1303-11-3

Basic information

• Product Name: INDIUM ARSENIDE
• Synonyms: Arsinetriylindium(III);indiganylidynearsane;Indium arsenide, 99.9999% trace metals basis;Indium arsenide, Hardly attacked by mineral acids;indiamarsenide;indiumarsenide(inas);INDIUM ARSENIDE;99.9999%(metalsbasis)
• CAS NO: 1303-11-3
• Molecular Formula: AsIn
• Molecular Weight: 189.74
• EINECS: 215-115-3
• Product Categories: Inorganics
• Mol File: 1303-11-3.mol
• Article Data: 0

Chemical Properties

• Melting Point: 936°C
• Appearance: Gray/1.5 To 9.5mm Polycrystalline Pieces
• Density: 5.69 g/cm3
• Refractive Index: 3.51
• Water Solubility: Insoluble in water.
• Merck: 14,4949
• CAS DataBase Reference: INDIUM ARSENIDE(CAS DataBase Reference)
• NIST Chemistry Reference: INDIUM ARSENIDE(1303-11-3)
• EPA Substance Registry System: INDIUM ARSENIDE(1303-11-3)

Safety Data

• RIDADR: UN1557
• TSCA: Yes
• HazardClass: 6.1
• PackingGroup: III
• Hazardous Substances Data: 1303-11-3(Hazardous Substances Data)

Usage

Chemical Properties

Crystals.Insoluble in acids.

Uses

Different sources of media describe the Uses of 1303-11-3 differently. You can refer to the following data:
1. Indium arsenide is used in semiconductor devices.
2. Indium arsenide is used in semiconductor electronics, construction of infrared detectors, terahertz radiation source, as it is a strong Photo-dember emitter, superior electron mobility and velocity, in high-power applications detector, diode lasers.
3. In semiconductor electronics.

Hazard

See indium; arsenic.

InChI:InChI=1/As.In/q-3;+3

Related news

Preparing and characterization of INDIUM ARSENIDE (cas 1303-11-3) (InAs) thin films by chemical spray pyrolysis (CSP) technique08/17/2019

In this research, InAs thin films were prepared by chemical spray pyrolysis method at different substrate temperatures (250 °C, 280 °C, 310 °C), with fixing the molarity of solution to 0.035 M and the deposition time to 30 min. X-ray diffraction shows that the structure of InAs films were pol...detailed

Structural features of indium antimonide quantum dots on the INDIUM ARSENIDE (cas 1303-11-3) substrate08/16/2019

The properties of InSb/InAs quantum dots (QDs) have been investigated by transmission electron microscopy (TEM). Specific features of diffraction contrast were discovered in plan-view TEM images of big (9–10 nm in height and 38–50 nm in diameter) InSb QDs. To understand the origin of such dist...detailed

Investigation of deep level defects in electron irradiated INDIUM ARSENIDE (cas 1303-11-3) quantum dots embedded in a gallium arsenide matrix08/15/2019

Gallium arsenide diodes with and without indium arsenide quantum dots were electron irradiated to investigate radiation induced defects. Baseline and quantum dot gallium arsenide pn-junction diodes were characterized by capacitance–voltage measurements, and deep level transient spectroscopy. Ca...detailed

Mathematical simulation, synthesis, characterization and application of INDIUM ARSENIDE (cas 1303-11-3) whiskers08/12/2019

For the production of indium arsenide whiskers to be stable under high-energy electron irradiation, the mathematical model describing the deposition of tin-doped indium arsenide whiskers from vapor phase was created. Presented mathematical model covers the issues related to the analysis of the g...detailed

Effect of strain and diameter on electronic and charge transport properties of INDIUM ARSENIDE (cas 1303-11-3) nanowires08/11/2019

The impact of uni-axial compressive and tensile strain and diameter on the electronic band structure of indium arsenide (InAs) nanowires (NWs) is investigated using first principles calculations. Effective masses and band gaps are extracted from the electronic structure for relaxed and strained ...detailed