157259-26-2

Basic information

• Product Name: Phenol, 4-(2-propenyloxy)-, 4-methylbenzenesulfonate
• CAS NO: 157259-26-2
• Molecular Formula: C16H16O4S
• Molecular Weight: 304.367
• Mol File: 157259-26-2.mol
• Article Data: 2

Chemical Properties

• CAS DataBase Reference: Phenol, 4-(2-propenyloxy)-, 4-methylbenzenesulfonate(CAS DataBase Reference)
• NIST Chemistry Reference: Phenol, 4-(2-propenyloxy)-, 4-methylbenzenesulfonate(157259-26-2)
• EPA Substance Registry System: Phenol, 4-(2-propenyloxy)-, 4-methylbenzenesulfonate(157259-26-2)

Safety Data

• Hazardous Substances Data: 157259-26-2(Hazardous Substances Data)

Upstream product

• 6411-34-3 4-allyloxyphenol 
• 98-59-9 p-toluenesulfonyl chloride 
• 2581-43-3 cyclohexane-1,4-diyl bis(4-methylbenzenesulfonate) 
• 107-18-6 allyl alcohol 

Downstream Products

• 35616-03-6 4-hydroxyphenyl 4-methyl-1-benzenesulfonate 
• 6411-34-3 4-allyloxyphenol 
• 448956-60-3 4-[4-(allyloxy)phenoxy]benzaldehyde 
• 756869-43-9 [4-(4-allyloxy-phenoxy)-benzyl]-(2-methyl-3-nitro-phenyl)-amine 
• 448956-61-4 4-(4-{[benzyl-(2-methyl-3-nitro-phenyl)-amino]-methyl}-phenoxy)-phenol 
• 756869-45-1 [4-(4-allyloxy-phenoxy)-benzyl]-benzyl-(2-methyl-3-nitro-phenyl)-amine 

Relevant articles and documents

Novel polymeric nonionic photoacid generators and corresponding polymer Langmuir-Blodgett (LB) films for photopatterning

A series of new polymeric nonionic photoacid generators (PAGs) and PAG-bound polymers designed for photoresist materials in Langmuir-Blodgett (LB) films have been synthesized and characterized. The novel polymer could form a stable and condensed monolayer on water surface, which could be transferred successfully onto solid substrate. Upon deep UV irradiation, the acid generated by the photoacid generator catalyzed the naphthyl moiety to liberate naphthol and regenerate carboxyl in the exposed region. The rent moiety could dissolve in alkaline aqueous, resulting in a fine positive tone resist patterns with a resolution of 0.75 μm. Sensitivity curves and TGA studies revealed that the high sensitivity in 248 nm irradiation was attributed to the present of PAG units incorporated in the polymer chains. The result of translated gold pattern with the same resolution as the resist pattern also demonstrated that the resist LB films had sufficient resistance to wet etching process.