Chemical Property of 1,10-Phenanthrolinedisulfonic acid, 4,7-diphenyl-, disodium salt
Chemical Property:
- Melting Point:300 °C
- Boiling Point:°Cat760mmHg
- Flash Point:°C
- PSA：156.94000
- Density:g/cm3
- LogP:6.08680
- Storage Temp.:2-8°C
- Solubility.:H2O: soluble
- Hydrogen Bond Donor Count:0
- Hydrogen Bond Acceptor Count:8
- Rotatable Bond Count:2
- Exact Mass:536.00886708
- Heavy Atom Count:36
- Complexity:812
- Purity/Quality:
-
98% *data from raw suppliers
Bathophenanthrolinedisulfonic Acid Disodium Salt Hydrate[for Determination of Ferrous Ion] *data from reagent suppliers
Safty Information:
- Pictogram(s):
Xi
- Hazard Codes:Xi,C
- Statements:
36/38-36/37/38-36-52/53-35-67
- Safety Statements:
26-36-24/25-37/39-61-45-36/37/39
- MSDS Files:
-
SDS file from LookChem
Useful:
- Canonical SMILES:C1=CC(=CC=C1C2=C3C=CC4=C(C=CN=C4C3=NC=C2)C5=CC=C(C=C5)S(=O)(=O)[O-])S(=O)(=O)[O-].[Na+].[Na+]
-
Uses
Used for pretreatment of planar silicon devices when plating with Nickel plating solution products 44069 and 44070. Use of Buffer HF improved:Buffer HF improved dissolves silica films (both thermally grown and silane SiO2) produced on the surfaces of silicon and exposed by photolithography. It also is capable of dissolving doped silica films such as phosphosilica and borosilica glasses as formed in semiconductor processing. The overall chemical reaction is: 4HF + SiO2 SiF4 + 2H2OFor trouble-free operation Buffer HF improved is recommended in the new technologies for manufacture of semiconductor planar and mesa devices. It is compatible with both negative and positive photoresists. Excellent results with good reproducibility are simple to achieve without undercutting marked oxides, surface staining or device degradation by metallic impurities. Use of Buffer HF improved:Buffer HF improved dissolves silica films (both thermally grown and silane SiO2) produced on the surfaces of silicon and exposed by photolithography. It also is capable of dissolving doped silica films such as phosphosilica and borosilica glasses as formed in semiconductor processing. The overall chemical reaction is: 4HF + SiO2 SiF4 + 2H2OFor trouble-free operation Buffer HF improved is recommended in the new technologies for manufacture of semiconductor planar and mesa devices. It is compatible with both negative and positive photoresists. Excellent results with good reproducibility are simple to achieve without undercutting marked oxides, surface staining or device degradation by metallic impurities.
