2172-02-3 Usage
Uses
Used in Semiconductor Industry:
Hafnium tert-butoxide is used as a precursor for the deposition of HfO2 and other hafnium-doped thin films for their application in semiconductor devices. The reason for its use is the high dielectric constant of the deposited films, which is crucial for the performance and efficiency of these devices.
Used in Thin Film Deposition:
Hafnium tert-butoxide is used as a volatile precursor in vapor deposition techniques for the creation of thin films. The application reason is its mononuclear structure, which allows for precise control over the deposition process and the formation of high-quality films with desired properties.
Used in Dielectric Materials:
Hafnium tert-butoxide is used as a component in the development of dielectric materials for electronic devices. The high dielectric constant of the resulting HfO2 films makes them ideal for use as insulating layers in capacitors and other electronic components, enhancing their performance and reliability.
Check Digit Verification of cas no
The CAS Registry Mumber 2172-02-3 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 2,1,7 and 2 respectively; the second part has 2 digits, 0 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 2172-02:
(6*2)+(5*1)+(4*7)+(3*2)+(2*0)+(1*2)=53
53 % 10 = 3
So 2172-02-3 is a valid CAS Registry Number.
InChI:InChI=1/4C4H9O.Hf/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4
2172-02-3Relevant academic research and scientific papers
Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same
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Page/Page column 16, (2010/02/11)
A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.
