LANTHANUM SILICIDE (cas 12056-90-5) formation in thin LaSi multilayer films
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Add time:07/31/2019 Source:sciencedirect.com
Alternating layers of Si (200 Å thick) and La (200 Å thick), up to 20 layers altogether, were deposited by electron evaporation under uhv conditions on Si(100) substrates held at 150°C. Isothermal, rapid thermal annealing has been used to react these LaSi multilayer films. Intermixing of these thin LaSi multilayer films has occurred at temperature as low as 150°C for 2h when annealed. Increasing the annealing temperature from 150 to 400°C for 1 h, LaSi2 forms gradually and the completion of reaction occurs at about 300°C. The determination of the compound stoichiometry by backscattering yields a formulation close to LaSi2.2. During the formation of LaSi2 from 150–400°C, there is some evidence for small grains in the selected area diffraction patterns, indicating that LaSi2 crystallites were present in some regions. However, we have no conclusive evidence for the formation of epitaxial LaSi2 layers when reacted in the solid phase even after RTA (900°C) for 10 s.
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