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17084-08-1

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17084-08-1 Usage

Chemical Properties

More soluble than the corresponding fluoride salt.

Definition

Any salt of fluorosilic acid.

General Description

A crystalline solid or the solid dissolved in a liquid. Denser than water. Contact may irritate skin, eyes and mucous membranes. May be toxic by ingestion. Used to make other chemicals.

Air & Water Reactions

Slightly soluble in water. Forms heavy clouds with moist air, decomposed by water into silicic acid and hydrofluoric acid [Merck 11th ed. 1989].

Reactivity Profile

Salts, basic, such as SILICOFLUORIDES, are generally soluble in water. The resulting solutions contain moderate concentrations of hydroxide ions and have pH's greater than 7.0. They react as bases to neutralize acids. These neutralizations generate heat, but less or far less than is generated by neutralization of the bases in reactivity group 10 (Bases) and the neutralization of amines. They usually do not react as either oxidizing agents or reducing agents but such behavior is not impossible.

Hazard

Very toxic.

Health Hazard

Highly toxic, may be fatal if inhaled, swallowed or absorbed through skin. Avoid any skin contact. Effects of contact or inhalation may be delayed. Fire may produce irritating, corrosive and/or toxic gases. Runoff from fire control or dilution water may be corrosive and/or toxic and cause pollution.

Fire Hazard

Non-combustible, substance itself does not burn but may decompose upon heating to produce corrosive and/or toxic fumes. Containers may explode when heated. Runoff may pollute waterways.

Check Digit Verification of cas no

The CAS Registry Mumber 17084-08-1 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,7,0,8 and 4 respectively; the second part has 2 digits, 0 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 17084-08:
(7*1)+(6*7)+(5*0)+(4*8)+(3*4)+(2*0)+(1*8)=101
101 % 10 = 1
So 17084-08-1 is a valid CAS Registry Number.
InChI:InChI=1/6FH.Mg.6H2O.Si/h6*1H;;6*1H2;/q;;;;;;+2;;;;;;;+4/p-6

17084-08-1SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 19, 2017

Revision Date: Aug 19, 2017

1.Identification

1.1 GHS Product identifier

Product name hexafluorosilicate(2-)

1.2 Other means of identification

Product number -
Other names Cesium hexafluoro silicate

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:17084-08-1 SDS

17084-08-1Relevant articles and documents

Reactive species generated during wet chemical etching of silicon in HF/HNO3 mixtures

Steinert, Marco,Acker, Joerg,Krause, Matthias,Oswald, Steifen,Wetzig, Klaus

, p. 11377 - 11382 (2008/10/09)

The role of intermediate species generated during wet chemical etching of silicon in a HF-rich HF/HNO3 mixture was studied by spectroscopic and analytical methods at 1°C. The intermediate N2O3 was identified by its cobalt blue color and the characteristic features in its UV-vis and Raman spectra. Furthermore, a complex N(III) species (3NO +·NO3-) denoted as [N4O 62+] is observed in these solutions. The time-dependent decay of the N(III) intermediates, mainly by their oxidation at the liquid-air interface, serves as a precondition for the study of the etch rate as function of the intermediate concentration measured by Raman spectroscopy. From a linear relationship between etch rate and [N4O62+] concentration, NO+ is considered to be a reactive species in the rate-limiting step. This step is attributed to the oxidation of permanent existing Si-H bonds at the silicon surface by the reactive NO+ species. N2O3 serves as a reservoir for the generation of NO+ leading to a complete coverage of the silicon surface with reactive species at high intermediate concentrations. As long as this condition is valid (plateau region), the etch rate is constant and yields a smooth silicon surface upon completion of the etching. If the N2O3 concentration is insufficient to ensure a coverage of the Si surface by NO +, the etch rate decreases linearly with the N2O 3 concentration and results in a roughening of the etched silicon surface (slope region).

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