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13765-44-1

13765-44-1

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13765-44-1 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 13765-44-1 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,3,7,6 and 5 respectively; the second part has 2 digits, 4 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 13765-44:
(7*1)+(6*3)+(5*7)+(4*6)+(3*5)+(2*4)+(1*4)=111
111 % 10 = 1
So 13765-44-1 is a valid CAS Registry Number.
InChI:InChI=1/H3Si/h1H3

13765-44-1SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name silyl

1.2 Other means of identification

Product number -
Other names trihydridosilicon(.)

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:13765-44-1 SDS

13765-44-1Upstream product

13765-44-1Downstream Products

13765-44-1Related news

Abstraction of hydrogen by SiH3 (cas 13765-44-1) from hydrogen-terminated Si(001)-(2×1) surfaces09/30/2019

We present the dynamics and energetics of an Eley–Rideal reaction by which SiH 3 radicals impinging on a H-terminated Si(001)-(2×1) surface during plasma deposition abstract hydrogen atoms from the surface and return to the gas phase as silane molecules. The reactions were observed dur...detailed

Atomistic calculation of the SiH3 (cas 13765-44-1) surface reactivity during plasma deposition of amorphous silicon thin films09/29/2019

We report a direct, statistically significant calculation of the surface reactivity of the SiH 3 radical on hydrogenated amorphous silicon (a-Si:H) using molecular-dynamics simulations of repeated impingement of SiH 3 radicals on growth surfaces of smooth a-Si:H films over the te...detailed

Interaction of SiH3 (cas 13765-44-1) radicals with deuterated (hydrogenated) amorphous silicon surfaces10/01/2019

Interactions of SiH 3 radicals with surfaces of deuterated amorphous silicon (a-Si:D) and hydrogenated amorphous silicon (a-Si:H) films were studied using attenuated total reflection Fourier transform infrared spectroscopy and molecular-dynamics simulations, respectively. SiH 3 r...detailed

Theoretical study and rate constants calculation for the reactions of SiH3 (cas 13765-44-1) radical with SiH3 (cas 13765-44-1)CH3 and SiH2(CH3)209/26/2019

The multiple‐channel reactions SiH3 + SiH3CH3 → products and SiH3 + SiH2(CH3)2 → products are investigated by direct dynamics method. The minimum energy path (MEP) is calculated at the MP2/6‐31+G(d,p) level, and energetic information is further refined by the MC‐QCISD method. The rate const...detailed

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