1303-11-3

Usage

Uses

Used in Semiconductor Electronics:
Indium Arsenide is used as a semiconductor material for its superior electron mobility and velocity, making it ideal for high-speed and high-power applications.
Used in Infrared Detectors:
Indium Arsenide is used as a material for constructing infrared detectors due to its strong photovoltaic properties and ability to detect infrared radiation.
Used in Terahertz Radiation Source:
Indium Arsenide is utilized as a terahertz radiation source because of its strong Photo-Dember effect, which allows for the efficient generation of terahertz waves.
Used in High-Power Applications Detector:
Indium Arsenide is employed in high-power applications as a detector material, taking advantage of its high electron mobility and velocity for improved performance in these demanding conditions.
Used in Diode Lasers:
Indium Arsenide is used in the construction of diode lasers, leveraging its semiconductor properties and photovoltaic capabilities to create efficient and high-powered laser devices.
Chemical Properties:
Indium Arsenide is a crystalline material that is insoluble in acids, which contributes to its stability and durability in various applications.

Hazard

See indium; arsenic.

InChI:InChI=1/As.In/q-3;+3

Related news

Preparing and characterization of INDIUM ARSENIDE (cas 1303-11-3) (InAs) thin films by chemical spray pyrolysis (CSP) technique08/17/2019

In this research, InAs thin films were prepared by chemical spray pyrolysis method at different substrate temperatures (250 °C, 280 °C, 310 °C), with fixing the molarity of solution to 0.035 M and the deposition time to 30 min. X-ray diffraction shows that the structure of InAs films were pol...detailed

Structural features of indium antimonide quantum dots on the INDIUM ARSENIDE (cas 1303-11-3) substrate08/16/2019

The properties of InSb/InAs quantum dots (QDs) have been investigated by transmission electron microscopy (TEM). Specific features of diffraction contrast were discovered in plan-view TEM images of big (9–10 nm in height and 38–50 nm in diameter) InSb QDs. To understand the origin of such dist...detailed

Investigation of deep level defects in electron irradiated INDIUM ARSENIDE (cas 1303-11-3) quantum dots embedded in a gallium arsenide matrix08/15/2019

Gallium arsenide diodes with and without indium arsenide quantum dots were electron irradiated to investigate radiation induced defects. Baseline and quantum dot gallium arsenide pn-junction diodes were characterized by capacitance–voltage measurements, and deep level transient spectroscopy. Ca...detailed

Mathematical simulation, synthesis, characterization and application of INDIUM ARSENIDE (cas 1303-11-3) whiskers08/12/2019

For the production of indium arsenide whiskers to be stable under high-energy electron irradiation, the mathematical model describing the deposition of tin-doped indium arsenide whiskers from vapor phase was created. Presented mathematical model covers the issues related to the analysis of the g...detailed

Effect of strain and diameter on electronic and charge transport properties of INDIUM ARSENIDE (cas 1303-11-3) nanowires08/11/2019

The impact of uni-axial compressive and tensile strain and diameter on the electronic band structure of indium arsenide (InAs) nanowires (NWs) is investigated using first principles calculations. Effective masses and band gaps are extracted from the electronic structure for relaxed and strained ...detailed