19756-04-8

Basic information

• Product Name: TETRAKIS(DIMETHYLAMINO)ZIRCONIUM
• Synonyms: ZIRCONIUM TETRAKIS(DIMETHYLAMIDE);ZIRCONIUM DIMETHYLAMIDE;TETRAKIS(DIMETHYLAMIDO)ZIRCONIUM(IV);TETRAKIS(DIMETHYLAMINO)ZIRCONIUM;TETRAKIS(DIMETHYLAMINO)ZIRCONIUM(IV);TETRAKIS(DIMETHYLAMIDO)ZIRCONIUM(IV), 99.99+%, ELECTRONIC GRADE;TETRAKIS(DIMETHYLAMINO)ZIRCONIUM(IV) C&;Tetrakis(dimethylamino)zirkonium
• CAS NO: 19756-04-8
• Molecular Formula: 4C₂H₆N*Zr
• Molecular Weight: 267.53
• EINECS: 243-271-2
• Product Categories: metal amide complex;ALD Precursors
• Mol File: 19756-04-8.mol
• Article Data: 15

Chemical Properties

• Melting Point: 57-60 °C(lit.)
• Boiling Point: 80°C 0,1mm
• Flash Point: >65℃
• Appearance: /solid
• Storage Temp.: water-free area
• Sensitive: moisture sensitive, store cold
• CAS DataBase Reference: TETRAKIS(DIMETHYLAMINO)ZIRCONIUM(CAS DataBase Reference)
• NIST Chemistry Reference: TETRAKIS(DIMETHYLAMINO)ZIRCONIUM(19756-04-8)
• EPA Substance Registry System: TETRAKIS(DIMETHYLAMINO)ZIRCONIUM(19756-04-8)

Safety Data

• Hazard Codes: F,Xi
• Statements: 11-14/15-36/37/38
• Safety Statements: 16-26-36-43
• RIDADR: UN 3396 4.3/PG 2
• WGK Germany: 3
• TSCA: No
• Hazardous Substances Data: 19756-04-8(Hazardous Substances Data)

Usage

Description

TETRAKIS(DIMETHYLAMINO)ZIRCONIUM is a pale yellow-greenish crystalline solid that is utilized as a precursor in various applications due to its unique chemical properties.

Uses

Used in Deposition Systems:
TETRAKIS(DIMETHYLAMINO)ZIRCONIUM is used as a precursor for atomic layer deposition of zirconium. This process is essential for creating thin films of zirconium with precise control over the thickness and uniformity, which is crucial in various applications.
Used in Gas Sensor Industry:
TETRAKIS(DIMETHYLAMINO)ZIRCONIUM is used as a precursor for the development of gas sensors. The deposited zirconium layers can be integrated into the sensor design to enhance their sensitivity and selectivity towards specific gases.
Used in Microelectronics Industry:
In the microelectronics industry, TETRAKIS(DIMETHYLAMINO)ZIRCONIUM is used as a precursor for the fabrication of high-k dielectrics. These dielectric materials are vital for improving the performance of transistors and other microelectronic components by providing better insulation and reducing power consumption.

InChI:InChI=1/4C2H6N.Zr/c4*1-3-2;/h4*1-2H3;/q4*-1;+4/rC8H24N4Zr/c1-9(2)13(10(3)4,11(5)6)12(7)8/h1-8H3

Upstream product

• 10026-11-6 zirconium(IV) chloride 
• 124-40-3 dimethyl amine 
• 1030839-76-9 [Zr(κ3-N,N,N-tris(4,4-dimethyl-2-oxazolinyl)phenylborate)Cl3] 
• 3585-33-9 lithium dimethylamide 
• 7732-18-5 water 
• 216780-49-3 Zr(NMe₂)3(Si(SiMe₃)3) 

Downstream Products

• 22450-81-3 tetramethylbis[μ-(N-mrthylmethanaminato)]dialuminum 
• 254729-56-1 ((C₆H₅C₁₀H₇)2Si(CH₃)2)Zr(N(CH₃)2)2 
• 215383-32-7 (((CH₃)2C₆H₃NC₂H₄)2S)Zr(N(CH₃)2)2 
• 215383-37-2 (((CH(CH₃)2)2C₆H₃NC₂H₄)2S)Zr(N(CH₃)2)2 
• 215383-19-0 (((C₂H₅)2C₆H₃NC₂H₄)2O)Zr(N(CH₃)2)2 
• 1030839-77-0 [Zr(κ3-tris(4,4-dimethyl-2-oxazolinyl)phenylborate)(NMe2)3] 
• 1273552-60-5 bis(N-((pyridin-2-yl)methyl)anilido)bis(dimethylamido)zirconium(IV) 
• 1273552-62-7 bis(N-((6-methylpyridin-2-yl)methyl)anilido)bis(dimethylamido)zirconium(IV) 
• 1273552-64-9 bis(N-((6-bromopyridin-2-yl)methyl)anilido)bis(dimethylamido)zirconium(IV) 
• 201803-91-0 (2-phenyl-4,5,6,7-tetrahydroindenyl)(2-cyclohexylindenyl)zirconium dibromide 
• 173163-38-7 (2,6-(isopropyl)2C₆H₃-N-(CH₂)3-N-2,6-(isopropyl)2C₆H₃)Zr(NMe₂)2 
• 184640-76-4 Zr(N(CH₃)2)2(C₅H₃N(CH₂NC₆H₃(CH(CH₃)2)2)2) 
• 293764-36-0 [(N(CH₃)2)2Zr(C₅H₄NC(CH₃)(CH₂N(mesityl))2)] 

Relevant articles and documents

Amide-silyl ligand exchanges and equilibria among group 4 amide and silyl complexes

M(NMe2)4 (M = Zr, 1a; Hf, 1b) and the silyl anion (SiButPh2)- (2) in Li(THF)2SiBu tPh2 (2-Li) were found to undergo a ligand exchange to give [M(NMe2)3(SiButPh2) 2]- (M = Zr, 3a; Hf, 3b) and [M(NMe2) 5]- (M = Zr, 4a; Hf, 4b) in THF. The reaction is reversible, leading to equilibria: 2 1a (or 1b) + 2 2 ? 3a (or 3b) + 4a (or 4b). In toluene, the reaction of 1a with 2 yields [(Me2N) 3Zr(SiButPh2)2] -[Zr(NMe2)5Li2(THF) 4]+ (5) as an ionic pair. The silyl anion 2 selectively attacks the -N(SiMe3)2 ligand in (Me2N) 3Zr-N(SiMe3)2 (6a) to give 3a and [N(SiMe 3)2]- (7) in reversible reaction: 6a + 2 2 ? 3a + 7. The following equilibria have also been observed and studied: 2M(NMe2)4 (1a; 1b) + [Si(SiMe3) 3]- (8) ? (Me2N)3M-Si(SiMe 3)3 (M = Zr, 9a; Hf, 9b) + [M(NMe2) 5]- (M = Zr, 4a; Hf, 4b); 6a (or 6b) + 8 ? 9a (or 9b) + [N(SiMe3)2]- (7). The current study represents rare, direct observations of reversible amide-silyl exchanges and their equilibria. Crystal structures of 5, (Me2N)3Hf- Si(SiMe3)3 (9b), and [Hf(NMe2) 4]2 (dimer of 1b), as well as the preparation of (Me 2N)3M-N(SiMe3)2 (6a; 6b) are also reported.

Fabrication and characterization of ALD-grown ZrO2:Ge thin films on Si(100) using CpZr(NMe2)3 and (NMe2)2Ge(ipr2en) precursors with ozone

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Efficient synthesis of rac-(ethylenebis(indenyl))ZrX2 complexes via amine elimination

The amine elimination reaction of 1,2-bis(3-indenyl)ethane (3) and Zr(NMe2)4 (2) affords pure rac-(EBI)Zr(NMe2)2 (4; EBI = 1,2-ethylenebis(1-indenyl)) in 68% isolated yield. Treatment of 4 with 2 equiv of Me2-NH·HCl affords rac-(EBI)ZrCl2 (1) in 92% isolated yield. Compound 1 can also be prepared directly from 2 and 3 in a one-pot synthesis in 69% isolated yield.

Structurally characterized carboxylic acid modified zirconium alkoxides for the production of zirconium oxide thin films

A series of carboxylic acid (H-ORc) modified zirconium alkoxides (Zr(OR)4) were synthesized through the reaction of the commercially available [Zr(μ-OPri)(OPri)3(H-OPr i)]2 (1, OPri = OCH(CH3) 2) with a series of sterically varied H-ORc, including: formic acid (H-O2CH or H-OFc), acetic acid (H-O2CCH3 or H-OAc), isobutyric acid (H-O2CCH(CH3)2 or H-OPc), trimethyl acetic acid (H-O2C(CH3)3 or H-OBc), and t-butyl acetic acid (H-O2CCH2C(CH 3)3 or H-ONc) which yielded the following products: Zr4(μ4-O)(μ-O)(μ-OFc)2(μ-OPr i)4(OPri)6 (2), Zr 3(μ3-O)(μ-OAc)3(OAc)2(μ- OPri)2(OPri)3 (3), [Zr 2(μ-OPc)2(μ-OPri)2(OPr i)4]2 (4), Zr2(μ-OBc)(μ- OPri)2(OPri)5(H-OPri) ? (H-OPri) (5), Zr2(μ-ONc)(ONc)(μ-OPr i)2(OPri)4(H-OPri) (6).To increase the structural variability of these precursors, we also investigated the H-ORc modifications of the novel Zr3(μ3-O) (μ3-ONep)(μ-ONep)3(ONep)6 (7) which was isolated from the reaction between Zr(NMe2)4 and 4 H-OCH2C(CH3)3 (H-ONep).The ORc-modified 7 species were isolated as: Zr3(μ3-O)(μ-OAc) 3(μ-ONep)2(ONep)5 (8), Zr 5(μ-O)3(μ-OPc)6(μ-ONep) 2(ONep)6 (9), [Zr(μ-OPc)(μ-ONep)(ONep) 2]2 (10), Zr5(μ-O)3(μ-ONc) 6(μ-ONep)2(ONep)6 ? (H-ONep) ? 1/2(C7H8) (11). Once fully characterized, these compounds were used to generate thin films of ZrO2 to investigate the optimal structural aspects that dictate thin film density. It was determined that the majority of these compounds did not yield high quality films; however, the non-condensed species (3-5) did produce clear and continuous ZrO2 films. From this very limited set of useful precursors, the larger nuclearity species (3) led to films of higher densification.

Mesoporous Silica-Supported Amidozirconium-Catalyzed Carbonyl Hydroboration

The hydroboration of aldehydes and ketones using a silica-supported zirconium catalyst is reported. Reaction of Zr(NMe2)4 and mesoporous silica nanoparticles (MSN) provides the catalytic material Zr(NMe2)n@MSN. Exhaustive characterization of Zr(NMe2)n@MSN with solid-state (SS)NMR and infrared spectroscopy, as well as through reactivity studies, suggests its surface structure is primarily ≡ SiOZr(NMe2)3. The presence of these nitrogen-containing zirconium sites is supported by 15N NMR spectroscopy, including natural abundance 15N NMR measurements using dynamic nuclear polarization (DNP) SSNMR. The Zr(NMe2)n@MSN material reacts with pinacolborane (HBpin) to provide Me2NBpin and the material ZrH/Bpin@MSN that is composed of interacting surface-bonded zirconium hydride and surface-bonded borane ≡ SiOBpin moieties in an approximately 1:1 ratio, as well as zirconium sites coordinated by dimethylamine. The ZrH/Bpin@MSN is characterized by 1H/2H and 11B SSNMR and infrared spectroscopy and through its reactivity with D2. The zirconium hydride material or the zirconium amide precursor Zr(NMe2)n@MSN catalyzes the selective hydroboration of aldehydes and ketones with HBpin in the presence of functional groups that are often reduced under hydroboration conditions or are sensitive to metal hydrides, including olefins, alkynes, nitro groups, halides, and ethers. Remarkably, this catalytic material may be recycled without loss of activity at least eight times, and air-exposed materials are catalytically active. Thus, these supported zirconium centers are robust catalytic sites for carbonyl reduction and that surface-supported, catalytically reactive zirconium hydride may be generated from zirconium-amide or zirconium alkoxide sites.

ORGANOMETALLIC COMPOUND PREPARATION

A method of continuously manufacturing an organometallic compound is provided where two or more reactants are conveyed to a contacting zone of a reactor in a manner so as to maintain a laminar flow of the reactants; and causing the reactants to form the organometallic compound.