12050-27-0 Usage
Description
Cadmium antimonide, with the chemical formula Cd3Sb2, is a semiconductor compound composed of cadmium and antimony. It features a direct bandgap and is known for its narrow bandgap energy, which makes it highly effective in detecting infrared radiation. The material also exhibits high electron mobility, positioning it as a potential candidate for high-performance electronic and photonic devices. However, due to its toxicity, it requires careful handling to avoid harmful exposure.
Uses
Used in Infrared Detection Applications:
Cadmium antimonide is utilized as a material in infrared detectors due to its narrow bandgap energy, which allows for the efficient detection of infrared radiation.
Used in Optoelectronic Devices:
In the optoelectronics industry, cadmium antimonide serves as a key component in various devices, capitalizing on its semiconductor properties and high electron mobility to enhance performance and efficiency.
Used in High-Performance Electronic Devices:
The high electron mobility of cadmium antimonide makes it suitable for use in high-performance electronic devices, where quick and efficient electron transport is crucial for the device's operation.
Used in Photonic Devices:
Cadmium antimonide's properties also make it a valuable material in photonic devices, where its direct bandgap and semiconductor nature contribute to the manipulation and control of light at the photon level.
Check Digit Verification of cas no
The CAS Registry Mumber 12050-27-0 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,5 and 0 respectively; the second part has 2 digits, 2 and 7 respectively.
Calculate Digit Verification of CAS Registry Number 12050-27:
(7*1)+(6*2)+(5*0)+(4*5)+(3*0)+(2*2)+(1*7)=50
50 % 10 = 0
So 12050-27-0 is a valid CAS Registry Number.
12050-27-0Relevant articles and documents
Moessbauer Emission Spectra of 119Sn in Binary Compounds of Antimony and Tellurium
Ambe, Shizuko,Ambe, Fumitoshi
, p. 1935 - 1940 (1995)
The Moessbauer emission spectra of defect 119Sn atoms arising from 119Sb and 119mTe were measured in GaSb, InSb, In2Te3, ZnSb, CdSb, CdTe, and Ag2Te.The lattice sites of defect 119Sn atoms in these binary compounds were determined on the basis of the obta
Preparation and Application of Optimized Cadmium Antimonide Materials
Ashcheulov,Voronka,Marenkin,Rarenko
, p. 920 - 929 (2008/10/08)
The potentialities of optical, photoelectric, anisotropic thermoelectric, and optothermoelectric cadmium antimonide materials are considered. We describe designs of apparatuses, physicochemical features of preparation procedures, approaches used for optimization, and properties of particular materials. Cadmium antimonide materials find many practical applications in new optical, thermometric, and other instruments, devices, and components.
