118569-70-3Relevant articles and documents
FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN
-
Paragraph 0272-0276, (2021/06/04)
An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. The problem described above can be solved by the following film forming material for lithography. A film forming material for lithography comprising: a compound having a group of formula (0A): (In formula (0A), RA is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; andRB is an alkyl group having 1 to 4 carbon atoms.); anda compound having a group of formula (0B):
Synthesis of new bis(tetrahydropyrrolo[3,4-b]carbazoles) with a functionalized diaryl spacer
Mehrabani,Pindur
, p. 1406 - 1412 (2007/10/03)
Some new bis(tetrahydropyrrolo[3,4-b]carbazoles) were synthesized by Diels-Alder reactions of in-situ generated indole-2,3-quinodimethanes with a variety of bismaleimides as dienophiles and also by reaction of dianilines with a succinic acid anhydride group incorporated into a biscarbazole. In a special reaction a spermine linker was introduced. The new biscarbazoles represent potential DNA ligands for the development of new antitumor active drugs.