Interaction of SiH3 (cas 13765-44-1) radicals with deuterated (hydrogenated) amorphous silicon surfaces

Add time:10/01/2019    Source:infona.pl

Interactions of SiH 3 radicals with surfaces of deuterated amorphous silicon (a-Si:D) and hydrogenated amorphous silicon (a-Si:H) films were studied using attenuated total reflection Fourier transform infrared spectroscopy and molecular-dynamics simulations, respectively. SiH 3 radicals abstract surface silicon deuterides through an Eley–Rideal abstraction reaction. Surface deuteride abstraction occurs on the same time scale as SiH 3 insertion into Si–Si bonds over the substrate temperature range of 60–300°C. Some fraction of SiH 3 adsorbing on the a-Si:D/a-Si:H films dissociates and releases H into the subsurface. These observations are consistent with the temperature independent reaction probability of SiH 3 and the temperature dependent smoothening mechanism of a-Si:H thin films.

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