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12056-90-5

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12056-90-5 Usage

Chemical Properties

gray tetr; 10mm and down lump [LID94] [ALF93]

Check Digit Verification of cas no

The CAS Registry Mumber 12056-90-5 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,5 and 6 respectively; the second part has 2 digits, 9 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 12056-90:
(7*1)+(6*2)+(5*0)+(4*5)+(3*6)+(2*9)+(1*0)=75
75 % 10 = 5
So 12056-90-5 is a valid CAS Registry Number.
InChI:InChI=1/La.2Si/rLaSi2/c2-1-3

12056-90-5SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 18, 2017

Revision Date: Aug 18, 2017

1.Identification

1.1 GHS Product identifier

Product name LANTHANUM SILICIDE

1.2 Other means of identification

Product number -
Other names lanthanum disilicide

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12056-90-5 SDS

12056-90-5Downstream Products

12056-90-5Related news

LANTHANUM SILICIDE (cas 12056-90-5) formation in thin LaSi multilayer films07/31/2019

Alternating layers of Si (200 Å thick) and La (200 Å thick), up to 20 layers altogether, were deposited by electron evaporation under uhv conditions on Si(100) substrates held at 150°C. Isothermal, rapid thermal annealing has been used to react these LaSi multilayer films. Intermixing of thes...detailed

Superconductivity of LANTHANUM SILICIDE (cas 12056-90-5) thin films07/28/2019

Thin films of LaSi2 − x, prepared by solid phase reaction of La with Si substrates in vacuum, have been studied using X-ray diffraction and electron microscopy. Their electrical resistivity was measured as a function of temperature from 1.6 to 300 K. The LaSi2 − x layers were found to be metalli...detailed

12056-90-5Relevant articles and documents

Heat capacity of PrSi2

Dhar S.K.

, p. 149 - 152 (1994)

The heat capacity of PrSi2 and nonmagnetic LaSi2 has been measured from 2 to 24 °K. The data support the earlier observation of two peaks in the ac susceptibility of PrSi2, reported by S. Labroo et al. A substantial fraction of the specific heat of PrSi2 in the paramagnetic region is due to the Schottky contribution arising from the crystal field spit levels. It is essential to consider this contribution for the correct interpretation of the data.

Phase diagram of the La-Si binary system under high pressure and the structures of superconducting LaSi5 and LaSi10

Yamanaka, Shoji,Izumi, Satoshi,Maekawa, Shoichi,Umemoto, Keita

, p. 1991 - 2003 (2009)

The La-Si binary phase diagram under a high pressure of 13.5 GPa was experimentally constructed. New superconducting silicides LaSi5 and LaSi10 were found, which have peritectic decomposition temperatures at 1000 and 750 °C, respecti

The thermodynamic characteristics of lanthanum mono-and disilicides at low temperatures

Bolgar,Gorbachuk,Blinder,Moiseev

, p. 1100 - 1104 (2007/10/03)

Heat capacities of the lanthanum suicides LaSi and LaSi2 are measured for the first time by the adiabatic technique in the temperature range 5-300 K. The coefficients of electronic heat capacity of suicides are determined and the standard values of the basic thermodynamic functions are calculated.

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