Welcome to LookChem.com Sign In|Join Free

CAS

  • or

10097-28-6

Post Buying Request

10097-28-6 Suppliers

Recommended suppliersmore

  • Product
  • FOB Price
  • Min.Order
  • Supply Ability
  • Supplier
  • Contact Supplier

10097-28-6 Usage

Chemical Properties

Different sources of media describe the Chemical Properties of 10097-28-6 differently. You can refer to the following data:
1. brown or black chunks or powder
2. Silicon monoxide (SiO) is another oxide of silicon, used rarely in silicon processing but quite often in thin film, hybrid Ie manufacture. It is useful there because no silicon is available for in situ growth of the dioxide, and it is deposited easily by physical vapor deposition, a process quite similar to the vacuum deposition of aluminum described. Usually the condensed oxide is nonstoichiometric, being a mixture of SiO, Si02, and Si; often, it is designated SiOx .The value of x, which ranges between 1 and 2, is influenced by the deposition conditions. The SiO source material is prepared by heating Si02 with Si, carbon, and hydrogen, or a hydrocarbon, to reduce the dioxide to the monoxide. Reduction takes place at roughly 1000°C, and SiO is formed in the vapor phase. This temperature is much too low to produce a significant vapor pressure of Si02, so the two oxides may be separated. The monoxide vapor is condensed out and subsequently powdered. This material, which is suitable for evaporation, is available commercially and need not be prepared by the IC manufacturer.

Uses

Different sources of media describe the Uses of 10097-28-6 differently. You can refer to the following data:
1. Silicon monoxide (SiO) is a commonly used material for a wide variety of applications with the emphasis on IR multilayer coatings and adhesion promotion. SiO sublimes and should preferably be evaporated from resistance heated boats. AREAS OF APPLICATION Multilayer coatings especially for the IR, but also the VIS range Adhesion promoter (VIS, NIR) Electronics: dielectric, insulating and protective layers Design: iridescent coatings, colored metallically reflecting coatings e.g. on sun glasses Web coating: barrier layers on polymer films
2. Silicon(II) oxide sputtering target coatings are used for optical applications in reflectors, flood lamps, mirrors, jewelry, and other products. The coatings can reduce reflection in the near infrared range or act as interference layers. It is used in thin-film capacitors, hybrid circuits, semiconductor components and other electronic applications.
3. To form thin surface films for protection of alu- minum coatings, optical parts, mirrors, dielectrics, or insulators.

Check Digit Verification of cas no

The CAS Registry Mumber 10097-28-6 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,0,0,9 and 7 respectively; the second part has 2 digits, 2 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 10097-28:
(7*1)+(6*0)+(5*0)+(4*9)+(3*7)+(2*2)+(1*8)=76
76 % 10 = 6
So 10097-28-6 is a valid CAS Registry Number.
InChI:InChI=1/OSi/c1-2/q+2

10097-28-6 Well-known Company Product Price

  • Brand
  • (Code)Product description
  • CAS number
  • Packaging
  • Price
  • Detail
  • Alfa Aesar

  • (41093)  Silicon(II) oxide sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.250in) thick, 99.9% (metals basis)   

  • 10097-28-6

  • 1each

  • 9715.0CNY

  • Detail
  • Alfa Aesar

  • (36347)  Silicon(II) oxide, 99.99% (metals basis)   

  • 10097-28-6

  • 25g

  • 1494.0CNY

  • Detail
  • Alfa Aesar

  • (36347)  Silicon(II) oxide, 99.99% (metals basis)   

  • 10097-28-6

  • 100g

  • 4322.0CNY

  • Detail
  • Alfa Aesar

  • (41711)  Silicon(II) oxide, 99.9% (metals basis)   

  • 10097-28-6

  • 100g

  • 762.0CNY

  • Detail
  • Alfa Aesar

  • (41711)  Silicon(II) oxide, 99.9% (metals basis)   

  • 10097-28-6

  • 500g

  • 3810.0CNY

  • Detail
  • Alfa Aesar

  • (41710)  Silicon(II) oxide, 99.9% (metals basis)   

  • 10097-28-6

  • 100g

  • 1195.0CNY

  • Detail
  • Alfa Aesar

  • (41710)  Silicon(II) oxide, 99.9% (metals basis)   

  • 10097-28-6

  • 500g

  • 5077.0CNY

  • Detail
  • Alfa Aesar

  • (88292)  Silicon(II) oxide, Optical Grade, 99.5% (metals basis)   

  • 10097-28-6

  • 50g

  • 565.0CNY

  • Detail
  • Alfa Aesar

  • (88292)  Silicon(II) oxide, Optical Grade, 99.5% (metals basis)   

  • 10097-28-6

  • 250g

  • 1982.0CNY

  • Detail
  • Alfa Aesar

  • (89829)  Silicon(II) oxide, Optical Grade, 99.7% (metals basis)   

  • 10097-28-6

  • 50g

  • 360.0CNY

  • Detail
  • Alfa Aesar

  • (89829)  Silicon(II) oxide, Optical Grade, 99.7% (metals basis)   

  • 10097-28-6

  • 250g

  • 1282.0CNY

  • Detail
  • Alfa Aesar

  • (89430)  Silicon(II) oxide, Optical Grade, 99.8% (metals basis)   

  • 10097-28-6

  • 50g

  • 1189.0CNY

  • Detail

10097-28-6SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 12, 2017

Revision Date: Aug 12, 2017

1.Identification

1.1 GHS Product identifier

Product name silicon monoxide

1.2 Other means of identification

Product number -
Other names Silicon oxide

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:10097-28-6 SDS

10097-28-6Synthetic route

silicon
7440-21-3

silicon

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
With O2 In neat (no solvent) O2 stream (0.02 mmol/h) passing over Si heated to 1200°C in Al furnace;
nitrogen(II) oxide
10102-43-9

nitrogen(II) oxide

silicon
7440-21-3

silicon

A

silicon monoxide
10097-28-6

silicon monoxide

B

nitrogen
7727-37-9

nitrogen

Conditions
ConditionsYield
investigation of reaction of NO with Si(111) and (100) surfaces between1220-1390°C and for NO-pressures of 6E-6 to 2E-4Torr: formation of SiO and N2 at high substrate temp. and low NO pressure;; optical and scanning electron microscopy;;
nitrogen(II) oxide
10102-43-9

nitrogen(II) oxide

silicon
7440-21-3

silicon

A

silicon monoxide
10097-28-6

silicon monoxide

B

nitrogen

nitrogen

Conditions
ConditionsYield
In gaseous matrix Kinetics; in Ar, at 2000 K;
oxygen
80937-33-3

oxygen

silicon
7440-21-3

silicon

A

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
In gaseous matrix laser-abladed Si co-deposited with O2 in excess argon;
Si23(1+)

Si23(1+)

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
With oxygen In gaseous matrix Kinetics; byproducts: Si21(1+); react. of Si cluster with O2 in Ne matrix in the temp. range of 228-434 K; detected by quadrupole MAS;
Si13(1+)

Si13(1+)

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
With oxygen In gaseous matrix Kinetics; byproducts: Si11(1+); react. of Si cluster with O2 in Ne matrix in the temp. range of 228-434 K; detected by quadrupole MAS;
silicon
7440-21-3

silicon

A

silicon monoxide
10097-28-6

silicon monoxide

B

(SiO)2
12439-79-1

(SiO)2

C

(SiO)3
12439-83-7

(SiO)3

Conditions
ConditionsYield
With O2 In neat (no solvent) (Ar); O2 was passed over heated Si at about 1500 K, mixt. of Ar/SiO (200:1) was condensed for about 2 h on a helium-cooled Cu surface; not isolated, detected IR spect.;
oxygen
80937-33-3

oxygen

silicon
7440-21-3

silicon

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
Ar-O2 mixture was conducted over Si at 1200-1300°C;
O2 stream passing over Si heated to ca. 1500 K in vac. at ca. 1E-6 mbar;
dinitrogen monoxide
10024-97-2

dinitrogen monoxide

silicon
7440-21-3

silicon

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
In gaseous matrix byproducts: N2; silicon evaporated at temp. between 1600-2100°C, Si vapor directly reacted with N2O in the pressure range E-5 to E-3 Torr (single and multiple collision condns.); not isolated, identified by chemiluminescence;
Nitrogen dioxide
10102-44-0

Nitrogen dioxide

silicon
7440-21-3

silicon

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
In gaseous matrix byproducts: NO; silicon evaporated at temp. between 1600-2050°C, Si vapor directly reacted with NO2 in the pressure range E-5 to E-3 Torr (single and multiple collision condns.); not isolated, identified by chemiluminescence;
tetrachloromethane
56-23-5

tetrachloromethane

oxygen
80937-33-3

oxygen

monosilane
7440-21-3

monosilane

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
In gaseous matrix byproducts: HCl; diluting gas mixt. in Pyrex reaction cell (20 Torr), photolysis at 193 nm, CCl4/SiH4/O2=3/10/1 m Torr, total pressure 30 Torr, delay time between photolysis ArF and probe dye lasers 500 μs;
Si10(1+)

Si10(1+)

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
With oxygen In gaseous matrix Kinetics; byproducts: Si8(1+), Si6(1+), Si4(1+); react. of Si cluster with O2 in Ne matrix in the temp. range of 228-434 K; detected by quadrupole MAS;
Si50(1+)

Si50(1+)

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
With oxygen In gaseous matrix Kinetics; react. of Si cluster with O2 in Ne matrix in the temp. range of 228-434 K; detected by quadrupole MAS;
Si35(1+)

Si35(1+)

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
With oxygen In gaseous matrix Kinetics; byproducts: Si33(1+); react. of Si cluster with O2 in Ne matrix in the temp. range of 228-434 K; detected by quadrupole MAS;
Si30(1+)

Si30(1+)

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
With oxygen In gaseous matrix Kinetics; byproducts: Si29(1+); react. of Si cluster with O2 in Ne matrix in the temp. range of 228-434 K; detected by quadrupole MAS;
Si20(1+)

Si20(1+)

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
With oxygen In gaseous matrix Kinetics; byproducts: Si18(1+); react. of Si cluster with O2 in Ne matrix in the temp. range of 228-434 K; detected by quadrupole MAS;
Si14(1+)

Si14(1+)

silicon monoxide
10097-28-6

silicon monoxide

Conditions
ConditionsYield
With oxygen In gaseous matrix Kinetics; byproducts: Si12(1+); react. of Si cluster with O2 in Ne matrix in the temp. range of 228-434 K; detected by quadrupole MAS;
oxygen
80937-33-3

oxygen

silicon
7440-21-3

silicon

A

silicon monoxide
10097-28-6

silicon monoxide

B

oxygen

oxygen

Conditions
ConditionsYield
reaction studied by using crossed molecular beam technique at 13 kJ/mol of collision energy; detected by laser-induced fluorescence;
silicon monoxide
10097-28-6

silicon monoxide

6-nitroindole
4769-96-4

6-nitroindole

3-bromo-6-nitro-1H-indole
126807-09-8

3-bromo-6-nitro-1H-indole

Conditions
ConditionsYield
In 2Cl288%
silicon monoxide
10097-28-6

silicon monoxide

3-chloro-4-methyl-5-nitro benzoic acid
181871-69-2

3-chloro-4-methyl-5-nitro benzoic acid

(3-chloro-4-methyl-5-nitrophenyl) methanol

(3-chloro-4-methyl-5-nitrophenyl) methanol

Conditions
ConditionsYield
With BH3-THF In tetrahydrofuran; hexane; toluene
silicon monoxide
10097-28-6

silicon monoxide

(107)silver

(107)silver

A

silver(SiO)

silver(SiO)

B

silver(η4-Si2O2)

silver(η4-Si2O2)

C

silver(η6-Si3O3)

silver(η6-Si3O3)

D

Ag(Si(n)O(n))

Ag(Si(n)O(n))

Conditions
ConditionsYield
SiO-vapour is deposited from solid SiO held in a resistively heated Mo-furnace on to the freshly frozen surface of adamantane matrix and bombarded with (107)Ag atoms from another furnace located in the rotating cryostat at 77 K; examination by in situ FTIR and by EPR after transfer from the cryostat still at 77 K and under high vac.;
silicon monoxide
10097-28-6

silicon monoxide

A

(SiO)2
12439-79-1

(SiO)2

B

(SiO)3
12439-83-7

(SiO)3

C

(SiO)4
149817-63-0

(SiO)4

Conditions
ConditionsYield
In gaseous matrix in situ generated SiO stream mixing with matrix gas (ca. 1:200), gas mixt. condensation at polished Cu mirror at 25 K; Raman spectroscopy;
silicon monoxide
10097-28-6

silicon monoxide

palladium
7440-05-3

palladium

Conditions
ConditionsYield
In solid matrix condensation with argon on a cold copper surface; not isolated, detected by IR;
silicon monoxide
10097-28-6

silicon monoxide

nitrogen
7727-37-9

nitrogen

aluminium
7429-90-5

aluminium

Reaxys ID: 23101998

Reaxys ID: 23101998

Conditions
ConditionsYield
at 1620℃; under 760.051 Torr; for 1.5h;
silicon monoxide
10097-28-6

silicon monoxide

nitrogen
7727-37-9

nitrogen

silicon nitride

silicon nitride

Conditions
ConditionsYield
With europium(III) oxide at 1620℃; under 760.051 Torr; for 1.5h;

10097-28-6Related news

Silicon nanowires grown from Silicon monoxide (cas 10097-28-6) under hydrothermal conditions07/23/2019

Hydrothermal method with silicon monoxide as starting material was used to synthesize silicon nanowires (SiNWs). Transmission electron spectroscopy demonstrates that SiNWs have smooth surface and about 35 nm in diameter, micrometers in length. High-resolution transmission electron spectroscopy s...detailed

High-performance porous Silicon monoxide (cas 10097-28-6) anodes synthesized via metal-assisted chemical etching07/20/2019

We describe a simple process for synthesizing three-dimensional porous silicon monoxide anode materials from bulk silicon monoxide powders by combining a galvanic displacement reaction and metal catalytic etching process. Silver nanoparticles that act as a catalyst were deposited on the surface ...detailed

Electronic structures of Silicon monoxide (cas 10097-28-6) film probed by X-ray absorption spectroscopy07/21/2019

Electronic structures of thin films of silicon monoxides (SiO) deposited on a solid surface have been in-situ investigated by X-ray photoelectron spectroscopy (XPS) and X-ray absorption fine structure (XAFS). As a substrate, a highly oriented pyrolytic graphite (HOPG) was used because the hybrid...detailed

Silicon monoxide (cas 10097-28-6) role in silicon nanocluster formation during Si-rich oxide layer annealing – Monte Carlo simulation07/17/2019

A kinetic Monte Carlo model of silicon nanocluster (Si-nc) formation during high temperature annealing of Si suboxide layers was suggested. The model takes into account, along with silicon and oxygen atom diffusion, the processes of silicon monoxide creation and dissociation. It was demonstrated...detailed

Silicon monoxide (cas 10097-28-6) assisted synthesis of Ru modified carbon nanocomposites as high mass activity electrocatalysts for hydrogen evolution07/16/2019

Extremely low content of Ruthenium (Ru) nanoparticles were loaded on the carbon black (Ru/C) via reducing Ru ions with silicon monoxide. The obtained Ru/C nanocomposites exhibit an exciting electrochemical catalytic activity for hydrogen evolution reaction (HER) in the oxygen-free 0.5 M H2SO4 me...detailed

Mitigating the initial capacity loss and improving the cycling stability of Silicon monoxide (cas 10097-28-6) using Li5FeO407/15/2019

Silicon monoxide (SiO) is a promising next-generation anode material for lithium-ion batteries due to the high capacity it offers. However, such material also exhibits a large initial capacity loss which results in significant loss of Li inventory to irreversible reactions in a full cell. To mit...detailed

10097-28-6Relevant articles and documents

Investigation of the Prototype Silylene Reaction, SiH2 + H 2O (and D2O): Time-Resolved Gas-Phase Kinetic Studies, Isotope Effects, RRKM Calculations, and Quantum Chemical Calculations of the Reaction Energy Surface

Becerra, Rosa,Cannady, J.Pat,Walsh, Robin

, p. 11049 - 11056 (2003)

Time-resolved kinetic studies of the reaction of silylene, SiH 2, with H2O and with D2O have been carried out in the gas phase at 296 and at 339 K, using laser flash photolysis to generate and monitor SiH2. The reaction was studied over the pressure range 10-200 Torr with SF6 as bath gas. The second-order rate constants obtained were pressure dependent, indicating that the reaction is a third-body assisted association process. Rate constants at 339 K were about half those at 296 K. Isotope effects, kH/kD. were small averaging 1.076 ± 0.080, suggesting no involvement of H- (or D-) atom transfer in the rate determining step. RRKM modeling was undertaken based on a transition state appropriate to formation of the expected zwitterionic donor-acceptor complex, H2Si ... OH2. Because the reaction is close to the low pressure (third order) region, it is difficult to be definitive about the activated complex structure. Various structures were tried, both with and without the incorporation of rotational modes, leading to values for the high-pressure limiting (i.e., true second-order) rate constant in the range 9.5 × 10-11 to 5 × 10-10 cm3 molecule-1 s-1. The RRKM modeling and mechanistic interpretation is supported by ab initio quantum calculations carried out at the G2 and G3 levels. The results are compared and contrasted with the previous studies.

Infrared spectra and density functional calculations of the SiCO4 molecule in solid argon

Dong, Jian,Miao, Lei,Zhou, Mingfei

, p. 31 - 36 (2002)

The SiCO4 molecule has been produced by reaction between silicon dioxide and carbon dioxide molecules in solid argon. Silicon dioxide molecules were prepared by reactions of laser-ablated silicon atoms with oxygen in excess argon. When carbon d

Woodward, R.,Hayden, J. S.,Gole, J. L.

, p. 153 - 170 (1985)

Kinetics of the SiH3 + O2 reaction: A new transition state for SiO production

Murakami,Koshi,Matsui,Kamiya,Umeyama

, p. 17501 - 17506 (1996)

The mechanism of SiO formation in the laser photolysis of SiH4/O2/CCl4 mixtures was investigated using a laser-induced fluorescence method. Measured rates for the SiO production corresponded to the decay rates of SiH3 radical and depended linearly on the O2 concentration. The yield of SiO was estimated on the basis of LIF intensity, and it was found that SiO was one of the major products in the SiH3 + O2 reaction. The bimolecular rate constant for the SiO production was determined to be (1.14 ± 0.18) × 10-11 cm3 molecules-1 s-1. Ab initio molecular orbital calculations were performed for various pathways of the SiH3 + O2 reaction. Geometries were optimized at the MP2(full)/6-31G(d) level of theory, and relative energies and barrier heights were calculated at the G2(MP2) level of theory. Silyl radical and O2 react to form SiH3OO, which irreversibly decomposes to various excited products. A new transition state for the production of cyclic H2SiO2 (siladioxirane) + H from SiH3OO adduct was found. Possible decomposition channels of the vibrationally excited products of the SiH3 + O2 reaction to produce SiO are discussed.

Raman-spectroscopy of oligomeric SiO species isolated in solid methane

Friesen, Markus,Junker, Markus,Zumbusch, Andreas,Schnoeckel, Hansgeorg

, p. 7881 - 7887 (2007/10/03)

From the IR-spectra of matrix isolated SiO species a D2h-structure has been postulated for the dimer and a D3h-structure for the trimer. High quality Raman-spectra - necessary for the complete characterization - were missing so far. Here we report the Raman-spectra especially of the totally symmetric vibrations for Si2O2 and Si3O3 and their 16O/18O isotopomers isolated in solid methane. We also detect the most intense A1-vibration of Si4O4 and can assign it with its 16O/18O isotopic splitting. Ab initio calculations for all oligomers are presented in order to support the assignment of the spectra and to obtain geometric and energetic information about the oligomeric species which have been detected experimentally.

Post a RFQ

Enter 15 to 2000 letters.Word count: 0 letters

Attach files(File Format: Jpeg, Jpg, Gif, Png, PDF, PPT, Zip, Rar,Word or Excel Maximum File Size: 3MB)

1

What can I do for you?
Get Best Price

Get Best Price for 10097-28-6