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1029926-89-3

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1029926-89-3 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 1029926-89-3 includes 10 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 7 digits, 1,0,2,9,9,2 and 6 respectively; the second part has 2 digits, 8 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 1029926-89:
(9*1)+(8*0)+(7*2)+(6*9)+(5*9)+(4*2)+(3*6)+(2*8)+(1*9)=173
173 % 10 = 3
So 1029926-89-3 is a valid CAS Registry Number.

1029926-89-3Downstream Products

1029926-89-3Relevant academic research and scientific papers

Functionalized methanofullerenes used as n-type materials in bulk-heterojunction polymer solar cells and in field-effect transistors

Yang, Changduk,Jin, Young Kim,Cho, Shinuk,Jae, Kwan Lee,Heeger, Alan J.,Wudl, Fred

, p. 6444 - 6450 (2008/12/22)

The synthesis of two well-solubilized [60]methanofullerene derivatives (p-EHO-PCBM and p-EHO-PCBA) is presented for usage in organic solar cells and in field-effect transistors. The para position of the PCBM's phenyl ring was substituted with a branched alkoxy side chain, which contributes to higher solubility, facilitating synthesis, purification, and processing. We find a small change of the open-circuit voltage (Voc) as a slight improvement in performance upon application in P3HT/[60]methanofullerene bulk-heterojunction-photovoltaic cells, when compared to PCBM, because of the electron donation of the alkoxy group. In the case of the devices with a TiOx layer, the best power conversion efficiencies (PCE, ηe) is observed in a layered structure of P3HT/p-EHO-PCBA/ TiOx (ηe = 2.6%), which slightly exceeds that of P3HT/PCBM/TiOx (ηe = 2.3%) under conditions reported here. This can be attributed, in part, to the carboxylic acid group in p-EHO-PCBA that leads to an effective interface interaction between the active layer and TiOx phase. In addition, n-channel organic field-effect transistor (OFET) devices were fabricated with thin films of p-EHO-PCBM and p-EHO-PCBA, respectively cast from solution on SiO2/Si substrates. The values of field-effect mobility (μ) for p-EHO-PCBM and p-EHO-PCBA are 1 × 10-2 and 1.6 × 10-3 cm2/ V·s, respectively. The results in this paper demonstrate the effects of a carboxylic acid group and an electron-donating substituent in [60]methanofullerenes as n-type materials with respect to organic solar cells and OFET applications.

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