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12014-94-7

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12014-94-7 Usage

General Description

Cerium selenide (CeSe2) is a chemical compound consisting of cerium and selenium. It is a semiconductor material and has potential applications in electronic and optoelectronic devices. Cerium selenide has attracted interest due to its unique electrical and optical properties, including a relatively high electron mobility and a narrow bandgap. It can be synthesized using various methods, such as chemical vapor deposition and sputtering, and its properties can be further tailored through doping and alloying. Research on cerium selenide continues to explore its potential for use in semiconductors, photodetectors, and other electronic and optical devices.

Check Digit Verification of cas no

The CAS Registry Mumber 12014-94-7 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,1 and 4 respectively; the second part has 2 digits, 9 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 12014-94:
(7*1)+(6*2)+(5*0)+(4*1)+(3*4)+(2*9)+(1*4)=57
57 % 10 = 7
So 12014-94-7 is a valid CAS Registry Number.
InChI:InChI=1/2Ce.3Se

12014-94-7SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 20, 2017

Revision Date: Aug 20, 2017

1.Identification

1.1 GHS Product identifier

Product name cerium,selenium

1.2 Other means of identification

Product number -
Other names Cerium selenide

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12014-94-7 SDS

12014-94-7Downstream Products

12014-94-7Relevant articles and documents

Electronic structure of CeSe probed by resonant photoemission spectroscopy: A test case for the single-impurity Anderson Hamiltonian

Chiaia,Duo,Tjernberg,Goethelid,Bjoerkqvist,Kumigashira,Yang,Takahashi,Suzuki,Lindau

, p. 12030 - 12035 (1998)

One of the most interesting problems, in the study of the electronic structure of Ce compounds, is the evaluation of the intrinsic linewidth of the atomiclike Ce 4f states in low Kondo temperature compositions. In this context, the case of CeSe is of particular interest, because of the energy location of the Ce 4f0 peak in a pseudogap formed mainly between the Se 4p and the Ce 5d density of states (DOS). This fact results experimentally in the most narrow Ce 4f0 final state so far reported (~280 meV), and represents at the same time an experimental upper limit for the lifetime broadening of this state in low Kondo temperature compounds, and extra information useful in the refinement of theoretical fitting of the data. We present single impurity Anderson Hamiltonian calculations which take advantage of the Ce 5d calculated local density approximation DOS to simulate the delocalized valence band continuum that mixes with the 4f impurity state. These calculations fit the experimental data and reproduce a certain degree of mixing between the Ce 4f and Se 4p states reasonably well.

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