30914-08-0

Basic information

• Product Name: DIETHYLGALLIUM CHLORIDE
• Synonyms: DIETHYLGALLIUM CHLORIDE;Gallium 8-hydroxyquinolinate,99+%;Gallium-diethylchlorid;Diethylchlorogallium
• CAS NO: 30914-08-0
• Molecular Formula: C₄H₁₀ClGa
• Molecular Weight: 163.3
• EINECS: 250-387-7
• Mol File: 30914-08-0.mol
• Article Data: 6

Chemical Properties

• Boiling Point: 60-62°C
• Flash Point: °C
• Appearance: /
• Density: 1,135 g/cm3
• CAS DataBase Reference: DIETHYLGALLIUM CHLORIDE(CAS DataBase Reference)
• NIST Chemistry Reference: DIETHYLGALLIUM CHLORIDE(30914-08-0)
• EPA Substance Registry System: DIETHYLGALLIUM CHLORIDE(30914-08-0)

Safety Data

• Statements: 11-14-34
• Safety Statements: 16-26-43
• RIDADR: 3399
• TSCA: No
• Hazardous Substances Data: 30914-08-0(Hazardous Substances Data)

Usage

InChI:InChI=1/2C2H5.ClH.Ga/c2*1-2;;/h2*1H2,2H3;1H;/q;;;+1/p-1/rC4H10ClGa/c1-3-6(5)4-2/h3-4H2,1-2H3

Upstream product

• 13450-90-3 Gallium trichloride 
• 1115-99-7 triethyl gallium 
• 31121-29-6 triethylgallium diethyl ether adduct 
• 557-20-0 diethylzinc 

Downstream Products

• 189024-46-2 dimethyl(2,6-diisopropylphenyltrimethylsilylamino)gallane 
• 203209-46-5 Et2Ga(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato) 
• 230310-74-4 Et₂Ga(NH[C₆H₂(2,4,6-t-Bu)3]) 
• 330199-62-7 Et₂GaNMe[C₆H₂(2,4,6-t-Bu)3] 

Relevant articles and documents

Catalytic Reduction of Carbon Dioxide Using Cationic Organoaluminum and -Gallium Compounds

Ethide abstraction from Et3M (M = Al and Ga), (2,6-Ph2C6H3)AlEt2, 1, and (2,6-Dipp2C6H3)GaEt2, 2 (Dipp = 2,6-iPr2C6H3), usi

PROCESS FOR PREPARING TRIALKYL COMPOUNDS OF METALS OF GROUP IIIA

The invention relates to a process for preparing trialkylmetal compounds of the general formula R3M (where M = metal of group llIA of the Periodic Table of the Elements (PTE), preferably gallium or indium, and R = C1-C5-alkyl, preferably methyl or ethyl). The process is based on the reaction of metal trichloride (MeCl3) with alkylaluminium sesquichloride (R3AI2CI3) in the presence of at least one alkali metal halide as auxiliary base. The reaction mixture is heated to a temperature above 120°C and the trialkylmetal compound is separated off from the reaction mixture via a separator, with partially alkylated products being at the same time recirculated to the reaction mixture. In a further step, the reaction mixture is heated to a maximum of 350°C and the remaining alkylated and partially alkylated products are separated off. The products obtained in this way can optionally be recycled in the process. The process displays a high yield of trialkylmetal compound and also a high metal utilization; the products are used as precursors for MOCVD processes.

Synthesis and characterization of single-source precursors to nanocrystalline GaP, GaPxAs1-x, and GaPxSb1-x. X-ray crystal structures of [Et2GaP(SiMe3)2]2, (Me3Si)2P[μ-GaEt2]2As(SiMe 3)2

The 1:1 mole ratio reaction of Et2GaCl with P(SiMe3)3 resulted in the formation of [Et2GaP(SiMe3)2]2 (1). The mixed-pnicogen compounds (Me3Si)2P[μ-GaEt2]2As(SiMe 3)2 (2) and (Me3Si)2P[μ-GaEt2]2Sb(SiMe 3)2 (3) were prepared from the 2:1:1 mole ratio reactions of Et2GaCl with P(SiMe3)3 and As(SiMe3)3 and P(SiMe3)3 and Sb(SiMe3)3, respectively. Compounds 2 and 3 were also synthesized by comproportionation reactions of 1 and [Et2GaAs(SiMe3)2]2, and 1 and [Et2GaSb(SiMe3)2]2, respectively. Characterization of 1, 2, and 3 was accomplished using multinuclear NMR, elemental analysis, mass spectrometry, and single-crystal X-ray crystallographic analysis. The X-ray crystal structures of compounds 1, 2 and 3 are reported. Thermolysis of 1, 2, and 3 results in the formation of nanocrystalline GaP, GaPxAs1-x, or GaPxSb1-x, respectively. Compound 3 represents the first example of a compound containing a P(μ-Ga)2Sb core.