1315-01-1 Usage
Uses
Used in Lubrication Industry:
Tin(IV) disulfide is used as a lubricant due to its layered structure, which provides excellent friction reduction and wear resistance properties.
Used in Electronics Industry:
Tin(IV) disulfide is used as a semiconductor material for its potential applications in electronic devices, taking advantage of its semiconducting properties.
Used in Energy Storage Devices:
Tin(IV) disulfide is used in the development of energy storage devices, such as batteries and supercapacitors, due to its electrochemical properties.
Used in Solar Cell Technology:
Tin(IV) disulfide is considered a promising material for use in solar cell technology, leveraging its semiconducting and light-absorbing properties to improve the efficiency of solar energy conversion.
Used in Glass Production:
Tin(IV) disulfide is used in the production of certain types of glass, where its unique properties can enhance the glass's characteristics.
Used in Ceramics and Plastics Industry:
Tin(IV) disulfide is utilized in the manufacturing of ceramics and plastics, where it can improve the material's properties, such as hardness, durability, and resistance to wear.
Check Digit Verification of cas no
The CAS Registry Mumber 1315-01-1 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 1,3,1 and 5 respectively; the second part has 2 digits, 0 and 1 respectively.
Calculate Digit Verification of CAS Registry Number 1315-01:
(6*1)+(5*3)+(4*1)+(3*5)+(2*0)+(1*1)=41
41 % 10 = 1
So 1315-01-1 is a valid CAS Registry Number.
InChI:InChI=1/2H2S.Sn.2H/h2*1H2;;;/q2*-2;;;/r2H2S.H2Sn/h3*1H2/q2*-2;
1315-01-1Relevant academic research and scientific papers
Atomic and electronic structure transformations in SnS2 at high pressures: A joint single crystal X-ray diffraction and DFT study
Fils?,Eikeland,Zhang,Madsen,Iversen
, p. 3798 - 3805 (2016/03/05)
The layered semiconductor SnS2 spurs much interest for both intercalation and optoelectronic applications. Despite the wealth of research in the field of metal dichalcogenides, the structure-property relationship of this compound remains unclear. Here we present a thorough study combining single-crystal X-ray diffraction and DFT calculations on SnS2 in the pressure range 0 2 compounds, making it clear that SnS2 presents a unique and interesting case in the field of metal dichalcogenides. The compression leads to a significant increase in S?S interlayer interaction which in turn results in a change in the electronic structure, documented through DFT band structure calculations. The calculated narrowing of the band gap is supported by a significant, reversible color change of the single crystal. At 20 GPa, the size of the band gap has decreased from 2.15 to 0.88 eV, and band gap closure is predicted to occur at 33 GPa.
