12033-62-4 Usage
Chemical Properties
Hexagonal, brown, bronze, or black
crystals. Insoluble in
water; slightly soluble in aqua regia, nitric acid,
hydrogen fluoride.
Uses
Tantalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.
Production Methods
Tantalum nitride, TaN, is produced by direct synthesis of the elements at 1,100 °C (2,012 °F). Very pure TaN has been produced by spontaneous reaction of lithium amide, LiNH2, and TaCl5 . The compound is often added to cermets in 3–18 wt %. Ta3N5 is used as a red pigment in plastics and paints.
Check Digit Verification of cas no
The CAS Registry Mumber 12033-62-4 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,3 and 3 respectively; the second part has 2 digits, 6 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 12033-62:
(7*1)+(6*2)+(5*0)+(4*3)+(3*3)+(2*6)+(1*2)=54
54 % 10 = 4
So 12033-62-4 is a valid CAS Registry Number.
InChI:InChI=1/5N.3Ta/q5*-3;3*+5
12033-62-4Relevant articles and documents
Tantalum organic precursors and their use for vapor phase deposition of tantalum containing films
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Paragraph 0048, (2015/09/23)
Compounds of formula (I): M(R1CS2)R2R3NR6 R1, R2, R3 are organic ligands being independently selected in H, C1-C4 alkyl group linear or branched, aryl group, silyl group, alkylamine group, alkylsylilamine group. R6 is an organic ligand being independently selected in H, C1-C4 alkyl group linear or branched, aryl group, silyl group, alkylsylilamine group. M is tantalum.
