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7440-31-5 Usage

InChI:InChI=1/Sn

7440-31-5 Well-known Company Product Price

Brand (Code)Product description CAS number Packaging Price Detail
Alfa Aesar (41169)  Tin slug, 11mm (0.43in) dia x 2mm (0.1in) thick, Puratronic?, 99.995% (metals basis)    7440-31-5 10pc 1174.0CNY Detail
Alfa Aesar (41169)  Tin slug, 11mm (0.43in) dia x 2mm (0.1in) thick, Puratronic?, 99.995% (metals basis)    7440-31-5 50pc 5587.0CNY Detail
Alfa Aesar (14134)  Tin slug, 11mm (0.43in) dia x 4mm (0.2in) thick, Puratronic?, 99.999% (metals basis)    7440-31-5 10pc 1749.0CNY Detail
Alfa Aesar (14134)  Tin slug, 11mm (0.43in) dia x 4mm (0.2in) thick, Puratronic?, 99.999% (metals basis)    7440-31-5 50pc 6431.0CNY Detail
Alfa Aesar (43416)  Tin slug, 6.35mm (0.25in) dia x 6.35mm (0.25in) length, Puratronic?, 99.995% (metals basis)    7440-31-5 25g 718.0CNY Detail
Alfa Aesar (43416)  Tin slug, 6.35mm (0.25in) dia x 6.35mm (0.25in) length, Puratronic?, 99.995% (metals basis)    7440-31-5 100g 2207.0CNY Detail
Alfa Aesar (40898)  Tin sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick, 99.995% (metals basis)    7440-31-5 1each 2519.0CNY Detail
Alfa Aesar (40899)  Tin sputtering target, 50.8mm (2.0in) dia x 6.35mm (0.250in) thick, 99.995% (metals basis)    7440-31-5 1each 2920.0CNY Detail
Alfa Aesar (40900)  Tin sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.125in) thick, 99.995% (metals basis)    7440-31-5 1each 3332.0CNY Detail
Alfa Aesar (40901)  Tin sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.250in) thick, 99.995% (metals basis)    7440-31-5 1each 2511.0CNY Detail
Alfa Aesar (10789)  Tin foil, 0.025mm (0.001in) thick, hard, 99.9% (metals basis)    7440-31-5 15x15cm 222.0CNY Detail
Alfa Aesar (10789)  Tin foil, 0.025mm (0.001in) thick, hard, 99.9% (metals basis)    7440-31-5 15x75cm 442.0CNY Detail

7440-31-5SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 16, 2017

Revision Date: Aug 16, 2017

1.Identification

1.1 GHS Product identifier

Product name tin atom

1.2 Other means of identification

Product number -
Other names wang

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:7440-31-5 SDS

7440-31-5Synthetic route

2C6H18NSi2(1-)*C12H22N2Si2(2-)*2Sn(2+)

2C6H18NSi2(1-)*C12H22N2Si2(2-)*2Sn(2+)

tin(ll) chloride

tin(ll) chloride

A

tin
7440-31-5

tin

B

{((CH3)3Si)2NSnCl2NSi(CH3)3}2C6H4
157201-33-7

{((CH3)3Si)2NSnCl2NSi(CH3)3}2C6H4

Conditions
ConditionsYield
In diethyl ether; benzene-d6 7 d at 20°C;A n/a
B 100%
tin(IV) oxide

tin(IV) oxide

Conditions
ConditionsYield
With aluminium In neat (no solvent) byproducts: Al2O3; reaction of SnO2 and Al to Sn and Al2O3 after passing in over a blower flame;;96%
With Al In neat (no solvent) byproducts: Al2O3; reaction of SnO2 and Al to Sn and Al2O3 after passing in over a blower flame;;96%
With carbon monoxide In neat (no solvent) intermediate formation of solid SnO at reduction with CO at 600-850°C;;
calcium metastannate

calcium metastannate

Conditions
ConditionsYield
With iron In not given pptn.; no Sb, no As, 0.16% Fe, 0.053% Al;95%
With Fe In not given pptn.; no Sb, no As, 0.16% Fe, 0.053% Al;95%
With hydrogenchloride; aluminium In hydrogenchloride leaching (HCl soln.) at ambient temp.; pptn. (Al plates); washing; melting; content: 0.89% Sb, 0.036% As, 0.022% Fe, 0.024% Al;94.5%
With HCl; Al In hydrogenchloride leaching (HCl soln.) at ambient temp.; pptn. (Al plates); washing; melting; content: 0.89% Sb, 0.036% As, 0.022% Fe, 0.024% Al;94.5%
stannous fluoride

stannous fluoride

Conditions
ConditionsYield
With chromium In melt byproducts: CrF2;95%
In hydrogen fluoride Electrolysis; Pt cathode, Sn anode; 29-30°C, 1 A/dm**2 with different additives;
With lithium fluoride In neat (no solvent) byproducts: Li3VF6; formation of Sn and Li3VF6 in a mixture with LiF with metallic V;;
sodium stannate(II)

sodium stannate(II)

tin(II) oxide

tin(II) oxide

Conditions
ConditionsYield
at 40℃; for 16h; Temperature;95%
vanadocene

vanadocene

dibutyltin dibenzoate
5847-54-1

dibutyltin dibenzoate

A

tin
7440-31-5

tin

B

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

C

(Benzoyloxy)tributylstannan
4342-36-3

(Benzoyloxy)tributylstannan

D

dibutyltin
1191-48-6

dibutyltin

E

cyclopenta-1,3-diene
542-92-7

cyclopenta-1,3-diene

Conditions
ConditionsYield
In toluene molar ratio Cp2V/Sn-compound 1/2, sealed ampoule, 20°C, 24 h;A n/a
B 94%
C n/a
D n/a
E 84%
3,4-dimercaptotoluene
496-74-2

3,4-dimercaptotoluene

tin(II) dimethylamide
55853-40-2

tin(II) dimethylamide

A

tin
7440-31-5

tin

[Me2NH2]2[Sn(toluene-3,4-dithiolato)3]

[Me2NH2]2[Sn(toluene-3,4-dithiolato)3]

Conditions
ConditionsYield
In tetrahydrofuran a soln. of Sn compd. added to a soln. of ligand at room temp.; filtered, crystd. at room temp. for 1 h; elem. anal.;A n/a
B 94%
1,2-dimethoxyethane
110-71-4

1,2-dimethoxyethane

ytterbium

ytterbium

diphenyltin(IV) dichloride
1135-99-5

diphenyltin(IV) dichloride

A

tin
7440-31-5

tin

B

YbCl2(tetrahydrofuran)2
145447-65-0

YbCl2(tetrahydrofuran)2

C

Yb2Cl2(CH3OCH2CH2OCH3)6(2+)*2((C6H5)3Sn)3Sn(1-)={Yb2Cl2(CH3OCH2CH2OCH3)6}{((C6H5)3Sn)3Sn}2

Yb2Cl2(CH3OCH2CH2OCH3)6(2+)*2((C6H5)3Sn)3Sn(1-)={Yb2Cl2(CH3OCH2CH2OCH3)6}{((C6H5)3Sn)3Sn}2

Conditions
ConditionsYield
In tetrahydrofuran absence of air; stirring (room temp., 12 h), evapn. (vac.), dissoln. in DME, then 10 h (room temp.); crystn. (-10°C, 24 h); elem. anal.;A 81.94%
B 92.54%
C 75.39%
phenyltin trichloride
1124-19-2

phenyltin trichloride

ytterbium

ytterbium

A

tin
7440-31-5

tin

bis(triphenylstannyl)tetrakis(tetrahydrofuran)ytterbium

bis(triphenylstannyl)tetrakis(tetrahydrofuran)ytterbium

C

YbCl2(tetrahydrofuran)2
145447-65-0

YbCl2(tetrahydrofuran)2

Conditions
ConditionsYield
With THF In tetrahydrofuran absence of air; stirring (room temp., 30 h); filtration off of YbCl2(THF)2 and Sn, evapn. (vac.), washing (hexane), recrystn. (THF);A 52.75%
B 65.59%
C 89.53%
bis(pentamethylcyclopentadienyl)Sn
68757-81-3

bis(pentamethylcyclopentadienyl)Sn

Conditions
ConditionsYield
With potassium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up K was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 45 min; no initial stannocene was observed after the reaction; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically;89%
With sodium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up Na was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 25 h; no initial stannocene was observed after the reaction; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically;81%
With lithium In tetrahydrofuran byproducts: pentamethylcyclopentadiene; a stoich. amt. of cut-up Li was added under Ar to a soln. of stannocene in THF, mixt. was stirred at room temp. for 7 d; 63% of initial material remained unchanged; solvent was evapd., residue was extd. with petroleum ether, ext. was analyzed for remaining stannocene by (1)H NMR, insoluble material was treated with MeOH, elemental Sn was filtered and dried, soln. was examined for C5Me5H spectroscopically;<1
sodium tetraphenyl borate
143-66-8

sodium tetraphenyl borate

tin(ll) chloride

tin(ll) chloride

Conditions
ConditionsYield
In 1,2-dimethoxyethane Irradiation (UV/VIS); under Ar; mole ratio NaBPh4 : SnCl2 = 2 : 1; irradn. (254 nm) for 8 h gave deposition of Sn; deposit sepd., washed with acetone and water, and dried in vac. to give pure Sn;80%
stannous fluoride

stannous fluoride

silicon
7440-21-3

silicon

A

tin
7440-31-5

tin

B

silicon tetrafluoride
7783-61-1

silicon tetrafluoride

Conditions
ConditionsYield
In melt placing of mixt. of Si with SnF2 (molar ratio SnF2:Si=2.00) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 250°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 76.8%
B n/a
trimethyltin(IV)chloride
1066-45-1

trimethyltin(IV)chloride

A

tin
7440-31-5

tin

B

hexamethyldistannane
661-69-8

hexamethyldistannane

C

trimethylstannane
1631-73-8

trimethylstannane

Conditions
ConditionsYield
With NdI2; THF In tetrahydrofuran Me3SnCl in THF added under stirring at -60°C to NdI2 in THF; warmed to room temp.; stirred for 30 min; filtered off; dried; dissolved in water again; analyzed by GLC;A 74%
B 11%
C 7%
tin(II) dimethylamide
55853-40-2

tin(II) dimethylamide

1,2-benzenedithiole
17534-15-5

1,2-benzenedithiole

A

tin
7440-31-5

tin

B

[Me2NH2]2[Sn(benzene-1,2-dithiolato)3]

[Me2NH2]2[Sn(benzene-1,2-dithiolato)3]

Conditions
ConditionsYield
In tetrahydrofuran a soln. of Sn compd. added to a soln. of ligand at -78°C; filtered, evapd. (vac.), dissolved in MeCN, crystd. at room temp. for 1 h; elem. anal.;A n/a
B 72%
vanadocene

vanadocene

dibutyltin dibenzoate
5847-54-1

dibutyltin dibenzoate

A

tin
7440-31-5

tin

B

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

2C5H5(1-)*2V(3+)*4OCOC6H5(1-) = [(C5H5)V(OCOC6H5)2]2

C

(Benzoyloxy)tributylstannan
4342-36-3

(Benzoyloxy)tributylstannan

D

cyclopenta-1,3-diene
542-92-7

cyclopenta-1,3-diene

Conditions
ConditionsYield
In toluene molar ratio Cp2V/Sn-compound 1/1, sealed ampoule, 20°C, 24 h; ppt. of V-complex washing (toluene), drying; elem. anal.; solvent removal, fractioning;A n/a
B 67%
C 28%
D 37%
stannous fluoride

stannous fluoride

zirconium
7440-67-7

zirconium

A

tin
7440-31-5

tin

B

zirconium(IV) fluoride
851363-60-5, 7783-64-4

zirconium(IV) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of Zr with SnF2 (molar ratio SnF2:Zr=2.10) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 66.5%
B n/a
tetraethyltin
597-64-8

tetraethyltin

A

tin
7440-31-5

tin

B

ethane
74-84-0

ethane

C

ethene
74-85-1

ethene

D

n-butane
106-97-8

n-butane

Conditions
ConditionsYield
byproducts: H2; 400°C for 4 h in closed tube;A n/a
B 57%
C 4%
D 21.5%
other Radiation; X-ray;
Irradiation (UV/VIS); 80°C;
tin(II) oxide

tin(II) oxide

Conditions
ConditionsYield
With sodium stannate(II) at 20℃; for 120h;54%
With sodium hydroxide In sodium hydroxide Electrochem. Process; Sn electrodeposition from soln. of SnO in 4 M NaOH on Sn working electrode; Pt counter electrode, Ag/AgCl/satd. KCl reference eelctrode;
With silicon In neat (no solvent) Electric Arc; redn. of SnO by Si;;
tri-n-butyl-tin hydride
688-73-3

tri-n-butyl-tin hydride

13,13-Dimethyl-1,10-diphenyl-13-silatricyclo<8.2.1.0Δ2,9>trideca-11-en
86840-61-1

13,13-Dimethyl-1,10-diphenyl-13-silatricyclo<8.2.1.0Δ2,9>trideca-11-en

A

tin
7440-31-5

tin

B

bis(tri-n-butyltin)
813-19-4

bis(tri-n-butyltin)

C

tetra-n-butyltin(IV)
1461-25-2

tetra-n-butyltin(IV)

D

(tri(n-butyl)stannyl)dimethylsilane
27490-31-9

(tri(n-butyl)stannyl)dimethylsilane

Conditions
ConditionsYield
In neat (no solvent) (Ar); 2.5 h at 200°C; dissolved (C6D6); Sn septd.; not isolated; detected by NMR; gas chromatography;A 14%
B 10%
C <1
D 45%
carbon oxide sulfide
463-58-1

carbon oxide sulfide

bis(bis(trimethylsilyl)amido)tin(II)
55147-78-9

bis(bis(trimethylsilyl)amido)tin(II)

A

tin
7440-31-5

tin

B

Sn4(μ4-O)(μ2-OSiMe3)5(η1-N=C=S)
1257217-06-3

Sn4(μ4-O)(μ2-OSiMe3)5(η1-N=C=S)

Conditions
ConditionsYield
In hexane byproducts: ((CH3)3Si)2NH, (CH3)3SiOSi(CH3)3, (CH3)3SiNCS; (Ar); soln. of tin complex in hexane was placed in bomb at -100°C, OCS was added, stirred and warmed to 25°C, stirred overnight; cooled to -78°C excess OCS was removed in vac., filtered, washed with pentane, crystal were obtained from filtrate, elem. anal.;A n/a
B 39%
stannous fluoride

stannous fluoride

vanadium
7440-62-2

vanadium

A

tin
7440-31-5

tin

B

vanadium(III) fluoride
10049-12-4

vanadium(III) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of V with SnF2 (molar ratio SnF2:V=2.68) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 21.6%
B n/a
stannous fluoride

stannous fluoride

niobium

niobium

A

tin
7440-31-5

tin

B

niobium pentafluoride
7783-68-8

niobium pentafluoride

Conditions
ConditionsYield
In melt placing of mixt. of Nb with SnF2 (molar ratio SnF2:Nb=6.42) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.50 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 19.8%
B n/a
stannous fluoride

stannous fluoride

titanium
7440-32-6

titanium

A

tin
7440-31-5

tin

B

titanium(IV) fluoride
7783-63-3

titanium(IV) fluoride

Conditions
ConditionsYield
In melt Kinetics; placing of mixt. of Ti with SnF2 (molar ratio SnF2:Ti=4.04) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 230°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 13.8%
B n/a
tantalum

tantalum

stannous fluoride

stannous fluoride

A

tin
7440-31-5

tin

B

tantalum pentafluoride
7783-71-3

tantalum pentafluoride

Conditions
ConditionsYield
In melt placing of mixt. of Ta with SnF2 (molar ratio SnF2:Ta=1.46) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 240°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 9.2%
B n/a
chromium(0) hexacarbonyl
199620-14-9, 13007-92-6

chromium(0) hexacarbonyl

[2.2.2]cryptande
23978-09-8

[2.2.2]cryptande

tin(ll) chloride

tin(ll) chloride

A

tin
7440-31-5

tin

B

2K(1+)*2C18H36N2O6*Cl2Sn(Cr(CO)5)2(2-)={K(C18H36N2O6)}2(Cl2Sn(Cr(CO)5)2)

2K(1+)*2C18H36N2O6*Cl2Sn(Cr(CO)5)2(2-)={K(C18H36N2O6)}2(Cl2Sn(Cr(CO)5)2)

C

2K(1+)*2C18H36N2O6*Sn6(Cr(CO)5)6(2-)={K(C18H36N2O6)}2Sn6(Cr(CO)5)6

2K(1+)*2C18H36N2O6*Sn6(Cr(CO)5)6(2-)={K(C18H36N2O6)}2Sn6(Cr(CO)5)6

Conditions
ConditionsYield
With KC8 In tetrahydrofuran add. of Cr(CO)6 to a suspension of KC8 under Ar at -70°C, stirring (-70°C, 1 h; 0°C, 2 h), addn. of anhydr. SnCl2 at -70°C, addn. of cryptand after 0.5 h stirring, warming to 0°C; filtn. through Kieselgur, concg. in high-vac., layering (15°C, Et2O, pentane), after 7 days Sn seperates;A n/a
B n/a
C 7%
stannous fluoride

stannous fluoride

chromium
7440-47-3

chromium

A

tin
7440-31-5

tin

B

chromium(III) fluoride
7788-97-8

chromium(III) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of Cr with SnF2 (molar ratio SnF2:Cr=2.05) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.75 h at 230°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 6.8%
B n/a
cassiterite

cassiterite

Conditions
ConditionsYield
In melt in presence of WO3;1.5%
In melt in presence of WO3;1.5%
With anthracite 850-900°C;
stannous fluoride

stannous fluoride

aluminium
7429-90-5

aluminium

A

tin
7440-31-5

tin

B

aluminum(III) fluoride
7784-18-1

aluminum(III) fluoride

Conditions
ConditionsYield
In melt placing of mixt. of Al with SnF2 (molar ratio SnF2:Al=1.65) in Fluoroplast-4 ampule, closing by screwed stopper, exposition for 1.00 h at 250°C; various product ratio yields for various conditions; cooling, stirring up in water, collection, drying;A 1.5%
B n/a
oxygen
80937-33-3

oxygen

tin(II) oxide

tin(II) oxide

A

tin
7440-31-5

tin

B

tin(IV) oxide

tin(IV) oxide

Conditions
ConditionsYield
SnO was oxidized at 612-1030 K;A 1%
B n/a
methyl bromide
74-83-9

methyl bromide

tetramethylstannane
594-27-4

tetramethylstannane

Conditions
ConditionsYield
With {(C2H5)4N}Br In acetonitrile Electrolysis; Sn-cathode, 50°C;100%
With {(C2H5)4N}Br In acetonitrile Electrolysis; Sn-cathode, 50°C;100%
In water; acetonitrile Electrolysis; Sn-cathode, Pt-anode, 0.25 M Et4NClO4 in MeCN/water=7:1, 25°C, 10mA/cm**(-2); gas chromy.;
nickel
7440-02-0

nickel

sulfur
7704-34-9

sulfur

1,2-diaminopropan
78-90-0, 10424-38-1

1,2-diaminopropan

[Ni(1,2-diaminopropane)3]2Sn2S6*2H2O

[Ni(1,2-diaminopropane)3]2Sn2S6*2H2O

Conditions
ConditionsYield
In further solvent(s) High Pressure; prepd. under solvothermal conditions; reactants weighted in ratio of 1 Ni:1 Sn:3 S, heated in sealed Teflon-lined steel autoclave in pure 1,2-diaminopropane for 7 d at 140°C; elem. anal.;100%
selenium
7782-49-2

selenium

caesium selenide

caesium selenide

phosphorus

phosphorus

P4Se12Sn(4-)*4Cs(1+)

P4Se12Sn(4-)*4Cs(1+)

Conditions
ConditionsYield
at 250 - 650℃; for 20h; Sealed tube;100%
germanium
7440-56-4

germanium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.4Sn0.4Sb0.13Te

Ge0.4Sn0.4Sb0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0286Sn0286In0143Sb0143Te

Ge0286Sn0286In0143Sb0143Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.72Sn0.08In0067Sb0067Te

Ge0.72Sn0.08In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.24Sn0.56In0067Sb0067Te

Ge0.24Sn0.56In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.08Sn0.72In0067Sb0067Te

Ge0.08Sn0.72In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.4Sn0.4In0067Sb0067Te

Ge0.4Sn0.4In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.35Sn0.35In0.1Sb0.1Te

Ge0.35Sn0.35In0.1Sb0.1Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Ge0.5Sn0.5InSbTe4

Ge0.5Sn0.5InSbTe4

Conditions
ConditionsYield
at 550 - 950℃; for 240h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

GeSnInSbTe5

GeSnInSbTe5

Conditions
ConditionsYield
at 350 - 950℃; for 240h; Inert atmosphere;100%
antimony
7440-36-0

antimony

tellurium

tellurium

Sn0.8Sb0.13Te

Sn0.8Sb0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
indium
7440-74-6

indium

antimony
7440-36-0

antimony

tellurium

tellurium

Sn0.8In0067Sb0067Te

Sn0.8In0067Sb0067Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
germanium
7440-56-4

germanium

indium
7440-74-6

indium

tellurium

tellurium

Ge0.4Sn0.4In0.13Te

Ge0.4Sn0.4In0.13Te

Conditions
ConditionsYield
at 590 - 900℃; for 120h; Inert atmosphere;100%
bismuth
7440-69-9

bismuth

lithium sulfide

lithium sulfide

sulfur
7704-34-9

sulfur

Li0.97Sn2.06Bi4.97S10

Li0.97Sn2.06Bi4.97S10

Conditions
ConditionsYield
Stage #1: bismuth; tin; lithium sulfide; sulfur at 800℃; under 0.00150015 Torr; for 10h; Inert atmosphere; Glovebox; Sealed tube;
Stage #2: at 800℃; for 26h;
100%
1-methyl-3-octylimidazolium tribromide
1337952-48-3

1-methyl-3-octylimidazolium tribromide

1-methyl-3-octylimidazolium tribromidostannate(II)

1-methyl-3-octylimidazolium tribromidostannate(II)

Conditions
ConditionsYield
at 125℃; for 72h; Schlenk technique;100%
n-Butyl chloride
109-69-3

n-Butyl chloride

A

dibutyltin chloride
683-18-1

dibutyltin chloride

B

tributyltin chloride
1461-22-9

tributyltin chloride

Conditions
ConditionsYield
With catalyst: dicyclohexyl-18-crown-6/n-C4H9I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;;A 99%
B 1%
With catalyst: dibenzo-18-crown-6/n-C4H9I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;;A 98%
B 2%
With catalyst: dibenzo-18-crown-6/n-C8H17I In N,N-dimethyl-formamide 120°C; 24 h; excess KI;; analyzed by GLC;;A 98%
B 2%
iodine
7553-56-2

iodine

tin(II) iodide

tin(II) iodide

Conditions
ConditionsYield
With hydrogenchloride In water at 170℃; Inert atmosphere;99%
1260°C;
I2 in H2 stream;
trifluorormethanesulfonic acid
1493-13-6

trifluorormethanesulfonic acid

dimethyl sulfoxide
67-68-5

dimethyl sulfoxide

tin(IV) triflate - dimethylsulfoxide (1/6.1)

tin(IV) triflate - dimethylsulfoxide (1/6.1)

Conditions
ConditionsYield
With oxygen In dimethyl sulfoxide metal. Sn under O2 atm. treated with DMSO and triflic acid (4 equiv.) in3 portions, heated at 100°C for 24 h;99%
bis(trifluoromethanesulfonyl)amide
82113-65-3

bis(trifluoromethanesulfonyl)amide

dimethyl sulfoxide
67-68-5

dimethyl sulfoxide

tin(IV) triflimidate - dimethylsulfoxide (1/7.9)

tin(IV) triflimidate - dimethylsulfoxide (1/7.9)

Conditions
ConditionsYield
With oxygen In dimethyl sulfoxide metal. Sn under O2 atm. treated with DMSO and triflimidic acid (4 equiv.) in 3 portions, heated at 100°C for 7 h;99%
selenium
7782-49-2

selenium

barium
7440-39-3

barium

Ba2SnSe5

Ba2SnSe5

Conditions
ConditionsYield
In neat (no solvent) mixt. of Ba, Sn, Se in stoich. ratio 2:1:5 was placed into fused silica tube; sealed under vac.; put into furnace; heated to 750°C within3 ds; kept at 750°C for 4 ds; cooled to 700°C within 10 m in; annealed at 650°C for 4 ds; cooled to room temp. within 4 ds;99%
Stage #1: selenium; tin; barium at 750℃; for 150h; Sealed tube;
Stage #2: at 650℃; for 100h;
samarium
7440-19-9

samarium

nickel
7440-02-0

nickel

Sm2NiSn4

Sm2NiSn4

Conditions
ConditionsYield
In neat (no solvent, solid phase) mixt. of Sm, Ni, Sn loaded into Ta tube, heated at 970°C for 36 h, quenched in water, annealed at 700°C for 15 d;99%
In neat (no solvent, solid phase) mixt. of Sm, Ni, Sn loaded into Nb tube, heated under dynamic vac. at 300°C for 1 d, heated at 950°C for 5 d, cooled to room temp.at 15°C/h;
o-tetrachloroquinone
2435-53-2

o-tetrachloroquinone

tetraethylammonium bromide
71-91-0

tetraethylammonium bromide

N(C2H5)4(1+)*SnBr(O2C6Cl4)2(1-)={(C2H5)4N}{SnBr(O2C6Cl4)2}

N(C2H5)4(1+)*SnBr(O2C6Cl4)2(1-)={(C2H5)4N}{SnBr(O2C6Cl4)2}

Conditions
ConditionsYield
In toluene; acetonitrile under dry N2, finely divided metal and o-quinone refluxed in toluene (24 h), filtration, addn. of Et4NBr in minimum amount of CH3CN (light-brown solid deposit), stirred (2 h, room temp.), addn. of diethyl ether, pptn.; filtration, evapn.; elem. anal.;99%
o-tetrachloroquinone
2435-53-2

o-tetrachloroquinone

tetraphenyl phosphonium chloride
2001-45-8

tetraphenyl phosphonium chloride

P(C6H5)4(1+)*SnCl(O2C6Cl4)2(1-)={P(C6H5)4}{SnCl(O2C6Cl4)2}

P(C6H5)4(1+)*SnCl(O2C6Cl4)2(1-)={P(C6H5)4}{SnCl(O2C6Cl4)2}

Conditions
ConditionsYield
In toluene; acetonitrile under dry N2, finely divided metal and o-quinone refluxed in toluene (24 h), filtration, addn. of Ph4PCl in minimum amount of CH3CN (light-brown solid deposit), stirred (2 h, room temp.), addn. of diethyl ether, pptn.; filtration, evapn.; elem. anal.;99%
2-methoxy-ethanol
109-86-4

2-methoxy-ethanol

Sn(2+)*2OC2H4OCH3(1-)=Sn(OC2H4OCH3)2

Sn(2+)*2OC2H4OCH3(1-)=Sn(OC2H4OCH3)2

Conditions
ConditionsYield
With lithium chloride In further solvent(s) Electrolysis; (N2 or Ar); using of Sn as anode and stainless steel plate as cathode; electrolysis for 1-1.5 h with soln. of electrolyte LiCl in MeOCH2CH2OH; removal of methyl cellosolve in vac., sepn. from LiCl by extn. with toluene; distn. in vac.; elem. anal.;99%
Electrochem. Process; Dissolution of Sn anode at 110-220 V and 0.2-0.5 A.; Elem. anal.;
selenium
7782-49-2

selenium

caesium selenide

caesium selenide

arsenic trisulfide

arsenic trisulfide

2Cs(1+)*SnAs2Se9(2-)=Cs2SnAs2Se9

2Cs(1+)*SnAs2Se9(2-)=Cs2SnAs2Se9

Conditions
ConditionsYield
In neat (no solvent) mixt. Cs2Se, Sn, As2S3, and Se was heated at 500°C for 4 days andthen cooled to 250°C at rate 5°C/h followeed by rapid coo ling to room temp.; products were washed with DMF and ether;99%
In neat (no solvent) mixt. Cs2Se, Sn, As2S3, and Se was heated at 550°C for 4 days andthen cooled to 250°C at rate 5°C/h followeed by rapid coo ling to room temp.; products were washed with DMF and ether;
Conditions
ConditionsYield
at 399.84 - 699.84℃; for 408h; Sealed tube;98%
In melt sealed in evacuated quartz ampoule; placed in vertical furnace; heated to 1150°C at 40°C/h; kept for 24 h, cooled at 10°C/hto 800°C, at 1°C/h to 640°C, to 500°C at 5. degree.C/h, annealed for 120 h;
In neat (no solvent) vac; 1350 K;
iodine
7553-56-2

iodine

2-Aminophenyl disulfide
1141-88-4

2-Aminophenyl disulfide

Sn(SC6H4NH2-o)3I
369361-53-5

Sn(SC6H4NH2-o)3I

Conditions
ConditionsYield
In toluene 1.5 equiv. of disulfide, 0.5 equiv. of I2 and Sn metal were refluxed in toluene for 4 h; mixt. was filtered through Celite, soln. was concd. in vac., cooled in ice-bath, solid was filtered off, washed with petroleum ether (60-80 °C), dried in vac., elem. anal.;98%

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