30914-08-0Relevant articles and documents
Catalytic Reduction of Carbon Dioxide Using Cationic Organoaluminum and -Gallium Compounds
Saleh, Mahmoud,Powell, Douglas R.,Wehmschulte, Rudolf J.
, p. 4810 - 4815 (2018/02/07)
Ethide abstraction from Et3M (M = Al and Ga), (2,6-Ph2C6H3)AlEt2, 1, and (2,6-Dipp2C6H3)GaEt2, 2 (Dipp = 2,6-iPr2C6H3), usi
Hydroalumination versus deprotonation of alkynes with sterically demanding substituents
Uhl, Werner,Layh, Marcus,Rhotert, Ines,Wollschlaeger, Agnes,Hepp, Alexander
, p. 503 - 517 (2013/07/26)
Treatment of sterically highly shielded terminal alkynes, H-C≡C-aryl, with dialkylaluminium and dialkylgallium hydrides, R2E-H, afforded by hydrogen release dimeric dialkylelement alkynides with a four-membered E 2C2 heterocycle independent of the bulk of the aryl groups. A rare example of a monomeric alkynylaluminium compound was only obtained with very bulky CH(SiMe3)2 groups attached to the metal atoms and by salt elimination reaction. The steric shielding by the bulky aryl groups did not prevent condensation reactions. Hydroalumination of 1-(trimethylsilyl)-2-(2,6-dimethylphenyl)ethyne using Me2Al-H resulted in a divinyl compound by elimination of trimethyl-aluminium.
PROCESS FOR PREPARING TRIALKYL COMPOUNDS OF METALS OF GROUP IIIA
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Page/Page column 17-18, (2013/06/27)
The invention relates to a process for preparing trialkylmetal compounds of the general formula R3M (where M = metal of group llIA of the Periodic Table of the Elements (PTE), preferably gallium or indium, and R = C1-C5-alkyl, preferably methyl or ethyl). The process is based on the reaction of metal trichloride (MeCl3) with alkylaluminium sesquichloride (R3AI2CI3) in the presence of at least one alkali metal halide as auxiliary base. The reaction mixture is heated to a temperature above 120°C and the trialkylmetal compound is separated off from the reaction mixture via a separator, with partially alkylated products being at the same time recirculated to the reaction mixture. In a further step, the reaction mixture is heated to a maximum of 350°C and the remaining alkylated and partially alkylated products are separated off. The products obtained in this way can optionally be recycled in the process. The process displays a high yield of trialkylmetal compound and also a high metal utilization; the products are used as precursors for MOCVD processes.
PROCESS FOR PREPARING TRIALKYLGALLIUM COMPOUNDS
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Page/Page column 21, (2013/06/27)
The invention relates to a process for preparing trialkylgallium compounds of the general formula R3Ga. The process is based on the reaction of gallium trichloride (GaCh), optionally in a mixture with partially alkylated products, with an alkylaluminium compound of the type RaAICIb (where R = C1-C5-alkyl, a = 1, 2 or 3, b = 0, 1 or 2 and a + b = 3) in the presence of at least two alkali metal halides (e.g. NaCI and KCI) as auxiliary base. Preference is given to using alkylaluminium sesquichloride (R3AI2CI3) or trialkylaluminium (R3AI). The reaction mixture is heated to a temperature in the range from 120°C to 250°C and the trialkylgallium compound formed is separated off via a separator which is operated at a temperature which is more than 30°C below the boiling point of the most volatile partially alkylated product. Complete alkylation is achieved here and partially alkylated products are recirculated to the reaction mixture. In a further step, the reaction mixture can be heated to a maximum of 350°C and the remaining fully alkylated and partially alkylated products can be separated off. The process provides a high yield of trialkylgallium compound and displays high gallium utilization; the products are used, e.g., as precursors for MOCVD processes.
Synthesis and characterization of single-source precursors to nanocrystalline GaP, GaPxAs1-x, and GaPxSb1-x. X-ray crystal structures of [Et2GaP(SiMe3)2]2, (Me3Si)2P[μ-GaEt2]2As(SiMe 3)2
Jouet, Richard J.,Wells, Richard L.,Rheingold, Arnold L.,Incarvito, Christopher D.
, p. 191 - 198 (2007/10/03)
The 1:1 mole ratio reaction of Et2GaCl with P(SiMe3)3 resulted in the formation of [Et2GaP(SiMe3)2]2 (1). The mixed-pnicogen compounds (Me3Si)2P[μ-GaEt2]2As(SiMe 3)2 (2) and (Me3Si)2P[μ-GaEt2]2Sb(SiMe 3)2 (3) were prepared from the 2:1:1 mole ratio reactions of Et2GaCl with P(SiMe3)3 and As(SiMe3)3 and P(SiMe3)3 and Sb(SiMe3)3, respectively. Compounds 2 and 3 were also synthesized by comproportionation reactions of 1 and [Et2GaAs(SiMe3)2]2, and 1 and [Et2GaSb(SiMe3)2]2, respectively. Characterization of 1, 2, and 3 was accomplished using multinuclear NMR, elemental analysis, mass spectrometry, and single-crystal X-ray crystallographic analysis. The X-ray crystal structures of compounds 1, 2 and 3 are reported. Thermolysis of 1, 2, and 3 results in the formation of nanocrystalline GaP, GaPxAs1-x, or GaPxSb1-x, respectively. Compound 3 represents the first example of a compound containing a P(μ-Ga)2Sb core.
Monomeric organogallium-nitrogen compounds. Chemistry of Et2GaNH[C6H2(2,4,6-t-Bu)3] with decomposition to the metallacycle {EtGaNH[C6H2(4,6-t-Bu)2CMe2CH 2-2]}2 and of EtGa{NH[C6H2(2,4,6-t-Bu)3]}2
Beachley Jr.,Rosenblum, Daniel B.,Churchill, Melvyn Rowen,Churchill, David George,Krajkowski, Lynn M.
, p. 2543 - 2549 (2008/10/08)
Two monomeric gallium-nitrogen compounds, Et2GaNH[C6H2(2,4,6-t-Bu)3] and EtGa{NH-[C6H2(2,4,6-t-Bu)3]}2, have been prepared by metathetical reactions between either Et2GaCl or EtGaCl2, as appropriate, and LiNH[C6H2(2,4,6-t-Bu)3] and have been characterized fully. Cryoscopic molecular weight studies demonstrated both compounds to be monomeric in benzene solution, whereas an X-ray structural study of the latter identified a monomer. The compound Et2GaNH[C6H2(2,4,6-t-Bu)3] decomposes at room temperature to form a new metallacyclic derivative {EtGaNH[C6H2(4,6-t-Bu)2(CMe2CH 2-2)]}2 GaEt3, and H2N[C6H2-(2,4,6-t-Bu)3]. A 1H NMR spectral study and an X-ray structural study were used to elucidate its structure. The compound EtGa{NH[C6H2(2,4,6-t-Bu)3]}2 does not decompose to the metallacycle, but it reacts readily with GaEt3 to form Et2GaNH[C6H2(2,4,6-t-Bu)3].
