygen (80937-33-3) + silicon (7440-21-3) → gallium(III) oxide + gallium (7440-55-3) + silica gel (112926-00-8, 7631-86-9)

Conditions	Yield
In neat (no solvent) High Pressure; under Ar flow; Si wafer placed on Al plate; Ga droplets (obtained from GaN at 1150°C) transferred by Ar contg. O2 (7.8 Torr partial pressure) and deposited onto Si wafer; heated at 1150°C (400 Torr) for5 h; detd. by scanning and transmission electron microscopy, and energy dispersive X-ray spectroscopy;	A n/a B 0% C 0%

Gallium trichloride (13450-90-3) → gallium (7440-55-3)

Conditions	Yield
With arsenic(III) trioxide In water Electrochem. Process; electrodeposition, pH 14 (silicon substrate, -2.99 V vs Ag/AgCl,lead substrate, -1.73 V vs Ag/AgCl ); X-ray diffraction, Auger electron spectroscopy;
With potassium hydroxide In potassium hydroxide Electrolysis;
With LiBH(CH2CH3)3 In tetrahydrofuran byproducts: LiCl; (Ar); addn. of dioctylether to THF soln. of Superhydride, stirring for 1.5 at 90°C in vac., addn. of gallium compd.; centrifugation, washing with THF, drying in vac. for 20 min;

gallium + arsenic → gallium arsenide

Conditions	Yield
In neat (no solvent) Ga, As evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 140h;	100%
With iodine In neat (no solvent) stoichiometric amts. of Ga and As heated at 1000°C for 5 days at the presence of a small amts. of iodine; identified by X-ray diffraction;
In gas gas phase reaction of Ga and As vapour at 1E-10 Torr;

gallium (7440-55-3) + germanium (7440-56-4) + antimony (7440-36-0) → Ge#dotGa#dotSb

Conditions	Yield
In neat (no solvent) Ge, Ga and Sb placed in evacuated (1E-2 Pa), sealed quartz ampoules, annealed (800°C, 1400 h); single phase (microstructural analysis), samples prepared with total of 0.25 at.% dopant (Ge = 99.75 at.%) and others with total dopant content of 5 E19 cm-3, also Ge:Sb = 3:1, 1:1 and 1:3;	100%

gallium (7440-55-3) + lanthanum (7439-91-0) + lanthanum(III) chloride (10099-58-8) → La10Cl4Ga5

Conditions	Yield
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (900°C, 20 d);	100%

gallium (7440-55-3) + germanium (7440-56-4) → gallium doped germanium

Conditions	Yield
In neat (no solvent) Ge and Ga placed in evacuated (1E-2 Pa), sealed quartz ampoules, annealed (800°C, 1400 h); single phase (microstructural analysis), dopant content of 5 E19 cm-3;	100%

gallium (7440-55-3) + antimony (7440-36-0) → galium antimonide

Conditions	Yield
In neat (no solvent) Ga, Sb evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 140h;	100%
melting in a quartz crucible in flowing hydrogen (purified over Pd, flow rate 70 ml/min); for compensation of evapn. of Sb, 0.1% excess Sb was applied;;
In neat (no solvent) Sb/Ga flux ratio was approx. 8.5, GaAs(001) as substrate, mol. beam epitaxy;

gallium (7440-55-3) + lanthanum (7439-91-0) + lanthanum(III) bromide (13536-79-3) → La3Br3Ga

Conditions	Yield
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (850°C, 20 d);	100%

gallium (7440-55-3) + lanthanum (7439-91-0) + lanthanum(III) bromide (13536-79-3) → La10Br4Ga5

Conditions	Yield
In neat (no solvent) stoich. mixt. sealed in Ta tubes under Ar; Ta tubes sealed in silica ampoules (1E-2 mbar); heated (950°C, 33 d);	100%

gallium (7440-55-3) + cerium(III) bromide (14457-87-5) → Ce4Br2Ga5

Conditions	Yield
In neat (no solvent, solid phase) all manipulations under Ar atm.; stoich. mixt. of compds. sealed in Ta tubes then tubes sealed inside silica ampoules under vac. (ca. 1E-2 mbar), heated at 930°C for 36 d;	100%

gallium (7440-55-3) + ethyl iodide (75-03-6) → 2Ga(3+)*3I(1-)*3C2H5(1-)

Conditions	Yield
With gallium(III) trichloride for 5h; Inert atmosphere; Reflux;	100%

gallium (7440-55-3) + methyl iodide (74-88-4) → 2Ga(3+)*3I(1-)*3CH3(1-)

Conditions	Yield
With gallium(III) trichloride for 2h; Inert atmosphere; Reflux;	100%

gallium (7440-55-3) + iodine (7553-56-2) → (gallium triiodide)2 + Ga(1+)*GaI4(1-)=Ga2I4 (17845-89-5) + 2Ga(1+)*Ga2I6(2-) = Ga2(Ga2I6)

Conditions	Yield
In toluene at 30℃; Glovebox; Inert atmosphere; Sonication;	A n/a B 100% C n/a

gallium (7440-55-3) + chlorine (7782-50-5) → Gallium trichloride (13450-90-3)

Conditions	Yield
In melt 5 mol% excess of gaseous chlorine passed through metal gallium melt;	99%
excess Cl2;;
mixt. heating (two-section glass tube, 200-250°C); vac. sublimation (water pump, ca. 250°C);

gallium (7440-55-3) + germanium (7440-56-4) + yttrium → Y3Ga9Ge

Conditions	Yield
In melt mixing of Y, Ga and Ge in ratio Y:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5 h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;	99%

gallium (7440-55-3) + germanium (7440-56-4) + ytterbium → Yb3Ga9Ge

Conditions	Yield
In melt mixing of Yb, Ga and Ge in ratio Yb:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;	99%

gallium (7440-55-3) + germanium (7440-56-4) + samarium (7440-19-9) → Sm3Ga9Ge

Conditions	Yield
In melt mixing of Sm, Ga and Ge in ratio Sm:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether;	99%

erbium + gallium (7440-55-3) + ammonia (7664-41-7) → erbium-implanted gallium nitride

Conditions	Yield
In melt Ga mixed with 1 mol% Er in presence of wetting agent Bi in quartz tube placed in furnace, after purging with Ar for 1 h, heating under Ar flow at 950-1050 °C, gas switched from Ar to NH3, temp. held for 3-5 h;	99%
In gas Ga and Er were deposited on sapphire substrate at 700°C under ammonia flow;

gallium (7440-55-3) + triethylarsine diiodide (81795-88-2) → [GaI2(As(C2H5)3)]2 (182921-15-9)

Conditions	Yield
In not given recrystn. (Et2O);	99%

gallium (7440-55-3) + methanesulfonic acid (75-75-2) → galium(III) mesylate

Conditions	Yield
In nitromethane at 20℃; for 1.5h; Sonication;	99%

gallium (7440-55-3) + water (7732-18-5) → gallium(III) oxide

Conditions	Yield
Stage #1: gallium; water With hydrogenchloride; potassium oxalate; urea at 20℃; for 0.5h; Stage #2: at 179.84℃; for 3h; Reagent/catalyst; Autoclave;	99%

gallium (7440-55-3) + chlorine (7782-50-5) → gallium(III) trichloride

Conditions	Yield
Heating;	99%
In neat (no solvent)

gallium (7440-55-3) + aluminium (7429-90-5) → aluminum gallium

Conditions	Yield
In neat (no solvent) Al and Ga metals were heated in sealed quartz tube to 700° and then cooled to room temp.;	98%
In neat (no solvent)
In neat (no solvent)
In neat (no solvent) melting Ga and Al in a porcelain tube in vac.;;

gallium (7440-55-3) + 3,5-di-tert-butyl-o-benzoquinone (3383-21-9) → gallium(III) tris(3,5-di-tert-butyl-1,2-semibenzoquinonate)

Conditions	Yield
In toluene N2 atmosphere; refluxing (24 h); removal of solvent; elem. anal.;	98%

gallium (7440-55-3) + 9,10-phenanthrenequinone (84-11-7) → gallium(III) tris(9,10-phenanthrenesemiquinonate)

Conditions	Yield
In toluene 1:3 mixt. refluxed in toluene for 18 h (until metal was completely dissolved); filtration, evapd. to dryness, elem. anal.;	98%

gallium (7440-55-3) + 2,6-bis[1-[(2,6-di(iso-propyl)phenyl)imino]-benzyl]pyridine (301658-93-5) + iodine (7553-56-2) + toluene (108-88-3) → [GaI2(2,6-bis[1-[(2,5-di(isopropyl)phenyl)imino]benzyl]pyridine)GaI4]3*toluene

Conditions	Yield
In toluene Sonication; (under N2); Ga and I2 added to soln. of ligand in toluene, sealed, sonicated for 3 h, stirred overnight; filtered, washed with hexane, dried under vac.;	98%

gallium (7440-55-3) + methyl aluminium sesquichloride → trimethylaluminum (75-24-1) + trimethyl gallium (1445-79-0)

Conditions	Yield
With methylene chloride; sodium at 40 - 50℃; under 375.038 Torr; Inert atmosphere; Flow reactor;	A 93.7% B 96.8%

Upstream product

• 7732-18-5 water 
• 13450-90-3 Gallium trichloride 
• 19287-45-7 diborane 
• 1445-79-0 trimethyl gallium 
• 22537-33-3 gallium(III) 
• 7440-43-9 cadmium 
• 7440-66-6 zinc 
• 80937-33-3 oxygen 
• 7440-21-3 silicon 
• 86901-19-1 magnesium-anthracene-(THF)3 
• 29868-77-7 tri(n-propyl)gallium 
• 15677-44-8 tributylgallium 
• 18897-61-5 Ga2Br4, β, high temperature 
• 18897-61-5 Ga2Br4, α, low temperature 

Downstream Products

• 13450-91-4 gallium(III) iodide 
• 17764-59-9 GaI₃*PPh₃ 
• 897053-37-1 Ph₃Sb-GaPhI₂ 
• 13450-88-9 gallium(III) bromide 
• 13450-90-3 Gallium trichloride 
• 7786-30-3 magnesium chloride 
• 1445-79-0 trimethyl gallium 
• 12411-25-5 Ga_0.66Mg_0.34 
• 12411-25-5 Ga_0.34Mg_0.66 
• 12411-25-5 Ga_0.28Mg_0.72 
• 12411-25-5 Ga_0.50Mg_0.50 
• 12411-25-5 Ga₀₇₁₅Mg₀₂₈₅ 
• 56668-59-8 gallium-nickel powder 
• 1333-74-0 hydrogen 

Relevant academic research and scientific papers

A lanthanide-gallium complex stabilized by the N-heterocyclic carbene group

The complex [Nd(L′){Ga(NArCH)2}(N″)(THF)], which exhibits the first f-element-gallium bond, is formed from the reaction between the N-heterocyclic carbene-supported neodymium complex [Nd(L′)(N″)(I)] (L′ = ButNCH2CH2{C(NCSiMe3 CHNBut)}; N″ = N(SiMe3)2) and the anionic gallium(I) heterocycle [Ga(NArCH)2][K(tmeda)] (Ar = 2,6-Pri2C6H3). The Nd-Ga bond energy is calculated to be 386 kJ mol-1. Copyright

ELECTROLYTIC RECOVERY OF GALLIUM FROM DILUTE SOLUTIONS EMPLOYING MICROELECTRODES.

The recovery of gallium from dilute solutions is known to be slow and inefficient due to competing hydrogen evolution and the limitations of mass transport. Methods used to improve the process include pulse plating, inhibition of hydrogen evoluation by su

Bis-NHC Aluminium and Gallium Dihydride Cations [(NHC)2EH2]+ (E = Al, Ga)

The NHC alane and gallane adducts (NHC)·AlH2I (NHC = Me2ImMe 7, iPr2Im 8, iPr2ImMe 9) and (NHC)·GaH2I (NHC = Me2ImMe 10, iPr2ImMe 11,

Kinetics and mechanism of thermal decomposition of GaN

A scheme of dissociative evaporation of GaN with the partial evolution of nitrogen in the form of free atoms has been invoked to interpret the decomposition mechanism of GaN in vacuum or inert gas atmosphere. A critical analysis of literature data and their comparison with theoretical calculations has shown that the main kinetic characteristics of decomposition, including the absolute decomposition rate and activation energy are in full agreement with the reaction: GaN(s) → Ga(g)+0.5N+0.25N2. Condensation of the gallium vapor in the reaction zone and partial transport of condensation energy to GaN account for the features which are typical of many solid-state reactions and manifest themselves in the appearance of induction and acceleration periods in the course of the process. The low temperature decomposition of GaN in H2 according to the equilibrium reaction GaN(s)+ 1.5H2=Ga(g)+NH3 is supported by a good agreement of experimental and calculated activation energies and by the strong inhibition effect of NH3 on the GaN decomposition. As expected, condensation of Ga vapor in the Ga(l)/GaN(s) interface accelerates the reduction of GaN by H2 several hundred times. (C) 2000 Elsevier Science B.V.

Mono- and digallane complexes of a tridentate amido-diamine ligand

Bis(2-dimethylaminoethyl)amido gallane, H2GaN(CH 2CH2-NMe2)2, that melts at 27 °C and remains stable upon heating at 55 °C for two days, was synthesized either from the reaction of the quinuclidine adduct of monochlorogallane with the lithium salt of the corresponding amine, or from the reaction of trimethylamine gallane and the amine; the latter affords an unusual co-product with both GaH2 and GaH3 bonded to the same amido nitrogen. The Royal Society of Chemistry 2005.

Gallane complexes with amido-amine ligands

Gallane complexes bearing amido-amine ligands -N(R)CH2CMe2CH2NMe2 [R = H or SiMe3 (TMS)], {H2Ga-[N(H)CH2CMe2CH2 NMe2]}2, 1, H2/s

Sonochemical hydrolysis of Ga3+ ions: Synthesis of scroll-like cylindrical nanoparticles of gallium oxide hydroxide

The sonochemical reaction of an aqueous solution of GaCl3 led to the formation of gallium oxide hydroxide rolled up in a scroll-like layered structure to give cylinders 80-120 nm in diameter and 500-600 nm in length. Small amounts of metallic Ga were incorporated with these tubes. A mechanism for this reaction has been suggested where the reaction takes place in a shell surrounding the collapsing bubble.

In situ STM studies of Ga electrodeposition from GaCl3 in the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide

In the present paper the electrodeposition of Ga on Au(1 1 1) from 0.5 mol L-1 GaCl3 in the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide, [Py1,4]TFSA, has been investig

Electrodeposited gallium alloy thin films synthesized by solid state reactions for CIGS solar cell

The solid-state reactions of electroplated gallium thin films with copper, gold and molybdenum were investigated using XRD, SIMS, TEMEDS and linear strip voltammetry. Due to the low melting temperature of gallium metal, the activation energy for gallium diffusion is lower than the other metals used. Hence Ga diffuses faster and reacts to form alloy phases with the other metals investigated. In a thin film stack of Ga with another metals (Me), (Me = Cu, Au and Mo), equilibrium compounds are formed, which compounds form depends on the relative composition and diffusion time. If there is excess Ga, or excess Me, it can further react with the metastable compounds to form an equilibrium compound. In addition, TaN was found to act as an effective barrier layer to gallium diffusion.

Determination of lanthanides (La, Ce, Nd, Sm) and other elements in metallic gallium by instrumental neutron activation analysis

This paper reports the analytical results of lanthanides and other elements in pure elemental gallium. The analyses were performed by instrumental neutron activation analysis (INAA) at the nuclear reactor IEA-R1, IPEN, S?o Paulo. INAA has the advantage of being a multi-elemental and non-destructive analytical method. After irradiation, the samples were set aside for some days before running high resolution gamma spectrometry with a hyper-pure Ge detector. Gallium was recovered from the Bayer process alkaline leach solution, named by local aluminum industry as 'weak soda', (spent liquor) with a concentration of about 150 mg l-1. As a first step, gallium was recovered from the 'weak soda' and enriched using a complexing ion-exchanger of the polyamidoxime type specially synthesized in the country for this purpose. After washing the column with water and then with pure sodium hydroxide to remove the interstitial 'spent liquor', gallium was eluted from the resin. The eluted gallium solution was made to 4 mol l-1 in NaOH and subject to electrolysis. The metal was then collected from the electrodes and given a final purification step by dilute inorganic acid stripping. The most representative lanthanide elements found and analyzed in the metallic gallium were La, Ce, Nd and Sm. One of the most recent samples exhibited the following results: (μg g-1) La (16.1), Ce (15.5), Nd (11.8) and Sm (3.6). Besides the lanthanides, the following elements were also analyzed: U, Cr, Fe, Co, Zn, Mo, Se, Sb and Ba. The results showed that the metal obtained is highly pure. The purity can be enhanced by stripping the metallic gallium with a dilute mineral acid.