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Germanium nitride

Base Information
  • Chemical Name:Germanium nitride
  • CAS No.:12065-36-0
  • Molecular Formula:Ge3N4
  • Molecular Weight:273.95
  • Hs Code.:
  • Wikidata:Q4321613
  • Wikipedia:Germanium_nitride
  • Mol file:12065-36-0.mol
Germanium nitride

Synonyms:Germanium nitride;12065-36-0;Germanium Tetranitride;Germanium(III) nitride;Germanium nitride (Ge3N4);BIXHRBFZLLFBFL-UHFFFAOYSA-N;MFCD00016118;Q4321613;Germanium(III) nitride, >=99.99% trace metals basis

Suppliers and Price of Germanium nitride
Supply Marketing:
Business phase:
The product has achieved commercial mass production*data from LookChem market partment
Manufacturers and distributors:
  • Manufacture/Brand
  • Chemicals and raw materials
  • Packaging
  • price
  • Sigma-Aldrich
  • Germanium(III) nitride ≥99.99% trace metals basis
  • 5g
  • $ 227.00
Total 16 raw suppliers
Chemical Property of Germanium nitride
Chemical Property:
  • Melting Point:>850 °C (dec.)(lit.)
     
  • PSA:74.61000 
  • Density:5.35 g/mL at 25 °C(lit.)  
  • LogP:-0.74086 
  • Water Solubility.:insoluble H2O; does not react with most mineral acids, aqua regia or caustic solutions [KIR78] [CRC10] 
  • Hydrogen Bond Donor Count:0
  • Hydrogen Bond Acceptor Count:4
  • Rotatable Bond Count:0
  • Exact Mass:271.779798
  • Heavy Atom Count:7
  • Complexity:151
Purity/Quality:

>=99.99% *data from raw suppliers

Germanium(III) nitride ≥99.99% trace metals basis *data from reagent suppliers

Safty Information:
  • Pictogram(s):  
  • Hazard Codes:Xi 
  • Statements: 36/37/38 
  • Safety Statements: 26-36 
MSDS Files:

SDS file from LookChem

Total 1 MSDS from other Authors

Useful:
  • Canonical SMILES:N#[Ge]N([Ge]#N)[Ge]#N
  • Description Germanium nitride (Ge3N4) does not occur in nature as a compound. It can be produced by reacting germanium with ammonia. It can be applied as a passivation layers to germanium-based radiation detectors. Germanium Nitride is reported to be used as a water-insoluble gate dielectric film in metal oxide semiconductor field effect transistor with germanium channel.2 It is used in etchant formulation, which was originally developed for silicon oxynitride.3
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