12008-33-2

Basic information

• Product Name: YTTERBIUM BORIDE
• Synonyms: (oc-6-11)-ytterbiumboride(ybb6;ytterbiumhexaboride;YTTERBIUM BORIDE;99.5%(REO);Ytterbium boride, 99.5% (REO);Einecs 234-540-5;Ytterbium boride (ybb6), (oc-6-11)-;YtterbiuM Boride, -325 Mesh
• CAS NO: 12008-33-2
• Molecular Formula: B6Yb
• Molecular Weight: 237.91
• EINECS: 234-540-5
• Mol File: 12008-33-2.mol
• Article Data: 7

Chemical Properties

• Boiling Point: °Cat760mmHg
• Flash Point: °C
• Appearance: /
• Density: g/cm³
• CAS DataBase Reference: YTTERBIUM BORIDE(CAS DataBase Reference)
• NIST Chemistry Reference: YTTERBIUM BORIDE(12008-33-2)
• EPA Substance Registry System: YTTERBIUM BORIDE(12008-33-2)

Safety Data

• TSCA: Yes
• Hazardous Substances Data: 12008-33-2(Hazardous Substances Data)

Usage

General Description

Ytterbium boride is a compound consisting of ytterbium and boron, with the chemical formula YbB6. It is a rare earth intermetallic compound that is known for its high melting point and hardness. Ytterbium boride is a refractory material, meaning it can withstand high temperatures and harsh conditions without degrading. It has potential applications in the field of materials science, such as in the production of cutting tools, wear-resistant coatings, and other high-temperature components. Ytterbium boride is also being studied for its potential use in thermoelectric devices and other advanced technologies.

InChI:InChI=1/B6.Yb/c1-2-5(1)3-4(5)6(1,2)3;/q-2;+2

Upstream product

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Related news

Rapid deposition and thermoelectric properties of YTTERBIUM BORIDE (cas 12008-33-2) thin films using hybrid physical chemical vapor deposition07/24/2019

Thin films of YbB4 and YbB6 have been deposited on sapphire substrates via hybrid physical chemical vapor deposition (HPCVD) using elemental ytterbium and decaborane, B10H14, as sources. The deposition condition dependence of the composition, purity, crystallinity and electrical properties has b...detailed

Relevant articles and documents

Semiconductor-insulator transition in a YbB6 nanowire with boron vacancy

In this paper, we report the study of transport and magnetic properties of ytterbium hexaboride (YbB6) nanowires grown by a low trigger-temperature (200–240 °C) solid state method. The temperature dependence of resistivity shows that the YbBsu

Thermoelectric properties of some metal borides

Polycrystalline AlMgB14 and some hexaborides (CaB6, SrB6, YbB6, SmB6, and CeB6) were synthesized to examine their thermoelectric properties. Single phase of orthorhombic AlMgB14, which contains B12 icosahedral clusters as building blocks, was obtained at sintering temperatures between 1573 and 1823K. Seebeck coefficient (α) and electrical conductivity (σ) of the phase were about 500μV/K and 10-11/Ωm at room temperature, respectively. These values are comparable to those of metal-doped β-rhombohedral boron. On the other hand, metal hexaborides with divalent cation possessed large negative α ranging from -100 to -270μV/K at 1073K. Calculated power factors of CaB6 and SrB 6 exceeded 10-3W/K2m within the entire range of temperature measured. As a result, they can be thought as promising candidates for n-type thermoelectric material.

Evidence for a ferromagnetic transition in Yb1-xLaxB6 (0≤x≤0.006)

Magnetization and muon spin relaxation (μSR)in Yb1-xLaxB6 have been measured to study whether ferromagnetic moments appear as in La-doped CaB6. Magnetization processes of polycrystalline samples for 0≤x≤0.006 have revealed ferromagnetic hysteresis with a saturation moment of 1 × 10-4μB/f.u. On cooling below 150 K, an increase of the internal field up to 0.6 mT has been observed by zero-field/μSR measurements on both polycrystals and single crystals. These results indicate a ferromagnetic transition at 150 K in this system.