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(Zn(C5NCH3C2H4COOCH3)4H2(C6H4C2)2)2(Si(CH3)3)2

Base Information
  • Chemical Name:(Zn(C5NCH3C2H4COOCH3)4H2(C6H4C2)2)2(Si(CH3)3)2
  • CAS No.:169967-48-0
  • Molecular Formula:C118H118N8O16Si2Zn2
  • Molecular Weight:2091.23
  • Hs Code.:
(Zn(C<sub>5</sub>NCH<sub>3</sub>C<sub>2</sub>H<sub>4</sub>COOCH<sub>3</sub>)4H<sub>2</sub>(C<sub>6</sub>H<sub>4</sub>C<sub>2</sub>)2)2(Si(CH<sub>3</sub>)3)2

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Chemical Property of (Zn(C5NCH3C2H4COOCH3)4H2(C6H4C2)2)2(Si(CH3)3)2
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Technology Process of (Zn(C5NCH3C2H4COOCH3)4H2(C6H4C2)2)2(Si(CH3)3)2

There total 2 articles about (Zn(C5NCH3C2H4COOCH3)4H2(C6H4C2)2)2(Si(CH3)3)2 which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:
Guidance literature:
With tetrabutyl ammonium fluoride; In tetrahydrofuran; dichloromethane; Zn-complex soln. (CH2Cl2) titration with TBAF soln. (THF) until about 50% of SiMe3-groups removed, soln. stirring with CaCl2 for 10 min (excess fluoride removal), washing (water), solvent evapn., drying; residue flash chromy. (SiO2, CHCl3/CH2Cl2 1:5.7 v/v), 3rd band sepn., solvent removal, TMEDA addn. to residue soln. and CuCl in CH2Cl2, mixt. washing after 30 min (water), evapn., flash column chromy. (SiO2, CHCl3/CH2Cl2 1:4 and 1:2.3; elem. anal.;
Guidance literature:
With N,N,N,N,-tetramethylethylenediamine; tetrabutyl ammonium fluoride; copper(l) chloride; In chloroform; dry air;
Guidance literature:
With N,N,N,N,-tetramethylethylenediamine; tetrabutyl ammonium fluoride; In tetrahydrofuran; dichloromethane; chloroform; Zn-complex soln. (CHCl3) degassing, satn. with Ar, TBAF soln. (THF) addn. in 4 portions at 30 min intervals, intermediate reflux, a few CaCl2 addn., washing (water), evapn., residue vac. drying, two equal portions dissoln. (CH2Cl2), CuCl and Me2-butynol; addn., TMEDA addn., mixt. washing (water) after 10 min; flash column chromy., first fraction (CHCl3/MeOH 1:1.9) removal, 2nd and 3rd fraction sepn., recrystn. (CHCl3/MeOH);
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