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129-68-0

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129-68-0 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 129-68-0 includes 6 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 3 digits, 1,2 and 9 respectively; the second part has 2 digits, 6 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 129-68:
(5*1)+(4*2)+(3*9)+(2*6)+(1*8)=60
60 % 10 = 0
So 129-68-0 is a valid CAS Registry Number.

129-68-0SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 19, 2017

Revision Date: Aug 19, 2017

1.Identification

1.1 GHS Product identifier

Product name aceanthryleno[2,1-a]aceanthrylene-5,13-dione

1.2 Other means of identification

Product number -
Other names Acedianthrone

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:129-68-0 SDS

129-68-0Downstream Products

129-68-0Relevant articles and documents

Z-Shaped Pentaleno-Acene Dimers with High Stability and Small Band Gap

Dai, Gaole,Chang, Jingjing,Luo, Jie,Dong, Shaoqiang,Aratani, Naoki,Zheng, Bin,Huang, Kuo-Wei,Yamada, Hiroko,Chi, Chunyan

, p. 2693 - 2696 (2016)

Acene-based materials have promising applications for organic electronics but the major constrain comes from their poor stability. Herein a new strategy to stabilize reactive acenes, by fusion of an anti-aromatic pentalene unit onto the zigzag edges of two acene units to form a Z-shaped acene dimer, is introduced. The Z-shaped acene dimers are extremely stable and show a small energy gap resulting from intramolecular donor-acceptor interactions. X-ray crystallographic analysis revealed their unique geometry and one-dimensional slip-stack columnar structure. Besides optical and electrochemical characterizations, solution-processed field-effect transistors were also fabricated.

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