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13450-90-3

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13450-90-3 Usage

Chemical Properties

Different sources of media describe the Chemical Properties of 13450-90-3 differently. You can refer to the following data:
1. white crystals or powder
2. Gallium trichloride is a colorless solid which forms needle-like crystals. Acidic odor.

Uses

Different sources of media describe the Uses of 13450-90-3 differently. You can refer to the following data:
1. Lewis acid catalyst in organic synthesis; reagent for generating organogallium compounds, metallic gallium, and gallium semiconductors.
2. Gallium(III) chloride is a catalyst for a number of transformations including the ring opening and recyclization of epoxides and the trimerization of alkynes. It is used to detect the solar neutrions.

Production Methods

The trichloride salt of trivalent gallium is prepared by the action of either hydrogen chloride or chlorine on the metal.

General Description

Colorless needles. Used as a raw material in the production of metallic gallium and in the processing of mono crystal semiconductor compounds.

Air & Water Reactions

Water soluble.

Reactivity Profile

GALLIUM(III) CHLORIDE acts as a weak inorganic acid. Materials in this group are generally soluble in water. The resulting solutions contain moderate concentrations of hydrogen ions and have pH's of less than 7.0. They react as acids to neutralize bases. These neutralizations generate heat, but less or far less than is generated by neutralization of inorganic acids, inorganic oxoacids, and carboxylic acid. They usually do not react as either oxidizing agents or reducing agents but such behavior is not impossible. Many of these compounds catalyze organic reactions.

Health Hazard

(Non-Specific -- Gallium Compounds) In view of the toxicity of gallium and its compounds, as shown by experiments, all persons involved in work with these substances should undergo periodic medical examinations, during which special attention should be paid to the condition of the liver, respiratory organs, and skin.

Fire Hazard

Emits toxic chloride fumes when heated to decomposition. Decomposes upon sufficient heating.

Potential Exposure

Used as a raw material in the produc tion of metallic gallium; and in the processing of mono crystal, semiconductor compounds.

Shipping

UN3260 Corrosive solid, acidic, inorganic, n.o.s., Hazard class: 8; Labels: 8-Corrosive material, Technical Name Required. UN1759 Corrosive solids, n.o.s., Hazard class: 8; Labels: 8-Corrosive material, Technical Name required.

Purification Methods

The pure compound can be obtained by redistillation in a stream of Cl2 or Cl2/N2 followed by vacuum sublimation or zone refining. It forms colourless needles which give gallium dichloride [Ga(GaCl4), m 172.4o] on heating. It dissolves in H2O with liberation of heat. It is soluble in Et2O and can be extracted from an HCl solution with Et2O. [Laubengayer & Schirmer J Am Chem Soc 62 1579 1940, D.nges in Handbook of Preparative Inorganic Chemistry (Ed. Brauer) Academic Press Vol I p 846 1963.]

Check Digit Verification of cas no

The CAS Registry Mumber 13450-90-3 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,3,4,5 and 0 respectively; the second part has 2 digits, 9 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 13450-90:
(7*1)+(6*3)+(5*4)+(4*5)+(3*0)+(2*9)+(1*0)=83
83 % 10 = 3
So 13450-90-3 is a valid CAS Registry Number.
InChI:InChI=1/3ClH.Ga/h3*1H;/q;;;+3/p-3

13450-90-3 Well-known Company Product Price

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  • Alfa Aesar

  • (45026)  Gallium(III) chloride, ultra dry, 99.999% (metals basis)   

  • 13450-90-3

  • 5g

  • 553.0CNY

  • Detail
  • Alfa Aesar

  • (45026)  Gallium(III) chloride, ultra dry, 99.999% (metals basis)   

  • 13450-90-3

  • 25g

  • 1544.0CNY

  • Detail
  • Alfa Aesar

  • (45026)  Gallium(III) chloride, ultra dry, 99.999% (metals basis)   

  • 13450-90-3

  • 100g

  • 4846.0CNY

  • Detail
  • Alfa Aesar

  • (43879)  Gallium(III) chloride, ultra dry, 99.999% (metals basis)   

  • 13450-90-3

  • 5g

  • 522.0CNY

  • Detail
  • Alfa Aesar

  • (43879)  Gallium(III) chloride, ultra dry, 99.999% (metals basis)   

  • 13450-90-3

  • 25g

  • 1468.0CNY

  • Detail
  • Alfa Aesar

  • (43879)  Gallium(III) chloride, ultra dry, 99.999% (metals basis)   

  • 13450-90-3

  • 100g

  • 4550.0CNY

  • Detail
  • Alfa Aesar

  • (35698)  Gallium(III) chloride, ultra dry, 99.999% (metals basis)   

  • 13450-90-3

  • 5g

  • 643.0CNY

  • Detail
  • Alfa Aesar

  • (35698)  Gallium(III) chloride, ultra dry, 99.999% (metals basis)   

  • 13450-90-3

  • 25g

  • 2868.0CNY

  • Detail
  • Alfa Aesar

  • (35698)  Gallium(III) chloride, ultra dry, 99.999% (metals basis)   

  • 13450-90-3

  • 100g

  • 12629.0CNY

  • Detail
  • Aldrich

  • (427128)  Gallium(III)chloride  beads, anhydrous, ≥99.999% trace metals basis

  • 13450-90-3

  • 427128-5G

  • 468.00CNY

  • Detail
  • Aldrich

  • (427128)  Gallium(III)chloride  beads, anhydrous, ≥99.999% trace metals basis

  • 13450-90-3

  • 427128-25G

  • 1,318.59CNY

  • Detail
  • Aldrich

  • (427128)  Gallium(III)chloride  beads, anhydrous, ≥99.999% trace metals basis

  • 13450-90-3

  • 427128-100G

  • 6,364.80CNY

  • Detail

13450-90-3SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 10, 2017

Revision Date: Aug 10, 2017

1.Identification

1.1 GHS Product identifier

Product name Gallium(III) chloride

1.2 Other means of identification

Product number -
Other names trichlorogallane

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only. Intermediates,Solvents (which become part of product formulation or mixture)
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:13450-90-3 SDS

13450-90-3Synthetic route

gallium
7440-55-3

gallium

chlorine
7782-50-5

chlorine

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In melt 5 mol% excess of gaseous chlorine passed through metal gallium melt;99%
excess Cl2;;
mixt. heating (two-section glass tube, 200-250°C); vac. sublimation (water pump, ca. 250°C);
gallium hydrogen dichloride
13886-65-2

gallium hydrogen dichloride

1,2,4,5-tetrakis((trimethylsilyl)ethynyl)benzene
98127-35-6

1,2,4,5-tetrakis((trimethylsilyl)ethynyl)benzene

A

C6H2((CHC(Si(CH3)3))2GaCl(O(C2H5)2))2
950696-91-0

C6H2((CHC(Si(CH3)3))2GaCl(O(C2H5)2))2

B

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In hexane under Ar; soln. of HGaCl2 in n-hexane treated with soln. of (Me3SiC2)4C6H2 in n-hexane at room temp.; heated under reflux for 14 h; filtered; ppt. washed with n-hexane; treated with Et2O; filtered; filtrate concd.; cooled to -45°C; elem. anal.;A 46%
B n/a
gallium(III) oxide

gallium(III) oxide

ammonium chloride

ammonium chloride

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent) heating up to 250 °C;;
In neat (no solvent) heating up to 250 °C;;
gallium(III) oxide

gallium(III) oxide

thionyl chloride
7719-09-7

thionyl chloride

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent) 200°C;;
In neat (no solvent) 200°C;;
gallium(III) oxide

gallium(III) oxide

tetrachlorosilane
10026-04-7, 53609-55-5

tetrachlorosilane

A

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
300-350°C in vac.; Two-fold vacuum sublimation with prior distilling off SiCl4.;
gallium
7440-55-3

gallium

silver(I) chloride
7783-90-6

silver(I) chloride

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent, solid phase) byproducts: Ag; oven (cf. Grabandt, de Lange, Mooyman, Chem. Phys. Lett. 160 (1989) 359) filled with a mixt. of gallium metal and AgCl, oven temp. between 700 to 900°C, inner ionization chamber kept at low temp.; not isolated, detected by photoelectron spectra;
gallium arsenide

gallium arsenide

A

Gallium trichloride
13450-90-3

Gallium trichloride

B

arsenic trichloride
7784-34-1

arsenic trichloride

Conditions
ConditionsYield
With Cl2 Kinetics; GaAs wafer, 25-150°C, pressure from 0.09 to 20 Torr of Cl2;
trimethyl gallium
1445-79-0

trimethyl gallium

A

Gallium trichloride
13450-90-3

Gallium trichloride

B

dimethylchlorogallane
6917-81-3

dimethylchlorogallane

C

methylgallium dichloride
6917-74-4

methylgallium dichloride

Conditions
ConditionsYield
With HCl In neat (no solvent, gas phase)
With HCl In diethyl ether
gallium
7440-55-3

gallium

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
With chlorine In neat (no solvent) Ar atmosphere; chlorination by 120°C; distn. (flow of chloridine), resublimation (flow of Ar);
With Cl2 200-250°C;
With Cl2 chlorination; sublimation;
hydrogenchloride
7647-01-0

hydrogenchloride

gallium
7440-55-3

gallium

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
gentle heating;;
In neat (no solvent) Ga metal was dissolved in concd. HCl;
hydrogenchloride
7647-01-0

hydrogenchloride

gallium
7440-55-3

gallium

A

hydrogen
1333-74-0

hydrogen

B

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent) heating of Ga in a stream of dry HCl at 200 - 400 °C;; distillation at 200 - 400 °C;;
In neat (no solvent) heating of Ga in a stream of dry HCl at 200 - 400 °C;; distillation at 200 - 400 °C;;
In neat (no solvent) moderate heating of Ga in a stream of dry HCl;; excess of HCl is removed by distillation in CO2 stream (traces of brown-yellow residue are formed);;
gallium
7440-55-3

gallium

chlorine
7782-50-5

chlorine

A

gallium(III) chloride

gallium(III) chloride

B

Gallium trichloride
13450-90-3

Gallium trichloride

C

gallium(II) chloride

gallium(II) chloride

Conditions
ConditionsYield
In gaseous matrix co-deposition of Ga (heated from molybdenum or graphite cell to 1150 °C) and a Cl2/Ar mixt. (1:100 - 1:200) on to a polished Cu surface at 14-17 K;; IR;
gallium(III) chloride

gallium(III) chloride

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent) dissociation observable above 273 °C;; vapor density measurements;;
In neat (no solvent) complete dissociation above 440 °C;; vapor density measurements;;> 99
In gaseous matrix heating in Ar-flow (5-10 mmol/h, up to 900 K); condensing at 12 K; vibration spectroscopy;
GaCl3*PCl5
127735-01-7

GaCl3*PCl5

A

Gallium trichloride
13450-90-3

Gallium trichloride

B

chlorine
7782-50-5

chlorine

C

phosphorus trichloride

phosphorus trichloride

Conditions
ConditionsYield
complex dissociation in temp. range 100-500°C; tensimetric equilibrium monitoring;
gallium
7440-55-3

gallium

silver(I) chloride
7783-90-6

silver(I) chloride

A

gallium chloride
17108-85-9

gallium chloride

B

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent, solid phase) byproducts: Ag; oven (cf. Grabandt, de Lange, Mooyman, Chem. Phys. Lett. 160 (1989) 359) filled with a mixt. of gallium metal and AgF, comparatively high temps.; not isolated, detected by photoelectron spectra;

A

gallium(III) oxide

gallium(III) oxide

B

Gallium trichloride
13450-90-3

Gallium trichloride

gallium(III) oxide

gallium(III) oxide

Dichlorodifluoromethane
75-71-8

Dichlorodifluoromethane

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent)
cadmium(II) selenide

cadmium(II) selenide

GaSeCl

GaSeCl

A

Cd2GaSe3Cl

Cd2GaSe3Cl

B

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent, solid phase) mixt. of the starting materials heated in evacuated sealed quartz tubes to 500-900°C; decompn. of educts ocurrs, GaCl3 sublimates off;A 0%
B n/a
zinc(II) selenide

zinc(II) selenide

GaSeCl

GaSeCl

A

Zn2GaSe3Cl

Zn2GaSe3Cl

B

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent) mixt. of the starting materials heated in evacuated sealed quartz tubes to 500-900°C; decompn. of educts ocurrs, GaCl3 sublimates off;A 0%
B n/a
zinc telluride

zinc telluride

GaTeCl

GaTeCl

A

Zn2GaTe3Cl

Zn2GaTe3Cl

B

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent) mixt. of the starting materials heated in evacuated sealed quartz tubes to 500-900°C; decompn. of educts ocurrs, GaCl3 sublimates off;A 0%
B n/a
gallium(I) tetrachlorogallate(III)
24597-12-4

gallium(I) tetrachlorogallate(III)

A

gallium
7440-55-3

gallium

B

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
With water In water Kinetics; calorimetric monitoring;
gallium(II) chloride

gallium(II) chloride

A

gallium
7440-55-3

gallium

B

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent) decompn. during sublimation;;
In neat (no solvent) decompn. during sublimation;;
gallium(II) chloride

gallium(II) chloride

A

gallium(III) chloride

gallium(III) chloride

B

gallium(III) chloride

gallium(III) chloride

C

GaGaCl4

GaGaCl4

D

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent, gas phase) heating to 445 K; identification by mass spectroscopy and electron diffraction;
gallium(III) oxide

gallium(III) oxide

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
With chlorine Kinetics; byproducts: O2; 400-850°C; reaction products identified by X-ray diffraction and chem. anal.;
gallium(III) oxide

gallium(III) oxide

chlorine
7782-50-5

chlorine

A

sulfur trioxide
7446-11-9

sulfur trioxide

B

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
With sulfur dioxide In neat (no solvent) Kinetics; byproducts: O2; temps. above 500°C; reaction products identified by X-ray diffraction and chem. anal.;
gallium(III) oxide

gallium(III) oxide

chlorine
7782-50-5

chlorine

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent) Kinetics; byproducts: O2; 400-850°C; reaction products identified by X-ray diffraction and chem. anal.;
gallane
13572-93-5

gallane

Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
With hydrogenchloride byproducts: H2; at -95°C, excess of anhydrous HCl;>99
hydrogen sulfide
7783-06-4

hydrogen sulfide

Gallium trichloride
13450-90-3

Gallium trichloride

gallium trichloride*hydrogen sulfide
98773-19-4

gallium trichloride*hydrogen sulfide

Conditions
ConditionsYield
In dichloromethane under N2, H2S introduced in soln. of GaCl3 in CH2Cl2 at -78°C for 15 min, further stirred for 1h at -78°C; evapn. of solvent at -20°C, dried in vac. for 3h at -20°C, elem. anal.;100%
Gallium trichloride
13450-90-3

Gallium trichloride

ethanethiol
75-08-1

ethanethiol

trichlorogallium * ethanethiol
98773-05-8, 115958-66-2

trichlorogallium * ethanethiol

Conditions
ConditionsYield
In benzene slow addn. of ethanethiol to a suspn. of an equimolar amt. of GaCl3 in benzene; mixt. stirred for 1 h at room temp.; solvent distd. off in vac. at 60°C; elem. anal.;100%
In benzene under N2, dropwise addn. of thiol soln. to a suspension of GaCl3 in benzene, dissoln.of GaCl3, stirred for 15 min at room temp.; evapn. of solvent, dried in vac. at room temp. for 3h, elem. anal.;100%
1-thiopropane
107-03-9

1-thiopropane

Gallium trichloride
13450-90-3

Gallium trichloride

(gallium trichloride)propanethiol
98773-06-9

(gallium trichloride)propanethiol

Conditions
ConditionsYield
In benzene under N2, dropwise addn. of thiol soln. to a suspension of GaCl3 in benzene, dissoln. of GaCl3, stirred for 15 min at room temp.; evapn. of solvent, dried in vac. at room temp. for 3h, elem. anal.;100%
Gallium trichloride
13450-90-3

Gallium trichloride

2-propanethiol
75-33-2

2-propanethiol

gallium trichloride*2-propanethiol
98773-07-0

gallium trichloride*2-propanethiol

Conditions
ConditionsYield
In benzene under N2, dropwise addn. of thiol soln. to a suspension of GaCl3 in benzene, dissoln.of GaCl3, stirred for 15 min at room temp.; evapn. of solvent, dried in vac. at room temp. for 3h, elem. anal.;100%
methyl methylphenylphosphinate
6389-79-3

methyl methylphenylphosphinate

Gallium trichloride
13450-90-3

Gallium trichloride

poly(gallium methylphenylphosphinate)

poly(gallium methylphenylphosphinate)

Conditions
ConditionsYield
In further solvent(s) byproducts: MeCl; slow heating in neat Ph(Me)P(O)OMe until complete pptn.; particle size and polymerization degree depending on heating rate;100%
trimethylsilyl cyanide
7677-24-9

trimethylsilyl cyanide

Gallium trichloride
13450-90-3

Gallium trichloride

gallium monocyanide

gallium monocyanide

Conditions
ConditionsYield
In neat (no solvent) byproducts: Me3SiCl; (inert atm.); stirring (room temp. 6 h, 60°C 60 h, 75°C 4 h); byprod. and educt excess removal (vac.), washing (hexane), drying (vac.);100%
D-1,2-(1-benzyloxy-2-oxopyridine-6-carboximide)bactin

D-1,2-(1-benzyloxy-2-oxopyridine-6-carboximide)bactin

Gallium trichloride
13450-90-3

Gallium trichloride

D-1,2-(1-hydroxy-2-oxopyridine-6-carboximide)bactin Ga(III)

D-1,2-(1-hydroxy-2-oxopyridine-6-carboximide)bactin Ga(III)

Conditions
ConditionsYield
In not given mixting GaCl3 and benzyl protected D-1,2-hopobactin; after reaction was complete, pH was adjusted to 8; chromy.;99%
L-1,2-(1-benzyloxy-2-oxopyridine-6-carboximide)bactin

L-1,2-(1-benzyloxy-2-oxopyridine-6-carboximide)bactin

Gallium trichloride
13450-90-3

Gallium trichloride

L-1,2-(1-hydroxy-2-oxopyridine-6-carboximide)bactin Ga(III)

L-1,2-(1-hydroxy-2-oxopyridine-6-carboximide)bactin Ga(III)

Conditions
ConditionsYield
In not given mixting GaCl3 and benzyl protected L-1,2-hopobactin; after reaction was complete, pH was adjusted to 8; chromy.;99%
tribenzylgallium
18797-34-7

tribenzylgallium

Gallium trichloride
13450-90-3

Gallium trichloride

C6H5CH2GaCl2
304854-91-9

C6H5CH2GaCl2

Conditions
ConditionsYield
In toluene uner Ar; stoich. amts. of compounds stirred at 20°C for 48 h in toluene; solvent evapd. in vac.;99%
trimethylsilyl cyanide
7677-24-9

trimethylsilyl cyanide

Gallium trichloride
13450-90-3

Gallium trichloride

indium(III) chloride
10025-82-8

indium(III) chloride

0.5In(3+)*0.5Ga(3+)*3CN(1-)=In0.5Ga0.5(CN)3

0.5In(3+)*0.5Ga(3+)*3CN(1-)=In0.5Ga0.5(CN)3

Conditions
ConditionsYield
In diethyl ether; hexane byproducts: Me3SiCl; N2-atmosphere; dropwise addn. of stoic. mixt. of metal salts (in ether) to Me3SiCN (in hexane), stirring for 12 h; collection (filtration), heating in hexane (several h), washing (hexane);99%
Al(3+)*C33H48N2O2(2-)*Cl(1-)=Al(C33H48N2O2)Cl
242488-86-4

Al(3+)*C33H48N2O2(2-)*Cl(1-)=Al(C33H48N2O2)Cl

Gallium trichloride
13450-90-3

Gallium trichloride

[Al(C33H48N2O2)]2(2+)*2GaCl4(1-)=[Al(C33H48N2O2)]2[GaCl4]2

[Al(C33H48N2O2)]2(2+)*2GaCl4(1-)=[Al(C33H48N2O2)]2[GaCl4]2

Conditions
ConditionsYield
In dichloromethane stirring (25°C, 6 h); solvent removal (vac.), hexanes addn., cooling (-30°C, 1 d, crystn.), filtration, drying (vac.); elem. anal.;99%
Gallium trichloride
13450-90-3

Gallium trichloride

tetraphenyl phosphonium chloride
2001-45-8

tetraphenyl phosphonium chloride

chromium(0) hexacarbonyl
199620-14-9, 13007-92-6

chromium(0) hexacarbonyl

bis(triphenylphosphoranylidene)ammonium bis[(dichlorogallio)pentacarbonylchromate]

bis(triphenylphosphoranylidene)ammonium bis[(dichlorogallio)pentacarbonylchromate]

Conditions
ConditionsYield
With C8K In tetrahydrofuran byproducts: KCl, graphite; inert atmosphere; treatment of Cr(CO)6 with C8K, addn. of 1 equiv. GaCl3at -78°C (stirring), warming to room temp., standing for 3.5 h, addn. of slight excess PPNCl, standing for 1 h; filtration, washing of residue (THF), solvent removal (vac.), washing (Et2O); elem. anal.;99%
ethanol
64-17-5

ethanol

Gallium trichloride
13450-90-3

Gallium trichloride

(μ5-oxo)pentachloroocta(μ-ethoxide)pentagallium
1116690-06-2

(μ5-oxo)pentachloroocta(μ-ethoxide)pentagallium

Conditions
ConditionsYield
With sodium In ethanol byproducts: HCl, NaCl; N2, Na dissolved at room temp., GaCl3 added, refluxed for 5-6 h, left overnight; ppt. removed, solvents evapd. to drynss (vac.), suspd. (toluene), ppt. treated with CH3CN/toluene, soln. stored for 5 mn; elem. anal.;99%
Gallium trichloride
13450-90-3

Gallium trichloride

Conditions
ConditionsYield
In neat (no solvent, solid phase) (Ar); solid state reaction; equimolar mixt. of TlCl, and GaCl3 sealed under vac. in glass ampoules; heated with 10°C/h to 150°C for 48 h; cooled to 25°C with 2.degre.C/h; detn. by XRD;99%
[bis(4-allyl-3-thiosemicarbazonato)acenaphthenequinone]zinc(II)

[bis(4-allyl-3-thiosemicarbazonato)acenaphthenequinone]zinc(II)

Gallium trichloride
13450-90-3

Gallium trichloride

[gallium(III) chloride bis(4-allyl-3-thiosemicarbazonate)acenaphthenequinone]*3(methanol)

[gallium(III) chloride bis(4-allyl-3-thiosemicarbazonate)acenaphthenequinone]*3(methanol)

Conditions
ConditionsYield
In methanol addn. of Zn compd. in MeOH to GaCl3, heating under reflux for 2 h or stirring overnight;99%
In methanol addn. of Zn compd. in MeOH to GaCl3, heating under reflux for 6 h (or 2 h) or stirring overnight; isolation as mixture of symmetric and asymmetric isomers; cooling to room temp., filtration, washing with Et2O, drying under vacuum, elem. anal.;54%
zinc bis(4-methyl-3-thiosemicarbazonate)acenaphthenequinone

zinc bis(4-methyl-3-thiosemicarbazonate)acenaphthenequinone

Gallium trichloride
13450-90-3

Gallium trichloride

gallium(III) chloride bis(4-methyl-3-thiosemicarbazonate)acenaphthenequinone

gallium(III) chloride bis(4-methyl-3-thiosemicarbazonate)acenaphthenequinone

Conditions
ConditionsYield
In methanol addn. of Zn compd. in MeOH to GaCl3, heating under reflux for 2 h or stirring overnight;99%
In methanol addn. of Zn compd. in MeOH to GaCl3, heating under reflux for 6 h; isolation as symmetric and asymmetric isomers (1.3:1); cooling to room temp., filtration, washing with Et2O, drying under vacuum, elem. anal.;36%
tris(di-tert-butyphosphino)gallane
140194-63-4

tris(di-tert-butyphosphino)gallane

Gallium trichloride
13450-90-3

Gallium trichloride

Ga(tBu2P)2Cl

Ga(tBu2P)2Cl

Conditions
ConditionsYield
In benzene under Ar and N2; at room temp.; elem. anal.;99%
2K(1+)*Zr6B(13+)*15Cl(1-)=K2(Zr6B)Cl15

2K(1+)*Zr6B(13+)*15Cl(1-)=K2(Zr6B)Cl15

Gallium trichloride
13450-90-3

Gallium trichloride

acetonitrile
75-05-8

acetonitrile

(Zr6B)Cl12(CH3CN)6(1+)*GaCl4(1-)*CH3CN=(Zr6B)Cl12(CH3CN)6(GaCl4)*CH3CN

(Zr6B)Cl12(CH3CN)6(1+)*GaCl4(1-)*CH3CN=(Zr6B)Cl12(CH3CN)6(GaCl4)*CH3CN

Conditions
ConditionsYield
In acetonitrile byproducts: KCl; CH3CN added to metal complex, sealed in a glass ampule, kept at 100°C for 3-4 d, filtered (Ar), treated with excess of GaCl3, sealed, heated at 100°C for 12 h; evapd. slowly;99%
Gallium trichloride
13450-90-3

Gallium trichloride

lithium hydride

lithium hydride

lithium tetrahydridogallate

lithium tetrahydridogallate

Conditions
ConditionsYield
In tetrahydrofuran byproducts: LiCl; slow addn. of GaCl3 to 64% excess of freshly ground LiH (during 4 h, 5-10°C), stirring for 2 h; filtration, evapn. of filtrate, dissoln. in ether, evapn., dissoln. in THF;98%
In tetrahydrofuran byproducts: LiCl; slow addn. of GaCl3 to 25% excess of freshly ground LiH, stirring for 1-2 h (total reaction time 4.5 h; 5-10°C); evapn., dissoln. in ether;96%
In diethyl ether byproducts: LiCl; slow addn. of GaCl3 to 73% excess of freshly ground LiH (over 1 h, 8-10°C), stirring for 1.5 h;96%
Gallium trichloride
13450-90-3

Gallium trichloride

lithium hydride

lithium hydride

lithium tetrahydridogallate

lithium tetrahydridogallate

Conditions
ConditionsYield
In tetrahydrofuran byproducts: LiCl; Li-compd. grinding in solvent, excess suspn. treating with Ga-salt soln.(three-necked flask, 5-10°C, 4 h, stirring), further stirring fo r 2 h, soln. filtration, evapn. to paste, treatment with ether (LiCl removal); sol. evapn., ppt. dissoln. in THF;98%
In diethyl ether byproducts: LiCl; Ga-salt soln. addn. to excess Li-compd. suspn. (three-necked flask, 8-10°C, 1 h, stirring), further stirring for 1.5 h, soln. filtration,evapn. to paste, treatment with ether (LiCl removal); Ga-complex isolation according to: L. I. Zakharkin, V. V. Gavrilenko, Yu. N. Karaksin, Zhur. Obshch. Khim. 41 (1973) 2689;96%
potassium dihydrobis(pyrazol-1-yl)borate

potassium dihydrobis(pyrazol-1-yl)borate

Gallium trichloride
13450-90-3

Gallium trichloride

A

dihydro-bis(1-pyrazolyl)borate acid
18583-65-8

dihydro-bis(1-pyrazolyl)borate acid

B

(acetato)bis{dihydrobis(1-pyrazolyl)borato}gallium(III)
127916-05-6

(acetato)bis{dihydrobis(1-pyrazolyl)borato}gallium(III)

Conditions
ConditionsYield
With NaO2CCH3 In tetrahydrofuran N2-atmosphere; mixing of borate and AcONa, addn. to GaCl3 soln. (-78°C), stirring and warming to room temp. during 8 h; evapn. (vac.), extn. (benzene), filtration, evapn. (vac.), recrystn. (benzene/hexane, 0°C); elem. anal.;A n/a
B 98%

13450-90-3Relevant articles and documents

Thermogravimetric study of GaAs chlorination between -30 and 900 °c

Tunez, Fernando M.,Gonzalez, Jorge A.,Ruiz, María Del C.

, p. 124 - 136 (2011)

Gallium (as GaAs) is at present an essential part of electronic devices, and the recovery of this element from electronic wastes is fundamental for the metallurgic industry. In this work, with the aim of recovering Ga by chlorination, the following reacti

The binary Ph2PCl/GaCl3 system: A room-temperature molten medium for P-P bond formation

Weigand, Jan J.,Burford, Neil,Decken, Andreas

, p. 4343 - 4347 (2008)

An equimolar reaction mixture of Ph2PCl and GaCl3 at room temperature results in the formation of a melt M consisting of the donor-acceptor complex Ph2PCl→GaCl3 (1a), the chloro(diphenylphosphanyl)diphenylphosphonium cation (2a), and the counteranions [GanCl3n+1]- (n = 1, 2, 3). The melt has been characterized by Raman and NMR spectroscopy and is compared with the reaction mixture of Ph2PCl and GaCl3 observed in solution (CH 2Cl2). The melt provides a facile and reactive source of the diphenylphosphenium cation, as demonstrated with use for P-P bond insertion into (PhP)5, to give the 2,3,4,5-tetraphosphanyl-1,4-diphosphonium dication (3), and reductive coupling with gallium metal to give the diadduct Cl3GaPPh2PPh2GaCl3 (5). Wiley-VCH Verlag GmbH & Co. KGaA, 2008.

Thermodynamic characteristics of gaseous GaCl3pyz and GaCl 3pyzGaCl3 complexes

Timoshkin,Berezovskaya,Suvorov,Misharev

, p. 1173 - 1179 (2005)

Thermodynamic characteristics of vaporization and gas-phase dissociation of the complexes GaCl3pyz and GaCl3pyzGaCl3 (pyz is pyrazine) were determined by static tensimetry with a membrane zero gage. Structural and thermodynamic characteristics of the complexes were calculated by the B3LYP/pVDZ quantum-chemical method.

Gallium alkoxides: Synthesis and properties

Suslova,Turova,Mityaev,Kepman,Gohil

, p. 665 - 675 (2008)

Compounds Ga(OR)3 (R = Me, Et, Pri, Bun, C2H4OMe) were synthesized by exchange reactions between gallium chloride and alkali metal alkoxides, the reetherefication of Ga(OPr i)3 and Ga(OC2H4OMe)3 by other ROH (R = Me, Et), and anodic dissolution of metallic gallium in the presence of a electroconductive additive (LiCl, Bu4NBr). When solid GaCl3 is introduced into an alcoholic solution of NaOEt, stable soluble gallium oxoalkoxyhalides are formed. The same reaction with a GaCl 3 solution in toluene or electrochemical synthesis produces nonvolatile Ga(OEt)3 samples, which have the polymer zigzag configuration [Ga(OR)4/2(OR)]∞. Mass spectrometry shows that only Ga(OPri)3 and freshly prepared X-ray amorphous Ga(OEt)3 samples (produced by reetherefication) are transferred to the gas phase. The spectra of the latter contain ions generated by penta-and hexanuclear oxoalkoxide molecules, along with fragments of orthospecies [Ga(OEt)3]2-4. IR spectra are described for all compounds synthesized.

Batyaev, I. M.,Danil'chuck, N. V.,Kabatskii, Yu. A.,Shapovalov, V. N.,Shilov, S. M.

, (1989)

Porous fluorinated aluminum and mixed gallium/aluminum oxide pillared tin phosphate materials with acid properties

Braos-Garci?a, Pilar,Rodri?guez-Castello?n, Enrique,Maireles-Torres, Pedro,Olivera-Pastor, Pascual,Jime?nez-Lo?pez, Antonio

, p. 1672 - 1678 (1998)

Fluorinated aluminum and mixed gallium/aluminum oligomers of high nuclearity have been intercalated into α-tin phosphate by refluxing fluorinated Al and mixed Ga/Al oligomeric solutions in the presence of colloidal tin phosphate. 31P and 27Al MAS NMR spectroscopy has revealed the existence of strong interactions between the phosphate layers and the oligomeric guest species, conferring to these expanded materials a high thermal stability, as confirmed by XRD studies. Formation of Al and mixed Ga/Al oxide nanoparticle pillars in the interlayer region of tin phosphate, upon calcination at 400 °C, gave rise to porous materials with specific surface areas between 160 and 304 m2 g-1 and micropore volumes close to 0.1 cm3 g-1. The pillared materials are highly acidic solids and behave as dehydrating catalysts for the decomposition reaction of isopropyl alcohol. The Lewis acid sites, believed to be mainly responsible for the catalytic activity, are associated with low coordination sites of Al ions present in the interlayer oxide pillars.

Controlled synthesis of monodispersed AgGaS2 3D nanoflowers and the shape evolution from nanoflowers to colloids

Yuan, Yanping,Zai, Jiantao,Su, Yuezeng,Qian, Xuefeng

, p. 1227 - 1235 (2011)

Monodispersed AgGaS2 three-dimensional (3D) nanoflowers have been successfully synthesized in a soft-chemical system with the mixture of 1-octyl alcohol and cyclohexane as reaction medium and oleylamine as surfactant. The crystal phase, morphology and chemical composition of the as-prepared products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and high-resolution TEM (HTEM), respectively. Results reveal that the as-synthesized AgGaS2 nanoflowers are in tetragonal structure with 3D flower-like shape. Controlled experiments demonstrated that the shape transformation of AgGaS2 nanocrystals from 3D nanoflowers (50 nm) to nanoparticles (1020 nm) could be readily realized by tuning the reaction parameters, e.g., the ratio of octanol to cyclohexane, the length of carbon chain of fatty alcohol, the concentration of oleylamine, etc. The UVvis and PL spectra of the obtained AgGaS2 nanoflowers and colloids were researched. In addition, the photoelectron energy conversion (SPV) of AgGaS 2 nanoflowers was further researched by the surface photovoltage spectra.

Activation of metallic aluminum by tin and gallium chlorides in oxidation with water

Burlakova,Shilkin,Kravchenko,Dremova,Kravchenko,Ivanov,Bulychev

, p. 238 - 243 (2012/07/02)

We have studied the effect of gallium chloride and tin chloride solutions on the water oxidation of aluminum at SnCl2 concentrations of 0.68 and 6.32 wt %, GaCl3 concentrations of 0.56 and 2.67 wt %, and MCln : Al(M = Sn, Ga; n = 2, 3) molar ratios from 0.017 to 0.3. The results indicate that, when aluminum is oxidized in the presence of these salts, the reaction rate and hydrogen yield increase with reaction temperature and salt concentration and reach the highest levels when a mixture of gallium and tin chlorides is used. The reaction products are identified and the likely mechanism of the processes involved in the oxidation of aluminum is discussed. Pleiades Publishing, Ltd., 2012.

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