100103-39-7Relevant academic research and scientific papers
Octagallane (tBu3Si)6Ga8 and its reduction to (tBu3Si)6Ga82- - On the existence of isomeric gallium clusters
Wiberg, Nils,Blank, Thomas,Noeth, Heinrich,Suter, Max,Warchhold, Markus
, p. 929 - 934 (2002)
Thermolysis of the trigallanyl radical R*4Ga3 in heptane at 60 °C leads to the dark blue octagallane R*6Ga8 (R* = supersilyl SitBu3), as well as the digallanyl radical R*3Ga2 and the tetrahedro-tetragallane R*4Ga4. In addition, supersilyl radicals R* are formed which stabilize themselves either by dimerization or by addition of hydrogen atoms. R*6Ga8 can be reduced in THF with NaC10H8 to the dark-red octagallanediide Na2Ga8R*6·2THF. According to an X-ray structure analysis of R*6Ga8 and R*6Ga82- one finds that the Ga atoms of four R*Ga moieties, together with two naked Ga atoms, occupy the corners of a distorted octahedron; the naked Ga atoms themselves are located, along with Ga atoms of two further R*Ga moieties, at the corners of a distorted square. The reduction of R*6Ga8 leads only to a negligible shortening of the Ga-Ga distances from 2.64 to 2.61 A (mean values) in R*6Ga82-. Both the octagallanes possess Ga8 frameworks previously unknown for group 13 clusters. They are isomeric to the recently described Ga8 framework of the octagallane Tsi6Ga8 [Tsi = trisyl C(SiMe3)3]. Hence, not only boron but also the heavier group 13 atoms form isomeric clusters.
Supersilylsilanes R*SiX3: Syntheses, characterization and structures; steric and van-der-Waals effects of substituents X [1]
Wiberg, Nils,Niedermayer, Wolfgang,No?th, Heinrich,Knizek, Jo?rg,Ponikwar, Werner,Polborn, Kurt
, p. 389 - 405 (2007/10/03)
Supersilylsilanes R*SiX3 (R* = supersilyl = SitBu3; X = H, Me, tBu, Ph, SiMe3, F, Cl, Br, I, OMe, OSO2CF3) are prepared (i) by reactions of supersilylhalosilanes with supersilyl sodium NaR* (Hal/R* ex
