19756-04-8

Basic information

• Product Name: TETRAKIS(DIMETHYLAMINO)ZIRCONIUM
• Synonyms: ZIRCONIUM TETRAKIS(DIMETHYLAMIDE);ZIRCONIUM DIMETHYLAMIDE;TETRAKIS(DIMETHYLAMIDO)ZIRCONIUM(IV);TETRAKIS(DIMETHYLAMINO)ZIRCONIUM;TETRAKIS(DIMETHYLAMINO)ZIRCONIUM(IV);TETRAKIS(DIMETHYLAMIDO)ZIRCONIUM(IV), 99.99+%, ELECTRONIC GRADE;TETRAKIS(DIMETHYLAMINO)ZIRCONIUM(IV) C&;Tetrakis(dimethylamino)zirkonium
• CAS NO: 19756-04-8
• Molecular Formula: 4C₂H₆N*Zr
• Molecular Weight: 267.53
• EINECS: 243-271-2
• Product Categories: metal amide complex;ALD Precursors
• Mol File: 19756-04-8.mol
• Article Data: 15

Chemical Properties

• Melting Point: 57-60 °C(lit.)
• Boiling Point: 80°C 0,1mm
• Flash Point: >65℃
• Appearance: /solid
• Storage Temp.: water-free area
• Sensitive: moisture sensitive, store cold
• CAS DataBase Reference: TETRAKIS(DIMETHYLAMINO)ZIRCONIUM(CAS DataBase Reference)
• NIST Chemistry Reference: TETRAKIS(DIMETHYLAMINO)ZIRCONIUM(19756-04-8)
• EPA Substance Registry System: TETRAKIS(DIMETHYLAMINO)ZIRCONIUM(19756-04-8)

Safety Data

• Hazard Codes: F,Xi
• Statements: 11-14/15-36/37/38
• Safety Statements: 16-26-36-43
• RIDADR: UN 3396 4.3/PG 2
• WGK Germany: 3
• TSCA: No
• Hazardous Substances Data: 19756-04-8(Hazardous Substances Data)

Usage

Description

TETRAKIS(DIMETHYLAMINO)ZIRCONIUM is a pale yellow-greenish crystalline solid that is utilized as a precursor in various applications due to its unique chemical properties.

Uses

Used in Deposition Systems:
TETRAKIS(DIMETHYLAMINO)ZIRCONIUM is used as a precursor for atomic layer deposition of zirconium. This process is essential for creating thin films of zirconium with precise control over the thickness and uniformity, which is crucial in various applications.
Used in Gas Sensor Industry:
TETRAKIS(DIMETHYLAMINO)ZIRCONIUM is used as a precursor for the development of gas sensors. The deposited zirconium layers can be integrated into the sensor design to enhance their sensitivity and selectivity towards specific gases.
Used in Microelectronics Industry:
In the microelectronics industry, TETRAKIS(DIMETHYLAMINO)ZIRCONIUM is used as a precursor for the fabrication of high-k dielectrics. These dielectric materials are vital for improving the performance of transistors and other microelectronic components by providing better insulation and reducing power consumption.

InChI:InChI=1/4C2H6N.Zr/c4*1-3-2;/h4*1-2H3;/q4*-1;+4/rC8H24N4Zr/c1-9(2)13(10(3)4,11(5)6)12(7)8/h1-8H3

Upstream product

• 1030839-76-9 [Zr(κ3-N,N,N-tris(4,4-dimethyl-2-oxazolinyl)phenylborate)Cl3] 
• 3585-33-9 lithium dimethylamide 
• 10026-11-6 zirconium(IV) chloride 
• 124-40-3 dimethyl amine 
• 7732-18-5 water 
• 216780-49-3 Zr(NMe₂)3(Si(SiMe₃)3) 

Downstream Products

• 7440-67-7 zirconium(IV) oxide 
• 1449697-17-9 C₂₅H₂₃F₁₀N₅Zr 
• 224637-89-2 [(Me₂N)3Zr(SiBu(t)Ph₂)2]^(1-) 
• 688739-39-1 [Zr(NMe₂)5]^(1-) 
• 1030839-77-0 [Zr(κ3-tris(4,4-dimethyl-2-oxazolinyl)phenylborate)(NMe2)3] 
• 1116119-98-2 Zr(dimethylamido)2(N-((pyridin-2-yl)methyl)-2,3,4,5,6-pentafluoroanilide)2 
• 1116120-00-3 ZrF(dimethylamido)(2,3,4,5,6-pentafluoro-N-((pyridin-2-yl)methyl)anilide)(N(C₆F₄NMe₂)(CH₂C₅H₄N)) 
• 1116119-90-4 ZrF(dimethylamido)(2,3,4,5,6-pentafluoro-N-((6-methylpyridin-2-yl)methyl)anilide)(N(C₆F₄NMe₂)(CH₂C₅H₃NCH₃)) 
• 1116119-93-7 Zr(dimethylamido)2(N-((6-bromopyridin-2-yl)methyl)-2,3,4,5,6-pentafluoroanilide)2 
• 1122708-59-1 ((S)-2-(mesitoylamino)-2'-(dimethylamino)-1,1'-binaphthyl(-1H))2Zr(NMe₂)2*(toluene) 
• 1122708-50-2 ((R)-2-(pyridin-2-ylmethylamino)-2'-(dimethylamino)-6,6'-dimethyl-1,1'-biphenyl(-1H))Zr(NMe₂)3 
• 1122708-56-8 ((R)-2-(mesitoylamino)-2'-(dimethylamino)-6,6'-dimethyl-1,1'-biphenyl(-1H))2Zr(NMe₂)2 
• 1122708-52-4 ((R)-2-(diphenylphosphinoylamino)-2'-(dimethylamino)-6,6'-dimethyl-1,1'-biphenyl(-1H))2Zr(NMe₂)2 
• 1204291-85-9 Zr(NMe₂)2(Me₂NC(NCy)2)2 

Relevant articles and documents

Amide-silyl ligand exchanges and equilibria among group 4 amide and silyl complexes

M(NMe2)4 (M = Zr, 1a; Hf, 1b) and the silyl anion (SiButPh2)- (2) in Li(THF)2SiBu tPh2 (2-Li) were found to undergo a ligand exchange to give [M(NMe2)3(SiButPh2) 2]- (M = Zr, 3a; Hf, 3b) and [M(NMe2) 5]- (M = Zr, 4a; Hf, 4b) in THF. The reaction is reversible, leading to equilibria: 2 1a (or 1b) + 2 2 ? 3a (or 3b) + 4a (or 4b). In toluene, the reaction of 1a with 2 yields [(Me2N) 3Zr(SiButPh2)2] -[Zr(NMe2)5Li2(THF) 4]+ (5) as an ionic pair. The silyl anion 2 selectively attacks the -N(SiMe3)2 ligand in (Me2N) 3Zr-N(SiMe3)2 (6a) to give 3a and [N(SiMe 3)2]- (7) in reversible reaction: 6a + 2 2 ? 3a + 7. The following equilibria have also been observed and studied: 2M(NMe2)4 (1a; 1b) + [Si(SiMe3) 3]- (8) ? (Me2N)3M-Si(SiMe 3)3 (M = Zr, 9a; Hf, 9b) + [M(NMe2) 5]- (M = Zr, 4a; Hf, 4b); 6a (or 6b) + 8 ? 9a (or 9b) + [N(SiMe3)2]- (7). The current study represents rare, direct observations of reversible amide-silyl exchanges and their equilibria. Crystal structures of 5, (Me2N)3Hf- Si(SiMe3)3 (9b), and [Hf(NMe2) 4]2 (dimer of 1b), as well as the preparation of (Me 2N)3M-N(SiMe3)2 (6a; 6b) are also reported.

Fabrication and characterization of ALD-grown ZrO2:Ge thin films on Si(100) using CpZr(NMe2)3 and (NMe2)2Ge(ipr2en) precursors with ozone

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Efficient synthesis of rac-(ethylenebis(indenyl))ZrX2 complexes via amine elimination

The amine elimination reaction of 1,2-bis(3-indenyl)ethane (3) and Zr(NMe2)4 (2) affords pure rac-(EBI)Zr(NMe2)2 (4; EBI = 1,2-ethylenebis(1-indenyl)) in 68% isolated yield. Treatment of 4 with 2 equiv of Me2-NH·HCl affords rac-(EBI)ZrCl2 (1) in 92% isolated yield. Compound 1 can also be prepared directly from 2 and 3 in a one-pot synthesis in 69% isolated yield.

Structurally characterized carboxylic acid modified zirconium alkoxides for the production of zirconium oxide thin films

A series of carboxylic acid (H-ORc) modified zirconium alkoxides (Zr(OR)4) were synthesized through the reaction of the commercially available [Zr(μ-OPri)(OPri)3(H-OPr i)]2 (1, OPri = OCH(CH3) 2) with a series of sterically varied H-ORc, including: formic acid (H-O2CH or H-OFc), acetic acid (H-O2CCH3 or H-OAc), isobutyric acid (H-O2CCH(CH3)2 or H-OPc), trimethyl acetic acid (H-O2C(CH3)3 or H-OBc), and t-butyl acetic acid (H-O2CCH2C(CH 3)3 or H-ONc) which yielded the following products: Zr4(μ4-O)(μ-O)(μ-OFc)2(μ-OPr i)4(OPri)6 (2), Zr 3(μ3-O)(μ-OAc)3(OAc)2(μ- OPri)2(OPri)3 (3), [Zr 2(μ-OPc)2(μ-OPri)2(OPr i)4]2 (4), Zr2(μ-OBc)(μ- OPri)2(OPri)5(H-OPri) ? (H-OPri) (5), Zr2(μ-ONc)(ONc)(μ-OPr i)2(OPri)4(H-OPri) (6).To increase the structural variability of these precursors, we also investigated the H-ORc modifications of the novel Zr3(μ3-O) (μ3-ONep)(μ-ONep)3(ONep)6 (7) which was isolated from the reaction between Zr(NMe2)4 and 4 H-OCH2C(CH3)3 (H-ONep).The ORc-modified 7 species were isolated as: Zr3(μ3-O)(μ-OAc) 3(μ-ONep)2(ONep)5 (8), Zr 5(μ-O)3(μ-OPc)6(μ-ONep) 2(ONep)6 (9), [Zr(μ-OPc)(μ-ONep)(ONep) 2]2 (10), Zr5(μ-O)3(μ-ONc) 6(μ-ONep)2(ONep)6 ? (H-ONep) ? 1/2(C7H8) (11). Once fully characterized, these compounds were used to generate thin films of ZrO2 to investigate the optimal structural aspects that dictate thin film density. It was determined that the majority of these compounds did not yield high quality films; however, the non-condensed species (3-5) did produce clear and continuous ZrO2 films. From this very limited set of useful precursors, the larger nuclearity species (3) led to films of higher densification.

Novel precursor compounds for forming zirconium-containing film, compositions for forming zirconium-containing film comprising the same, and method of forming zirconium-containing film using them as precursors

Disclosed are a cyclopentadienyl zirconium (IV) compound which is substituted with a cycloalkyl group represented in the chemical formula 1, a precursor composition for forming a zirconium-containing film including the same, and a method for forming a zirconium-containing film by using the same. In the composition, the compound in the chemical formula 1 does not react with mixed components thereof and exists stably from each other and in a uniformly mixed state in a liquid state and therefore, the composition behaves as a single compound and shows a high vapor pressure. By using the composition of the present invention, it is possible to easily and economically obtain a zirconium-containing film having the same quality as a high quality zirconia.(AA) Chemical shiftCOPYRIGHT KIPO 2016

ORGANOMETALLIC COMPOUND PREPARATION

A method of continuously manufacturing an organometallic compound is provided where two or more reactants are conveyed to a contacting zone of a reactor in a manner so as to maintain a laminar flow of the reactants; and causing the reactants to form the organometallic compound.