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7440-31-5

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7440-31-5 Usage

General Description

Tin powder is a form of tin (Sn), a chemical element belonging to the carbon group, produced by grinding the metal into fine particles. As a silvery-white metal, tin powder is primarily used in metalworking and metallurgy, for alloy production, in the manufacturing of bearing alloys, bronze, and pewter, and as a catalyst in chemical reactions. It's also used in the production of certain types of electronics and in the creation of various pigments and dyes. Tin is not toxic as inorganic tin compounds, but the inhalation of tin powder may cause irritation to the respiratory tract and minor health hazards, requiring precautionary measures during handling and storage. Environmental exposure to tin is also a concern, as it can bioaccumulate and pose threats to aquatic organisms.

Check Digit Verification of cas no

The CAS Registry Mumber 7440-31-5 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 7,4,4 and 0 respectively; the second part has 2 digits, 3 and 1 respectively.
Calculate Digit Verification of CAS Registry Number 7440-31:
(6*7)+(5*4)+(4*4)+(3*0)+(2*3)+(1*1)=85
85 % 10 = 5
So 7440-31-5 is a valid CAS Registry Number.
InChI:InChI=1/Sn

7440-31-5 Well-known Company Product Price

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  • Alfa Aesar

  • (41169)  Tin slug, 11mm (0.43in) dia x 2mm (0.1in) thick, Puratronic?, 99.995% (metals basis)   

  • 7440-31-5

  • 10pc

  • 1174.0CNY

  • Detail
  • Alfa Aesar

  • (41169)  Tin slug, 11mm (0.43in) dia x 2mm (0.1in) thick, Puratronic?, 99.995% (metals basis)   

  • 7440-31-5

  • 50pc

  • 5587.0CNY

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  • Alfa Aesar

  • (14134)  Tin slug, 11mm (0.43in) dia x 4mm (0.2in) thick, Puratronic?, 99.999% (metals basis)   

  • 7440-31-5

  • 10pc

  • 1749.0CNY

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  • Alfa Aesar

  • (14134)  Tin slug, 11mm (0.43in) dia x 4mm (0.2in) thick, Puratronic?, 99.999% (metals basis)   

  • 7440-31-5

  • 50pc

  • 6431.0CNY

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  • Alfa Aesar

  • (43416)  Tin slug, 6.35mm (0.25in) dia x 6.35mm (0.25in) length, Puratronic?, 99.995% (metals basis)   

  • 7440-31-5

  • 25g

  • 718.0CNY

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  • Alfa Aesar

  • (43416)  Tin slug, 6.35mm (0.25in) dia x 6.35mm (0.25in) length, Puratronic?, 99.995% (metals basis)   

  • 7440-31-5

  • 100g

  • 2207.0CNY

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  • Alfa Aesar

  • (40898)  Tin sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick, 99.995% (metals basis)   

  • 7440-31-5

  • 1each

  • 2519.0CNY

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  • Alfa Aesar

  • (40899)  Tin sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.250in) thick, 99.995% (metals basis)   

  • 7440-31-5

  • 1each

  • 2920.0CNY

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  • Alfa Aesar

  • (40900)  Tin sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.125in) thick, 99.995% (metals basis)   

  • 7440-31-5

  • 1each

  • 3332.0CNY

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  • Alfa Aesar

  • (40901)  Tin sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.250in) thick, 99.995% (metals basis)   

  • 7440-31-5

  • 1each

  • 2511.0CNY

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  • Alfa Aesar

  • (10789)  Tin foil, 0.025mm (0.001in) thick, hard, 99.9% (metals basis)   

  • 7440-31-5

  • 15x15cm

  • 222.0CNY

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  • Alfa Aesar

  • (10789)  Tin foil, 0.025mm (0.001in) thick, hard, 99.9% (metals basis)   

  • 7440-31-5

  • 15x75cm

  • 442.0CNY

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7440-31-5SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 16, 2017

Revision Date: Aug 16, 2017

1.Identification

1.1 GHS Product identifier

Product name tin atom

1.2 Other means of identification

Product number -
Other names wang

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:7440-31-5 SDS

7440-31-5Synthetic route

2C6H18NSi2(1-)*C12H22N2Si2(2-)*2Sn(2+)

2C6H18NSi2(1-)*C12H22N2Si2(2-)*2Sn(2+)

tin(ll) chloride

tin(ll) chloride

A

tin
7440-31-5

tin

B

{((CH3)3Si)2NSnCl2NSi(CH3)3}2C6H4
157201-33-7

{((CH3)3Si)2NSnCl2NSi(CH3)3}2C6H4

Conditions
ConditionsYield
In diethyl ether; benzene-d6 7 d at 20°C;A n/a
B 100%
tin(IV) oxide

tin(IV) oxide

Conditions
ConditionsYield
With aluminium In neat (no solvent) byproducts: Al2O3; reaction of SnO2 and Al to Sn and Al2O3 after passing in over a blower flame;;96%
With Al In neat (no solvent) byproducts: Al2O3; reaction of SnO2 and Al to Sn and Al2O3 after passing in over a blower flame;;96%
With carbon monoxide In neat (no solvent) intermediate formation of solid SnO at reduction with CO at 600-850°C;;
calcium metastannate

calcium metastannate

Conditions
ConditionsYield
With iron In not given pptn.; no Sb, no As, 0.16% Fe, 0.053% Al;95%
With Fe In not given pptn.; no Sb, no As, 0.16% Fe, 0.053% Al;95%
With hydrogenchloride; aluminium In hydrogenchloride leaching (HCl soln.) at ambient temp.; pptn. (Al plates); washing; melting; content: 0.89% Sb, 0.036% As, 0.022% Fe, 0.024% Al;94.5%
With HCl; Al In hydrogenchloride leaching (HCl soln.) at ambient temp.; pptn. (Al plates); washing; melting; content: 0.89% Sb, 0.036% As, 0.022% Fe, 0.024% Al;94.5%
stannous fluoride

stannous fluoride

Conditions
ConditionsYield
With chromium In melt byproducts: CrF2;95%
In hydrogen fluoride Electrolysis; Pt cathode, Sn anode; 29-30°C, 1 A/dm**2 with different additives;
With lithium fluoride In neat (no solvent) byproducts: Li3VF6; formation of Sn and Li3VF6 in a mixture with LiF with metallic V;;
sodium stannate(II)

sodium stannate(II)

tin(II) oxide

tin(II) oxide

Conditions
ConditionsYield
at 40℃; for 16h; Temperature;95%
vanadocene

vanadocene

dibutyltin dibenzoate
5847-54-1

dibutyltin dibenzoate

A

tin
7440-31-5

tin

B

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

C

(Benzoyloxy)tributylstannan
4342-36-3

(Benzoyloxy)tributylstannan

D

dibutyltin
1191-48-6

dibutyltin

E

cyclopenta-1,3-diene
542-92-7

cyclopenta-1,3-diene

Conditions
ConditionsYield
In toluene molar ratio Cp2V/Sn-compound 1/2, sealed ampoule, 20°C, 24 h;A n/a
B 94%
C n/a
D n/a
E 84%
3,4-dimercaptotoluene
496-74-2

3,4-dimercaptotoluene

tin(II) dimethylamide
55853-40-2

tin(II) dimethylamide

A

tin
7440-31-5

tin

[Me2NH2]2[Sn(toluene-3,4-dithiolato)3]

[Me2NH2]2[Sn(toluene-3,4-dithiolato)3]

Conditions
ConditionsYield
In tetrahydrofuran a soln. of Sn compd. added to a soln. of ligand at room temp.; filtered, crystd. at room temp. for 1 h; elem. anal.;A n/a
B 94%
1,2-dimethoxyethane
110-71-4

1,2-dimethoxyethane

ytterbium

ytterbium

diphenyltin(IV) dichloride
1135-99-5

diphenyltin(IV) dichloride

A

tin
7440-31-5

tin

B

YbCl2(tetrahydrofuran)2
145447-65-0

YbCl2(tetrahydrofuran)2

C

Yb2Cl2(CH3OCH2CH2OCH3)6(2+)*2((C6H5)3Sn)3Sn(1-)={Yb2Cl2(CH3OCH2CH2OCH3)6}{((C6H5)3Sn)3Sn}2

Yb2Cl2(CH3OCH2CH2OCH3)6(2+)*2((C6H5)3Sn)3Sn(1-)={Yb2Cl2(CH3OCH2CH2OCH3)6}{((C6H5)3Sn)3Sn}2

Conditions
ConditionsYield
In tetrahydrofuran absence of air; stirring (room temp., 12 h), evapn. (vac.), dissoln. in DME, then 10 h (room temp.); crystn. (-10°C, 24 h); elem. anal.;A 81.94%
B 92.54%
C 75.39%
phenyltin trichloride
1124-19-2

phenyltin trichloride

ytterbium

ytterbium

A

tin
7440-31-5

tin

bis(triphenylstannyl)tetrakis(tetrahydrofuran)ytterbium

bis(triphenylstannyl)tetrakis(tetrahydrofuran)ytterbium

C

YbCl2(tetrahydrofuran)2
145447-65-0

YbCl2(tetrahydrofuran)2

Conditions
ConditionsYield
With THF In tetrahydrofuran absence of air; stirring (room temp., 30 h); filtration off of YbCl2(THF)2 and Sn, evapn. (vac.), washing (hexane), recrystn. (THF);A 52.75%
B 65.59%
C 89.53%
bis(pentamethylcyclopentadienyl)Sn
68757-81-3

bis(pentamethylcyclopentadienyl)Sn

Conditions
ConditionsYield
With potassium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up K was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 45 min; no initial stannocene was observed after the reaction; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically;89%
With sodium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up Na was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 25 h; no initial stannocene was observed after the reaction; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically;81%
With lithium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up Li was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 7 d; 63% of initial material remained unchanged; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically;<1
sodium tetraphenyl borate
143-66-8

sodium tetraphenyl borate

tin(ll) chloride

tin(ll) chloride

Conditions
ConditionsYield
In 1,2-dimethoxyethane Irradiation (UV/VIS); under Ar; mole ratio NaBPh4 : SnCl2 = 2 : 1; irradn. (254 nm) for 8 h gave deposition of Sn; deposit sepd., washed with acetone and water, and dried in vac. to give pure Sn;80%
stannous fluoride

stannous fluoride

silicon
7440-21-3

silicon

A

tin
7440-31-5

tin

B

silicon tetrafluoride
7783-61-1

silicon tetrafluoride

Conditions
ConditionsYield
In melt placing of mixt. of Si with SnF2 (molar ratio SnF2:Si=2.00) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 250°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 76.8%
B n/a
trimethyltin(IV)chloride
1066-45-1

trimethyltin(IV)chloride

A

tin
7440-31-5

tin

B

hexamethyldistannane
661-69-8

hexamethyldistannane

C

trimethylstannane
1631-73-8

trimethylstannane

Conditions
ConditionsYield
With NdI2; THF In tetrahydrofuran Me3SnCl in THF added under stirring at -60°C to NdI2 in THF; warmed to room temp.; stirred for 30 min; filtered off; dried; dissolved in water again; analyzed by GLC;A 74%
B 11%
C 7%
tin(II) dimethylamide
55853-40-2

tin(II) dimethylamide

1,2-benzenedithiole
17534-15-5

1,2-benzenedithiole

A

tin
7440-31-5

tin

B

[Me2NH2]2[Sn(benzene-1,2-dithiolato)3]

[Me2NH2]2[Sn(benzene-1,2-dithiolato)3]

Conditions
ConditionsYield
In tetrahydrofuran a soln. of Sn compd. added to a soln. of ligand at -78°C; filtered, evapd. (vac.), dissolved in MeCN, crystd. at room temp. for 1 h; elem. anal.;A n/a
B 72%
vanadocene

vanadocene

dibutyltin dibenzoate
5847-54-1

dibutyltin dibenzoate

A

tin
7440-31-5

tin

B

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

C

(Benzoyloxy)tributylstannan
4342-36-3

(Benzoyloxy)tributylstannan

D

cyclopenta-1,3-diene
542-92-7

cyclopenta-1,3-diene

Conditions
ConditionsYield
In toluene molar ratio Cp2V/Sn-compound 1/1, sealed ampoule, 20°C, 24 h; ppt. of V-complex washing (toluene), drying; elem. anal.; solvent removal, fractioning;A n/a
B 67%
C 28%
D 37%
stannous fluoride

stannous fluoride

zirconium
7440-67-7

zirconium

A

tin
7440-31-5

tin

B

zirconium(IV) fluoride
851363-60-5, 7783-64-4

zirconium(IV) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of Zr with SnF2 (molar ratio SnF2:Zr=2.10) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 66.5%
B n/a
tetraethyltin
597-64-8

tetraethyltin

A

tin
7440-31-5

tin

B

ethane
74-84-0

ethane

C

ethene
74-85-1

ethene

D

n-butane
106-97-8

n-butane

Conditions
ConditionsYield
byproducts: H2; 400°C for 4 h in closed tube;A n/a
B 57%
C 4%
D 21.5%
other Radiation; X-ray;
Irradiation (UV/VIS); 80°C;
tin(II) oxide

tin(II) oxide

Conditions
ConditionsYield
With sodium stannate(II) at 20℃; for 120h;54%
With sodium hydroxide In sodium hydroxide Electrochem. Process; Sn electrodeposition from soln. of SnO in 4 M NaOH on Sn working electrode; Pt counter electrode, Ag/AgCl/satd. KCl reference eelctrode;
With silicon In neat (no solvent) Electric Arc; redn. of SnO by Si;;
tri-n-butyl-tin hydride
688-73-3

tri-n-butyl-tin hydride

13,13-Dimethyl-1,10-diphenyl-13-silatricyclo<8.2.1.0Δ2,9>trideca-11-en
86840-61-1

13,13-Dimethyl-1,10-diphenyl-13-silatricyclo<8.2.1.0Δ2,9>trideca-11-en

A

tin
7440-31-5

tin

B

bis(tri-n-butyltin)
813-19-4

bis(tri-n-butyltin)

C

tetra-n-butyltin(IV)
1461-25-2

tetra-n-butyltin(IV)

D

(tri(n-butyl)stannyl)dimethylsilane
27490-31-9

(tri(n-butyl)stannyl)dimethylsilane

Conditions
ConditionsYield
In neat (no solvent) (Ar); 2.5 h at 200°C; dissolved (C6D6); Sn septd.; not isolated; detected by NMR; gas chromatography;A 14%
B 10%
C <1
D 45%
carbon oxide sulfide
463-58-1

carbon oxide sulfide

bis(bis(trimethylsilyl)amido)tin(II)
55147-78-9

bis(bis(trimethylsilyl)amido)tin(II)

A

tin
7440-31-5

tin

B

Sn4(μ4-O)(μ2-OSiMe3)5(η1-N=C=S)
1257217-06-3

Sn4(μ4-O)(μ2-OSiMe3)5(η1-N=C=S)

Conditions
ConditionsYield
In hexane byproducts: ((CH3)3Si)2NH, (CH3)3SiOSi(CH3)3, (CH3)3SiNCS; (Ar); soln. of tin complex in hexane was placed in bomb at -100°C, OCS was added, stirred and warmed to 25°C, stirred overnight; cooled to -78°C excess OCS was removed in vac., filtered, washed with pentane, crystal were obtained from filtrate, elem. anal.;A n/a
B 39%
stannous fluoride

stannous fluoride

vanadium
7440-62-2

vanadium

A

tin
7440-31-5

tin

B

vanadium(III) fluoride
10049-12-4

vanadium(III) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of V with SnF2 (molar ratio SnF2:V=2.68) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 21.6%
B n/a
stannous fluoride

stannous fluoride

niobium

niobium

A

tin
7440-31-5

tin

B

niobium pentafluoride
7783-68-8

niobium pentafluoride

Conditions
ConditionsYield
In melt placing of mixt. of Nb with SnF2 (molar ratio SnF2:Nb=6.42) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 19.8%
B n/a
stannous fluoride

stannous fluoride

titanium
7440-32-6

titanium

A

tin
7440-31-5

tin

B

titanium(IV) fluoride
7783-63-3

titanium(IV) fluoride

Conditions
ConditionsYield
In melt Kinetics; placing of mixt. of Ti with SnF2 (molar ratio SnF2:Ti=4.04) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 230°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 13.8%
B n/a
tantalum

tantalum

stannous fluoride

stannous fluoride

A

tin
7440-31-5

tin

B

tantalum pentafluoride
7783-71-3

tantalum pentafluoride

Conditions
ConditionsYield
In melt placing of mixt. of Ta with SnF2 (molar ratio SnF2:Ta=1.46) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 9.2%
B n/a
chromium(0) hexacarbonyl
199620-14-9, 13007-92-6

chromium(0) hexacarbonyl

[2.2.2]cryptande
23978-09-8

[2.2.2]cryptande

tin(ll) chloride

tin(ll) chloride

A

tin
7440-31-5

tin

B

2K(1+)*2C18H36N2O6*Cl2Sn(Cr(CO)5)2(2-)={K(C18H36N2O6)}2(Cl2Sn(Cr(CO)5)2)

2K(1+)*2C18H36N2O6*Cl2Sn(Cr(CO)5)2(2-)={K(C18H36N2O6)}2(Cl2Sn(Cr(CO)5)2)

C

2K(1+)*2C18H36N2O6*Sn6(Cr(CO)5)6(2-)={K(C18H36N2O6)}2Sn6(Cr(CO)5)6

2K(1+)*2C18H36N2O6*Sn6(Cr(CO)5)6(2-)={K(C18H36N2O6)}2Sn6(Cr(CO)5)6

Conditions
ConditionsYield
With KC8 In tetrahydrofuran add. of Cr(CO)6 to a suspension of KC8 under Ar at -70°C, stirring (-70°C, 1 h; 0°C, 2 h), addn. of anhydr. SnCl2 at -70°C, addn. of cryptand after 0.5 h stirring, warming to 0°C; filtn. through Kieselgur, concg. in high-vac., layering (15°C, Et2O, pentane), after 7 days Sn seperates;A n/a
B n/a
C 7%
stannous fluoride

stannous fluoride

chromium
7440-47-3

chromium

A

tin
7440-31-5

tin

B

chromium(III) fluoride
7788-97-8

chromium(III) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of Cr with SnF2 (molar ratio SnF2:Cr=2.05) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.75 h at 230°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 6.8%
B n/a
cassiterite

cassiterite

Conditions
ConditionsYield
In melt in presence of WO3;1.5%
In melt in presence of WO3;1.5%
With anthracite 850-900°C;
stannous fluoride

stannous fluoride

aluminium
7429-90-5

aluminium

A

tin
7440-31-5

tin

B

aluminum(III) fluoride
7784-18-1

aluminum(III) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of Al with SnF2 (molar ratio SnF2:Al=1.65) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 250°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 1.5%
B n/a
oxygen
80937-33-3

oxygen

tin(II) oxide

tin(II) oxide

A

tin
7440-31-5

tin

B

tin(IV) oxide

tin(IV) oxide

Conditions
ConditionsYield
SnO was oxidized at 612-1030 K;A 1%
B n/a
methyl bromide
74-83-9

methyl bromide

tetramethylstannane
594-27-4

tetramethylstannane

Conditions
ConditionsYield
With {(C2H5)4N}Br In acetonitrile Electrolysis; Sn-cathode, 50°C;100%
With {(C2H5)4N}Br In acetonitrile Electrolysis; Sn-cathode, 50°C;100%
In water; acetonitrile Electrolysis; Sn-cathode, Pt-anode, 0.25 M Et4NClO4 in MeCN/water=7:1, 25°C, 10mA/cm**(-2); gas chromy.;
nickel
7440-02-0

nickel

sulfur
7704-34-9

sulfur

1,2-diaminopropan
78-90-0, 10424-38-1

1,2-diaminopropan

[Ni(1,2-diaminopropane)3]2Sn2S6*2H2O

[Ni(1,2-diaminopropane)3]2Sn2S6*2H2O

Conditions
ConditionsYield
In further solvent(s) High Pressure; prepd. under solvothermal conditions; reactants weighted in ratio of 1 Ni:1 Sn:3 S, heated in sealed Teflon-lined steel autoclave in pure 1,2-diaminopropane for 7 d at 140°C; elem. anal.;100%
selenium
7782-49-2

selenium

caesium selenide

caesium selenide

phosphorus

phosphorus

P4Se12Sn(4-)*4Cs(1+)

P4Se12Sn(4-)*4Cs(1+)

Conditions
ConditionsYield
at 250 - 650℃; for 20h; Sealed tube;100%
germanium
7440-56-4

germanium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.4Sn0.4Sb0.13Te

Ge0.4Sn0.4Sb0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0286Sn0286In0143Sb0143Te

Ge0286Sn0286In0143Sb0143Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.72Sn0.08In0067Sb0067Te

Ge0.72Sn0.08In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.24Sn0.56In0067Sb0067Te

Ge0.24Sn0.56In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.08Sn0.72In0067Sb0067Te

Ge0.08Sn0.72In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.4Sn0.4In0067Sb0067Te

Ge0.4Sn0.4In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.35Sn0.35In0.1Sb0.1Te

Ge0.35Sn0.35In0.1Sb0.1Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.5Sn0.5InSbTe4

Ge0.5Sn0.5InSbTe4

Conditions
ConditionsYield
at 550 - 950℃; for 240h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

GeSnInSbTe5

GeSnInSbTe5

Conditions
ConditionsYield
at 350 - 950℃; for 240h; Inert atmosphere;100%
antimony
7440-36-0

antimony

tellurium

tellurium

Sn0.8Sb0.13Te

Sn0.8Sb0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Sn0.8In0067Sb0067Te

Sn0.8In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

tellurium

tellurium

Ge0.4Sn0.4In0.13Te

Ge0.4Sn0.4In0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
bismuth
7440-69-9

bismuth

lithium sulfide

lithium sulfide

sulfur
7704-34-9

sulfur

Li0.97Sn2.06Bi4.97S10

Li0.97Sn2.06Bi4.97S10

Conditions
ConditionsYield
Stage #1: bismuth; tin; lithium sulfide; sulfur at 800℃; under 0.00150015 Torr; for 10h; Inert atmosphere; Glovebox; Sealed tube;
Stage #2: at 800℃; for 26h;
100%
1-methyl-3-octylimidazolium tribromide
1337952-48-3

1-methyl-3-octylimidazolium tribromide

1-methyl-3-octylimidazolium tribromidostannate(II)

1-methyl-3-octylimidazolium tribromidostannate(II)

Conditions
ConditionsYield
at 125℃; for 72h; Schlenk technique;100%
n-Butyl chloride
109-69-3

n-Butyl chloride

A

dibutyltin chloride
683-18-1

dibutyltin chloride

B

tributyltin chloride
1461-22-9

tributyltin chloride

Conditions
ConditionsYield
With catalyst: dicyclohexyl-18-crown-6/n-C4H9I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;;A 99%
B 1%
With catalyst: dibenzo-18-crown-6/n-C4H9I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;;A 98%
B 2%
With catalyst: dibenzo-18-crown-6/n-C8H17I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;;A 98%
B 2%
iodine
7553-56-2

iodine

tin(II) iodide

tin(II) iodide

Conditions
ConditionsYield
With hydrogenchloride In water at 170℃; Inert atmosphere;99%
1260°C;
I2 in H2 stream;
trifluorormethanesulfonic acid
1493-13-6

trifluorormethanesulfonic acid

dimethyl sulfoxide
67-68-5

dimethyl sulfoxide

tin(IV) triflate - dimethylsulfoxide (1/6.1)

tin(IV) triflate - dimethylsulfoxide (1/6.1)

Conditions
ConditionsYield
With oxygen In dimethyl sulfoxide metal. Sn under O2 atm. treated with DMSO and triflic acid (4 equiv.) in3 portions, heated at 100°C for 24 h;99%
bis(trifluoromethanesulfonyl)amide
82113-65-3

bis(trifluoromethanesulfonyl)amide

dimethyl sulfoxide
67-68-5

dimethyl sulfoxide

tin(IV) triflimidate - dimethylsulfoxide (1/7.9)

tin(IV) triflimidate - dimethylsulfoxide (1/7.9)

Conditions
ConditionsYield
With oxygen In dimethyl sulfoxide metal. Sn under O2 atm. treated with DMSO and triflimidic acid (4 equiv.) in 3 portions, heated at 100°C for 7 h;99%
selenium
7782-49-2

selenium

barium
7440-39-3

barium

Ba2SnSe5

Ba2SnSe5

Conditions
ConditionsYield
In neat (no solvent) mixt. of Ba, Sn, Se in stoich. ratio 2:1:5 was placed into fused silica tube; sealed under vac.; put into furnace; heated to 750°C within3 ds; kept at 750°C for 4 ds; cooled to 700°C within 10 m in; annealed at 650°C for 4 ds; cooled to room temp. within 4 ds;99%
Stage #1: selenium; tin; barium at 750℃; for 150h; Sealed tube;
Stage #2: at 650℃; for 100h;
samarium
7440-19-9

samarium

nickel
7440-02-0

nickel

Sm2NiSn4

Sm2NiSn4

Conditions
ConditionsYield
In neat (no solvent, solid phase) mixt. of Sm, Ni, Sn loaded into Ta tube, heated at 970°C for 36 h, quenched in water, annealed at 700°C for 15 d;99%
In neat (no solvent, solid phase) mixt. of Sm, Ni, Sn loaded into Nb tube, heated under dynamic vac. at 300°C for 1 d, heated at 950°C for 5 d, cooled to room temp.at 15°C/h;
o-tetrachloroquinone
2435-53-2

o-tetrachloroquinone

tetraethylammonium bromide
71-91-0

tetraethylammonium bromide

N(C2H5)4(1+)*SnBr(O2C6Cl4)2(1-)={(C2H5)4N}{SnBr(O2C6Cl4)2}

N(C2H5)4(1+)*SnBr(O2C6Cl4)2(1-)={(C2H5)4N}{SnBr(O2C6Cl4)2}

Conditions
ConditionsYield
In toluene; acetonitrile under dry N2, finely divided metal and o-quinone refluxed in toluene (24 h), filtration, addn. of Et4NBr in minimum amount of CH3CN (light-brown solid deposit), stirred (2 h, room temp.), addn. of diethyl ether, pptn.; filtration, evapn.; elem. anal.;99%
o-tetrachloroquinone
2435-53-2

o-tetrachloroquinone

tetraphenyl phosphonium chloride
2001-45-8

tetraphenyl phosphonium chloride

P(C6H5)4(1+)*SnCl(O2C6Cl4)2(1-)={P(C6H5)4}{SnCl(O2C6Cl4)2}

P(C6H5)4(1+)*SnCl(O2C6Cl4)2(1-)={P(C6H5)4}{SnCl(O2C6Cl4)2}

Conditions
ConditionsYield
In toluene; acetonitrile under dry N2, finely divided metal and o-quinone refluxed in toluene (24 h), filtration, addn. of Ph4PCl in minimum amount of CH3CN (light-brown solid deposit), stirred (2 h, room temp.), addn. of diethyl ether, pptn.; filtration, evapn.; elem. anal.;99%
2-methoxy-ethanol
109-86-4

2-methoxy-ethanol

Sn(2+)*2OC2H4OCH3(1-)=Sn(OC2H4OCH3)2

Sn(2+)*2OC2H4OCH3(1-)=Sn(OC2H4OCH3)2

Conditions
ConditionsYield
With lithium chloride In further solvent(s) Electrolysis; (N2 or Ar); using of Sn as anode and stainless steel plate as cathode; electrolysis for 1-1.5 h with soln. of electrolyte LiCl in MeOCH2CH2OH; removal of methyl cellosolve in vac., sepn. from LiCl by extn. with toluene; distn. in vac.; elem. anal.;99%
Electrochem. Process; Dissolution of Sn anode at 110-220 V and 0.2-0.5 A.; Elem. anal.;
selenium
7782-49-2

selenium

caesium selenide

caesium selenide

arsenic trisulfide

arsenic trisulfide

2Cs(1+)*SnAs2Se9(2-)=Cs2SnAs2Se9

2Cs(1+)*SnAs2Se9(2-)=Cs2SnAs2Se9

Conditions
ConditionsYield
In neat (no solvent) mixt. Cs2Se, Sn, As2S3, and Se was heated at 500°C for 4 days andthen cooled to 250°C at rate 5°C/h followeed by rapid coo ling to room temp.; products were washed with DMF and ether;99%
In neat (no solvent) mixt. Cs2Se, Sn, As2S3, and Se was heated at 550°C for 4 days andthen cooled to 250°C at rate 5°C/h followeed by rapid coo ling to room temp.; products were washed with DMF and ether;
Conditions
ConditionsYield
at 399.84 - 699.84℃; for 408h; Sealed tube;98%
In melt sealed in evacuated quartz ampoule; placed in vertical furnace; heated to 1150°C at 40°C/h; kept for 24 h, cooled at 10°C/hto 800°C, at 1°C/h to 640°C, to 500°C at 5. degree.C/h, annealed for 120 h;
In neat (no solvent) vac; 1350 K;
iodine
7553-56-2

iodine

2-Aminophenyl disulfide
1141-88-4

2-Aminophenyl disulfide

Sn(SC6H4NH2-o)3I
369361-53-5

Sn(SC6H4NH2-o)3I

Conditions
ConditionsYield
In toluene 1.5 equiv. of disulfide, 0.5 equiv. of I2 and Sn metal were refluxed in toluene for 4 h; mixt. was filtered through Celite, soln. was concd. in vac., cooled in ice-bath, solid was filtered off, washed with petroleum ether (60-80 °C), dried in vac., elem. anal.;98%

7440-31-5Relevant articles and documents

Gutmann, V.

, (1955)

Bimodal microstructure and reaction mechanism of Ti2SnC synthesized by a high-temperature reaction using Ti/Sn/C and Ti/Sn/TiC powder compacts

Li, Shi-Bo,Bei, Guo-Ping,Zhai, Hong-Xiang,Zhou, Yang

, p. 3617 - 3623 (2006)

High purity of titanium tin carbide (Ti2SnC) powder was fabricated by pressureless sintering two types of mixtures of Ti/Sn/C and Ti/Sn/TiC powders under different conditions. A bimodal microstructure of Ti2SnC with plate-like and rod-like forms was first observed, which is determined by the grain growth rate in different planes, the C particle's size, and the growth environment. Based on the microstructure observation, a reaction model was proposed to understand the reaction mechanism for the formation of Ti2SnC. Further investigation of the thermal stability of Ti2SnC demonstrates that Ti2SnC decomposes to TiC and Sn in vacuum atmosphere at 1250 C.

Electrochemical nitriding of Sn in LiCl-KCl-Li3N systems

Goto, Takuya,Ito, Yasuhiko

, p. 418 - 421 (2005)

Electrochemical nitriding of a liquid phase tin metal has experimentally been confirmed by using the oxidation of nitride ions in molten LiCl-KCl-Li 3N melts according to the following reactions:N3-=Nads+3e-Nads+Sn= SnNx From the XPS analysis, N 1s signal and Sn 3d signals are observed, which corresponds to the formation of SnNx, after conducting argon ion sputtering for 1000 s. This showed that a thick and stable nitride film was formed by electrochemical nitriding.

Thermolysis specifics of Tin(IV) and Tin(II) complex derivatives: Thermolysis of (Acac)2SnX2 (X = Cl, N3), (CO)5MSnCl2(thf) (M = Cr, Mo, W), (CO) 5MSn(Acac)2, (CO)5MSn

Dobrokhotova,Koroteev,Novotortsev,Egorov,Nefedov

, p. 1109 - 1119 (2007)

Differential scanning calorimetry and thermogravimetry are used to study the thermolysis of following complexes: (Acac)2Sn(N3)Cl (1); (Acac)2SnCl2 (2); (CO)5MSn(Acac) 2 with M = Cr (3) or W

Development of lead free pulse electrodeposited tin based composite solder coating reinforced with ex situ cerium oxide nanoparticles

Sharma, Ashutosh,Bhattacharya, Sumit,Das, Siddhartha,Fecht,Das, Karabi

, p. 609 - 616 (2013)

Pure Sn and Sn-CeO2 nanocomposite films have been pulse electrodeposited from an aqueous electrolyte containing stannous chloride (SnCl2-2H2O) and triammonium citrate (C6H 17N3O7). The codeposition is achieved by adding different amounts of ball milled CeO2 nanopowders (1-30 g/L) with a mean particle size of ~30 nm to the electrolyte. Microstructural characterizations have been carried out by X-ray diffraction analysis, scanning electron microscopy coupled with an energy dispersive spectroscopy, and transmission electron microscopy. The microstructural observations show that a uniform microstructure is obtained at a concentration of ~6 wt% CeO 2 in the deposits corresponding to 15 g/L CeO2 in electrolyte. Thus, incorporation of an optimum amount of CeO2 in a composite provides better mechanical, and wear and friction properties, without sacrificing the electrical resistivity significantly.

Electrodeposited tin coating as negative electrode material for lithium-ion battery in room temperature molten salt

Fung,Zhu

, p. A319-A324 (2002)

A new room temperature molten salt (RTMS) [1-methyl-3-ethylimidazolium/AlCl3/SnCl2 (3:2:0.5)] was developed for depositing tin on a copper electrode. Different tin crystallites were deposited at different temperatures, giving widely different performances of the assembled lithium cell [Sn (Cu)/LiCl buffered MEICl-AlCl3 RTMS/lithium]. Tin film deposited at 50°C or higher gave a more desirable crystal structure and an improved performance than films obtained at lower temperatures. Both cyclic voltammetry and galvanostatic cycling show the formation of three major lithium-tin alloy phases corresponding to the phase transition of LiSn/Li7Sn3, Li13Sn5/Li7Sn2, and Li7Sn2/Li22Sn5. Increases in the charging and discharging capacities were found with the deposition of higher lithium-rich tin alloys, though at the degradation of the irreversible capacity at the first cycle. The discharging capacity decreased rapidly, producing loose, expanded, and irregular crystallites upon cycling at a high current density (cd) (1.0 mA/cm2). However, an average capacity of 140 mAh/g, coulombic efficiency around 85%, and more than 200 cycles were obtained at a low cd (0.4 mA/cm2). The improvement is attributed to the deposition of small and regular tin crystallites that allows reversible insertion and removal of lithium from a more stable crystal structure without a significant volume change during cycling.

Deventer, J. S. J. van

, p. 109 - 118 (1988)

Gibb, T.,Greenwood, N. N.,Mortimer, B.,McColm, I. J.

, p. 2819 - 2827 (1971)

The Chemical Preparation of Tin Organosol

Ichiba, Sumio,Ono, Hiroaki,Kawasaki, Shunji,Nakagawa, Sakae,Yamada, Masaaki

, p. 2837 - 2838 (1983)

A stable colloidal tin suspension in an organic solvent was prepared by the chemical reduction of tin(II) chloride with sodium tetrahydridoborate in the presence of a protective agent.The tin organosol was examined by means of the Moessbauer absorption spectra of 119Sn in the frozen solution and by means of an electron microscope.

Gauzzi, F.,Verdini, B.,Maddalena, A.,Principi, G.

, p. 1 - 8 (1985)

Chemical interaction of Cu-In, Cu-Sn, and Cu-Bi solid solutions with liquid Ga-In and Ga-Sn eutectics

Ancharov,Grigorieva,Tsybulya,Boldyrev

, p. 1058 - 1064 (2006)

The reactions of copper-based Cu-In, Cu-Sn, and Cu-Bi solid solutions with liquid Ga-In and Ga-Sn eutectics have been studied in situ by synchrotron x-ray diffraction. The results indicate that the dynamics of the process and the phase composition, grain

Organic compounds for preparing lustrous tin coatings

Medvedev,Makrushin,Dubenkov

, p. 1799 - 1803 (2002)

Organic compounds for preparing lustrous tin coatings were selected taking into account their ionization potential. The best electrolyte composition for plating these coatings was determined.

Deseda, M. A.,Hume, D. N.,Glamm, A. C.,Ford, D. D. de

, p. 983 - 984 (1953)

MOESSBAUER SPECTROSCOPY OF ELECTRODEPOSITED TIN-NICKEL ALLOYS AND THERMALLY PREPARED Ni3Sn2, NiSn, and Ni3Sn4.

Leidheiser Jr.,Czako-Nagy,Varsanyi,Vertes

, p. 204 - 208 (1979)

Stoichiometric mixtures equivalent to Ni//3Sn//4, NiSn, and Ni//3Sn//2 were prepared from the melt. The value of the isomer shift, characteristic of the s-electron density at the tin nucleus, was a linear function of the tin concentration, decreasing with increase in nickel concentration. Electrodeposited NiSn yielded a Moessbauer spectrum similar to the thermally prepared material. Alloys containing more than 50 atomic percent (a/o) tin electrodeposited on copper substrates yielded Moessbauer spectra in which elemental tin, a nickel-tin alloy, and a copper-tin alloy were detected. The relative amounts of the constituents varied with the composition of the deposit. No copper-tin intermetallic compound is observed when the deposited alloy had compositions approximating NiSn.

Shmirous, K.

, (1954)

Photoionization mass spectrometric study of neutral species from pulsed laser ablation of SnO2

Reid

, p. 517 - 523 (1999)

We report the application of vacuum ultraviolet (VUV) photoionization mass spectrometry (PIMS) to probe neutral species generated in the 532 nm laser ablation of sintered SnO2 targets. The major (>90%) Sn containing species are of composition (SnO)x (x=1,2,3), with near-natural abundance isotopic distributions. The translational energy distribution was determined for each product and compared to a Maxwellian velocity distribution. The utility of VUV PIMS as a universal probe of neutral species produced in laser ablation is discussed.

Physicochemical and functional peculiarities of metal oxide whiskers

Goodilin,Pomerantseva,Semenenko,Kocherginskaya,Itkis,Kulova,Skundin,Leonova,Dobrovol'Skii, Yu. A.,Rumyantseva,Gas'Kov,Balakhonov,Churagulov,Tretyakova, Yu. D.

, p. 1042 - 1053 (2008)

Practical aspects of preparation and prospects for practical use of a series of the metal oxide whiskers were studied. The procedures for the synthesis were proposed, and the phase composition, micromorphology, and electrochemical and sensor characteristics of the macroscopic (up to 5-10 mm long) whiskers in the Ba-V-O, Ba-Mn-O, and Sn-O systems were analyzed. The electroconducting BaV8O21-δ whiskers were prepared by the hydrothermal treatment. These whiskers possess stable electrochemical characteristics appropriate for the development of novel secondary current sources. The protonated form of the Ba6Mn24O48 whiskers produced by the isothermal vaporization of chloride fluxes is a mixed conductor with the proton and electron conductivity at a level of mS units at 25 °C. A new procedure by the thermal disproportionation of tin(ii) oxide under nitrogen was proposed for the growth of SnO2 whiskers of various morphology. The produced whiskers have substantial sensor sensitivity toward a series of toxic components of the gaseous medium, such as nitrogen dioxide.

Synthesis and stability of Sn(II)-containing perovskites: (Ba,SnII)HfIVO3 versus (Ba,SnII)SnIVO3

Broughton, Rachel,Gabilondo, Eric A.,Jones, Jacob L.,Maggard, Paul A.,O'Donnell, Shaun

, (2021)

While Sn(II)-containing perovskite oxides have long drawn attention as Pb(II) substitutes in technologically-relevant dielectric materials, they are also highly thermodynamically unstable and potentially impossible to prepare. Investigations into the new flux-mediated syntheses of metastable Sn(II)-containing hafnate and stannate perovskites were aimed at understanding the key factors related to their synthesizability. The BaHfO3 perovskite was reacted with SnClF from 250 to 350 ?°C for 12–72 ?h, yielding an unprecedented Sn(II) concentration on the A-site of up to ~70 ?mol%, i.e., (Ba0.3Sn0.7)HfO3 in high purity. Elemental mapping using EDS shows the Sn(II) cations diffuse gradually throughout the crystallites, with two reaction cycles needed to give a nearly homogeneous distribution. In contrast, similar reactions with BaSnO3 and as little as 10 ?mol% Sn(II) result in decomposition to SnO, SnO2, and BaSnO3. The (Ba1-xSnx)HfO3 compositions exhibit a primary cubic perovskite structure (Pm3ˉm; for x ?= ?1/3, 1/2 and 2/3) by powder X-ray diffraction (XRD) methods, with the Sn(II) cations substituted on the A-site. Total energy calculations show the thermodynamic instability versus the ground state (i.e., metastability) for (Ba1-xSnx)HfO3 increases with Sn(II) substitution, reaching a maximum of ~446 ?meV atom?1 at ~70 ?mol% Sn(II). The decomposition pathway of (Ba1/3Sn2/3)HfO3 was probed by ex situ XRD as well as in situ electron microscopy methods. An onset of thermally-induced decomposition begins at ~350–400 ?°C to give the more stable oxides which are found to segregate out in surface layers. These results help to elucidate the factors underpinning the synthesizability of highly metastable Sn(II)-containing perovskites, which increases with their cohesive energy and with the absence of lower-energy polymorphs or other ground states that can be reached without significant ion diffusion.

Electrodeposition of mesoporous tin films

Whitehead, Adam H.,Elliott, Joanne M.,Owen, John R.,Attard, George S.

, p. 331 - 332 (1999)

Mesoporous metallic tin has been electrodeposited, from the homogeneous hexagonal mesophase of a series of amphiphilic non-ionic surfactants, with a controllable repeat structure in the range of 5-10 nm.

An unexpected dependence on the SnII base; Reactions of Sn(NR2)2 with aromatic dithiols

Melen, Rebecca L.,McPartlin, Mary,Wright, Dominic S.

, p. 1649 - 1651 (2011)

Unexpectedly, the reactions of the SnII base Sn(NMe 2)2 with 1,2-benzodithiols [L(SH)2] do not give the stannylenes, L(S)2Sn, which are generated with Sn{N(SiMe 3)2}2, instead the ion-separated Sn IV compounds [Sn{L(S)2}]2- 2[R 2NH2]+ are formed in high yields.

Structural and morphological modifications of a nanosized 62 atom percent Sn-Ni thin film anode during reaction with lithium

Mukaibo, Hitomi,Momma, Toshiyuki,Mohamedi, Mohamed,Osaka, Tetsuya

, p. A560-A565 (2005)

Nanosized electrodeposited 62 atom % Sn-Ni alloy was tested to highlight the effects of volume changes on the cycling life of the electrode during lithiation and delithiation. X-ray diffraction showed that the Ni 3Sn4 was the main phase of the as-deposited alloy. A unique feature of the 62 atom % Sn-Ni is that it exhibited a capacity recovery upon cycling. When cycled galvanostatically, the Sn62Ni38 offers low capacity fade while reversibly incorporating lithium up to 600 mAh/g. At the first charge LiSn alloy phases are formed. This led to volume expansion of the electrode causing the formation of cracks. At the following cycles the Ni3Sn4, phase was restored and preserved over extensive cycling revealing the reversibility of the reaction between Ni 3Sn4, and Li+. As to the reasons of the capacity recovery noticed with this alloy, scanning electron microscopy images provided evidence of modifications of the surface condition accompanying a volume change during cycling. The chemical diffusion coefficient (D Li) value determined from electrochemical impedence spectroscopy measurements during lithium insertion was within 10-9 to 10 -10 cm2 s-1.

Electrodeposition of Ni, Sn and Ni-Sn alloy coatings from pyrophosphate-glycine bath

Lacnjevac,Jovic,Jovic

, p. D310-D318 (2012)

In this work the electrodeposition of Ni, Sn and Ni-Sn alloy from the solution containing pyrophosphate andor glycine has been investigated by cyclic voltammmetry (CV), potentiostatic pulse and polarization curve measurements on two substrates, Ni and GC.

Superconducting proximity effect in single-crystal Sn nanowires

Liu, Haidong,Ye, Zuxin,Zhang, Hong,Wu, Wenhao,Luo, Zhiping,Rathnayaka,Naugle

, p. 1542 - 1543 (2008)

An in situ template-based electrochemical method was used to fabricate single-crystal Sn nanowires, of 6 μm in length and 30-200 nm in diameter, in contact with two bulk film electrodes of Au, Sn, or Pb. Superconductivity in these Sn nanowires was found t

Colin, R.,Drowart, J.

, p. 1120 - 1125 (1962)

Structure and applications of organotin complex based on trimethyltin cation and quinaldic acid

El-bendary, Mohamed M.,Etaiw, Safaa El-din H.

, (2018)

The reaction between aqueous solution of Me3SnCl and acetonitrile solution of quinaldic acid (quinH) at room temperature affords a new organotin complex, [Me3Sn(quinH)(quin)]?6H2O (1). Complex 1 was structurally characterized using infrared, UV–visible and NMR spectra, thermogravimetric analysis and single-crystal X-ray analysis. The network structure of 1 is developed by a limitless number of discrete mononuclear molecules forming a one-dimensional chain via hydrogen bonds. Extensive hydrogen bonds and π–π stacking associate the one-dimensional chains creating a two-dimensional array. The two-dimensional arrays are additionally associated via hydrogen bonds through the water molecules and the methyl groups forming a three-dimensional network. The cytotoxic impact of 1 on the viability of MCF-7 cells was also examined using MTT assay, exhibiting great inhibiting action against MCF-7 cells. Furthermore, the catalytic degradation performance of 1 towards methylene blue dye in the presence of H2O2 as oxidant was investigated. The reaction is first order with respect to methylene blue dye.

Acid–Base Interaction Enhancing Oxygen Tolerance in Electrocatalytic Carbon Dioxide Reduction

Li, Pengsong,Lu, Xu,Malpass-Evans, Richard,McKeown, Neil B.,Sun, Xiaoming,Wang, Hailiang,Wu, Yueshen,Wu, Zishan

supporting information, p. 10918 - 10923 (2020/04/27)

Hybrid electrodes with improved O2 tolerance and capability of CO2 conversion into liquid products in the presence of O2 are presented. Aniline molecules are introduced into the pore structure of a polymer of intrinsic microporosity to expand its gas separation functionality beyond pure physical sieving. The chemical interaction between the acidic CO2 molecule and the basic amino group of aniline renders enhanced CO2 separation from O2. Loaded with a cobalt phthalocyanine-based cathode catalyst, the hybrid electrode achieves a CO Faradaic efficiency of 71 percent with 10 percent O2 in the CO2 feed gas. The electrode can still produce CO at an O2/CO2 ratio as high as 9:1. Switching to a Sn-based catalyst, for the first time O2-tolerant CO2 electroreduction to liquid products is realized, generating formate with nearly 100 percent selectivity and a current density of 56.7 mA cm?2 in the presence of 5 percent O2.

Synthesis, characterization of active Sn(0), and its application in selective propargylation of aldehyde at room temperature in water

Chatterjee, Paresh Nath,Paul, Dipankar,Sawkmie, Micky Lanster,Sinha, Arun Kumar,Khatua, Snehadrinarayan

supporting information, p. 29 - 36 (2019/01/10)

Active Sn(0) particles are synthesized in high yields by the chemical reduction of the blue-black stannous oxide using freshly prepared sodium stannite solution as reducing agent at 40 °C and 60 °C. The Sn(0) particles are characterized using powder XRD, SEM, and DSC. The as-synthesized Sn(0) particles are applied as reagent for the regioselective synthesis of homopropargyl alcohols from propargyl bromide and aldehydes in distilled water at room temperature (in 50%-84% yields). No assistance of heat, microwave, ultrasound, organic co-solvent, co-reagent, or inert atmosphere is required for this reaction. The propargylation reaction is highly chemoselective towards aldehyde over other less electrophilic carbonyl functional groups such as ketone, amide, and carboxylic acid. Our in-house synthesized homopropargyl alcohols can be used to synthesize conjugated 1,3-diynes.

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