193-44-2

Usage

Uses

Used in Organic Electronics and Optoelectronic Devices:
5,6,11,12-Tetrathiotetracene is used as a key component in the development of organic light-emitting diodes (OLEDs), field-effect transistors (FETs), and organic photovoltaic (OPV) devices due to its interesting electrical and photophysical properties. Its strong fluorescence and unique chemical reactivity, imparted by the sulfur atoms, contribute to the performance and efficiency of these devices.
Used in Organic Light-Emitting Diodes (OLEDs):
5,6,11,12-Tetrathiotetracene is used as an emissive layer material in OLEDs for its strong fluorescence properties, which contribute to the high brightness and color purity of the emitted light. Its chemical stability also ensures the longevity and reliability of the OLED devices.
Used in Field-Effect Transistors (FETs):
In FETs, 5,6,11,12-Tetrathiotetracene is used as a semiconductor material, leveraging its electrical properties to control the flow of charge carriers and improve the device's performance. Its high thermal and chemical stability make it suitable for use in various electronic applications.
Used in Organic Photovoltaic Devices (OPVs):
5,6,11,12-Tetrathiotetracene is employed as an active layer material in OPVs, where its photophysical properties enable efficient light absorption and charge generation. The incorporation of 5,6,11,12-Tetrathiotetracene in OPVs can enhance the power conversion efficiency and overall performance of the solar cells.
Used in the Synthesis of Novel Organic Materials:
The unique chemical reactivity of 5,6,11,12-Tetrathiotetracene, due to the presence of sulfur atoms, makes it a valuable building block for the synthesis of new organic materials with tailored properties. These materials can find applications in various fields, including pharmaceuticals, materials science, and nanotechnology.

Upstream product

• 92-24-0 Tetracen 
• 71038-78-3 5,11-dichlorotetracene 
• 87-61-6 1,2,3-trichlorobenzene 
• 7732-18-5 water 
• 36529-19-8 naphthaceno[5,6-cd;11,12-c'd']bis-[1,2]dithioliumyl; acetate 
• 64-19-7 acetic acid 
• 40577-78-4 5,11-dibromonaphthacene 

Downstream Products

• 42439-34-9 tetrathiafulvalene-tetracyanoquinodimethane 
• 42439-34-9 C₁₈H₈S₄*2C₁₂H₄N₄ 
• 1090-13-7 5,12-naphthacenequinone 
• 100858-13-7 FeOCl(tetrathiatetracene)1/9(toluene)1/24 intercalate 

Relevant academic research and scientific papers

Synthesis and thermoelectric properties of 2- and 2,8-substituted tetrathiotetracenes

Reaction of elemental sulfur with 2-R1 and 2,8-R1,R2-substituted tetracenes (2) in refluxing DMF affords 5,6,11,12 tetrathiotetracenes (1) in good yields (74-99%) for a range of substituents where R1,R2 are: H,H (a); Me,H (b); MeO,H (c); Ph,H (d); Me,Me (e), iPr,Me (f, iPr = iso-propyl, CHMe2), Me,MeO (g); MeO,MeO (h). The reaction rate is limited only by the solubility of the tetracene (2); 2g-h being both the least soluble and slowest reacting. At partial conversion recovered single crystalline 2g led to its X-ray structure determination. Vacuum deposited (substrate deposition temperature 300 K, pressure 7 × 10-6 mbar, source temperature 500 K) thin films from 1 (of initial 88-99% purity) show final electrical conductivities, σ(in plane) from 1.40 × 10-5 S cm-1 (1g) to 3.74 × 10-4 S cm-1 (1b) for the resultant near pristine films; while 1d proved too involatile to be effectively sublimed under these conditions. In comparison, initially 95% pure TTT (1a) based films show σ(in-plane) = 4.33 × 10-5 S cm-1. The purities of 1a-h are highly upgraded during sublimation. Well defined micro-crystallites showing blade, needle or mossy like habits are observed in the films. The Seebeck coefficients (Sb) of the prepared 1 range from 374 (1c) to 900 (1f) μV K-1 (vs. 855 μV K-1 for identically prepared 95% pure TTT, 1a). Doping of films of 1f (R1 = iPr, R2 = Me) with iodine produces optimal p-type behaviour: σ(in-plane) = 7.00 × 10-2 S cm-1, Sb = 175 μV K-1. The latter's power factor (PF) at 0.33 μW m-1 K-2 is more than 500 times that of the equivalent I2-doped TTT films (1a, R1 = R2 = H), previously regarded as the optimal material for thin film thermoelectric devices using acene radical cation motifs.