17084-08-1

Basic information

• Product Name: CESIUM HEXAFLUORO SILICATE
• Synonyms: CESIUM HEXAFLUORO SILICATE;fluorosilicate;fluosilicate;hexafluorosilicate;hexafluoro-silicate(2-;hexafluorosilicate(2-);hexafluorosilicate(2-)ion;silicofluoride
• CAS NO: 17084-08-1
• Molecular Formula: F₆Si
• Molecular Weight: 407.89
• Mol File: 17084-08-1.mol

Chemical Properties

• Boiling Point: 100°C at 760 mmHg
• Appearance: /
• Density: 4.75 g/cm3
• Vapor Pressure: 24.5mmHg at 25°C
• CAS DataBase Reference: CESIUM HEXAFLUORO SILICATE(CAS DataBase Reference)
• NIST Chemistry Reference: CESIUM HEXAFLUORO SILICATE(17084-08-1)
• EPA Substance Registry System: CESIUM HEXAFLUORO SILICATE(17084-08-1)

Safety Data

• Hazardous Substances Data: 17084-08-1(Hazardous Substances Data)

Usage

Uses

Used in Chemical Production:
Cesium Hexafluorosilicate is used as a chemical intermediate for the synthesis of various other chemicals. Its application in this industry is due to its unique chemical properties, which make it a valuable component in the creation of a wide range of chemical products.
Used in Research and Development:
In the field of scientific research, Cesium Hexafluorosilicate is utilized as a compound for studying its chemical properties and potential applications. Its more soluble nature than the corresponding fluoride salt makes it an interesting subject for researchers to explore and understand its behavior in different chemical reactions and processes.

Air & Water Reactions

Slightly soluble in water. Forms heavy clouds with moist air, decomposed by water into silicic acid and hydrofluoric acid [Merck 11th ed. 1989].

Reactivity Profile

Salts, basic, such as SILICOFLUORIDES, are generally soluble in water. The resulting solutions contain moderate concentrations of hydroxide ions and have pH's greater than 7.0. They react as bases to neutralize acids. These neutralizations generate heat, but less or far less than is generated by neutralization of the bases in reactivity group 10 (Bases) and the neutralization of amines. They usually do not react as either oxidizing agents or reducing agents but such behavior is not impossible.

Hazard

Very toxic.

Health Hazard

Highly toxic, may be fatal if inhaled, swallowed or absorbed through skin. Avoid any skin contact. Effects of contact or inhalation may be delayed. Fire may produce irritating, corrosive and/or toxic gases. Runoff from fire control or dilution water may be corrosive and/or toxic and cause pollution.

Fire Hazard

Non-combustible, substance itself does not burn but may decompose upon heating to produce corrosive and/or toxic fumes. Containers may explode when heated. Runoff may pollute waterways.

InChI:InChI=1/6FH.Mg.6H2O.Si/h6*1H;;6*1H2;/q;;;;;;+2;;;;;;;+4/p-6

Upstream product

• 7664-39-3 hydrogen fluoride 
• 7697-37-2 nitric acid 
• 10193-36-9 silicic Acid 
• 7789-24-4 lithium fluoride 

Downstream Products

• 69890-53-5 SiF₅(H₂O)^(1-) 
• 7664-39-3 hydrogen fluoride 
• 16984-48-8 fluoride 

Relevant articles and documents

Reactive species generated during wet chemical etching of silicon in HF/HNO3 mixtures

The role of intermediate species generated during wet chemical etching of silicon in a HF-rich HF/HNO3 mixture was studied by spectroscopic and analytical methods at 1°C. The intermediate N2O3 was identified by its cobalt blue color and the characteristic features in its UV-vis and Raman spectra. Furthermore, a complex N(III) species (3NO +·NO3-) denoted as [N4O 62+] is observed in these solutions. The time-dependent decay of the N(III) intermediates, mainly by their oxidation at the liquid-air interface, serves as a precondition for the study of the etch rate as function of the intermediate concentration measured by Raman spectroscopy. From a linear relationship between etch rate and [N4O62+] concentration, NO+ is considered to be a reactive species in the rate-limiting step. This step is attributed to the oxidation of permanent existing Si-H bonds at the silicon surface by the reactive NO+ species. N2O3 serves as a reservoir for the generation of NO+ leading to a complete coverage of the silicon surface with reactive species at high intermediate concentrations. As long as this condition is valid (plateau region), the etch rate is constant and yields a smooth silicon surface upon completion of the etching. If the N2O3 concentration is insufficient to ensure a coverage of the Si surface by NO +, the etch rate decreases linearly with the N2O 3 concentration and results in a roughening of the etched silicon surface (slope region).