31052-46-7

Usage

Uses

Used in Semiconductor Industry:
Dicesium selenide is used as a raw material for the production of semiconductors. Its unique electronic properties make it a promising candidate for use in various semiconductor applications, contributing to the development of advanced electronic devices.
Used in Solid-State Electrolyte Industry:
Dicesium selenide serves as a key component in the development of solid-state electrolytes. Its ionic conductivity and stability make it suitable for use in energy storage and conversion devices, such as solid-state batteries and fuel cells.
Used in Synthesis of Other Seleno-Compounds:
Dicesium selenide is utilized as a precursor in the synthesis of other selenide compounds. Its reactivity allows for the formation of various selenide materials with different properties and applications.
Used in Optoelectronic Devices:
Due to its interesting optical properties, dicesium selenide is employed in the development of optoelectronic devices. Its potential use in light-emitting diodes (LEDs), photodetectors, and solar cells highlights its significance in the optoelectronic industry.

InChI:InChI=1/2Cs.Se/q2*+1;-2

Upstream product

• 7782-49-2 selenium 
• 7704-34-9 sulfur 
• 7440-46-2 caesium 
• 7440-45-1 cerium 

Relevant academic research and scientific papers

[Fe24Se26]: A Host-Guest Compound with Unique Fe-Se Topology

The novel host-guest compound [Cs6Cl][Fe24Se26] (I4/mmm; a=11.0991(9), c=22.143(2) ?) was obtained by reacting Cs2Se, CsCl, Fe, and Se in closed ampoules. This is the first member of a family of compounds with unique Fe-Se topology, which consists of edge-sharing, extended fused cubane [Fe8Se6Se8/3] blocks that host a guest complex ion, [Cs6Cl]5+. Thus Fe is tetrahedrally coordinated and divalent with strong exchange couplings, which results in an ordered antiferromagnetic state below TN=221 K. At low temperatures, a distribution of hyperfine fields in the M?ssbauer spectra suggests a structural distortion or a complex spin structure. With its strong Fe-Se covalency, the compound is close to electronic itinerancy and is, therefore, prone to exhibit tunable properties.

Homologous Series of 2D Chalcogenides Cs-Ag-Bi-Q (Q = S, Se) with Ion-Exchange Properties

Four new layered chalcogenides Cs1.2Ag0.6Bi3.4S6, Cs1.2Ag0.6Bi3.4Se6, Cs0.6Ag0.8Bi2.2S4, and Cs2Ag2.5Bi8.5Se15 are described. Cs1.2Ag0.6Bi3.4S6 and Cs1.2Ag0.6Bi3.4Se6 are isostructural and have a hexagonal P63/mmc space group; their structures consist of [Ag/Bi]2Q3 (Q = S, Se) quintuple layers intercalated with disordered Cs cations. Cs0.6Ag0.8Bi2.2S4 also adopts a structure with the hexagonal P63/mmc space group and its structure has an [Ag/Bi]3S4 layer intercalated with a Cs layer. Cs1.2Ag0.6Bi3.4S6 and Cs0.6Ag0.8Bi2.2S4 can be ascribed to a new homologous family Ax[MmS1+m] (m = 1, 2, 3···). Cs2Ag2.5Bi7.5Se15 is orthorhombic with Pnnm space group, and it is a new member of the A2[M5+nSe9+n] homology with n = 6. The Cs ions in Cs1.2Ag0.6Bi3.4S6 and Cs0.6Ag0.8Bi2.2S4 can be exchanged with other cations, such as Ag+, Cd2+, Co2+, Pb2+, and Zn2+ forming new phases with tunable band gaps between 0.66 and 1.20 eV. Cs1.2Ag0.6Bi3.4S6 and Cs0.6Ag0.8Bi2.2S4 possess extremely low thermal conductivity (-1·K-1).

Polychalcogenoaurates(I) with pseudo-onedimensional structures: Preparation and crystal structure of Cs2Au2Se3

Cs2Au2Se3 was obtained as red platelike crystals by reacting a stoichiometric mixture of Cs2Se, Au and Se at 670K. It crystallizes in space group C2/c, Z = 4 with a = 9.769(5) A, b = 13.44(1) A, c = 7.178(3) A, β = 90.69(1)°. The crystal structure was determined from single crystal data and refined to a conventional R of 0.042 for 674 Fo's and 34 variables. The characteristic structural feature of this new selenoaurate is the formation of infinite helical anionic chains, ∞1-[AuSeAuSe2]2- which run parallel to [001] and are separated by the alkali cations. The average Au-Se bond length is 2.402 A, the bond length in the Sea-unit is 2.436 A. Au...Au contacts of 3.200 A are formed within the anionic chains. The cesium atoms are coordinated to seven Se in an irregular configuration. Elsevier,.

Panoramic Synthesis as an Effective Materials Discovery Tool: The System Cs/Sn/P/Se as a Test Case

The common approach to the synthesis of a new material involves reactions held at high temperatures under certain conditions such as heating in a robust vessel in the dark for a period until it is judged to have concluded. Analysis of the vessel contents afterward provides knowledge of the final products only. Intermediates that may form during the reaction process remain unknown. This lack of awareness of transient intermediates represents lost opportunities for discovering materials or understanding how the final products form. Here we present new results using an emerging in situ monitoring approach that shows high potential in discovering new compounds. In situ synchrotron X-ray diffraction studies were conducted in the Cs/Sn/P/Se system. Powder mixtures of Cs2Se2, Sn, and PSe2 were heated to 650 °C and then cooled to room temperature while acquiring consecutive in situ synchrotron diffraction patterns from the beginning to the end of the reaction process. The diffraction data was translated into the relationship of phases present versus temperature. Seven known crystalline phases were observed to form on warming in the experiment: Sn, Cs2Se3, Cs4Se16, Cs2Se5, Cs2Sn2Se6, Cs4P2Se9, and Cs2P2Se8. Six unknown phases were also detected; using the in situ synchrotron data as a guide three of them were isolated and characterized ex situ. These are Cs4Sn(P2Se6)2, α-Cs2SnP2Se6, and Cs4(Sn3Se8)[Sn(P2Se6)]2. Cs4(Sn3Se8)[Sn(P2Se6)]2 is a two-dimensional compound that behaves as an n-type doped semiconductor below 50 K and acts more like a semimetal at higher temperatures. Because all crystalline phases are revealed during the reaction, we call this approach panoramic synthesis .

Flexible polar nanowires of Cs5BiP4Se12 from weak interactions between coordination complexes: Strong nonlinear optical second harmonic generation

The Cs5BiP4Se12 salt grows naturally as nanowires that crystallize in the polar space group PmC21, with a = 7.5357(2) A, b = 13.7783(6) A, c = 28.0807(8) A, and Z = 4 at 293(2) K. The compound features octahedra

The one-dimensional polyselenide compound CsGaSe3

A new one-dimensional phase, CsGaSe3 has been synthesized and characterized by single crystal X-ray diffraction, differential thermal analysis, and single crystal UV/Vis spectroscopy. The structure contains infinite chain anions, [GaSe(Se2)]- separated by Cs cations. The Ga3+ cation is in a distorted tetrahedral environment coordinated by each two Se2- and Se22- ions. The red crystals of CsGaSe3 absorb visible light at energies above 2.25 eV. Differential thermal analysis revealed that the compound does not melt below 1000°C. Crystal data: CsGaSe3, monoclinic, space group P21/c (No 14), a=7.727(1), b=13.014(3), c=6.705(1), β=106.39(3)°, Z=4, R1=0.0469.

Homologous Alkali Metal Copper Rare-Earth Chalcogenides A2Cu2 nLn4Q7+ n(n = 1, 2, 3)

Twenty-seven new members of the A2Cu2nLn4Q7+n (A = Cs, Rb; Ln = La-Nd, Sm, Gd-Yb; Q = S, Se) homologous series were synthesized in one of three structural types (indicated by n = 1, 2, 3). All the compounds contained 3D frameworks with alkali-metal-containing tunnels. For each increment in n, one Cu2Q was added, which was incorporated into the framework as an edge-sharing tetrahedron by replacing a square planar chalcogenide site. High-throughput DFT calculations predicted many of the phases to be thermodynamically stable. These predictions were compared with the synthesis results for the phases formed in each composition space. In the syntheses, heavier lanthanides showed a preference to start forming the n = 3 ACu3Ln2Q5, which is consistent with the predictions. RbCuNd2Se4 and RbCuTb2Se4 were found to be thermally stable under vacuum at temperatures up to 1000 °C. Optical measurements revealed band gaps of 1.55(5) and 1.62(5) eV for CsCuCe2Se4 and RbCuTb2Se4, respectively, and a work function of 4.83(5) eV for CsCuPr2Se4. Additionally, some n = 3 ACu3Ln2Q5 compounds exhibit a negative phonon mode because of a copper atom coordination, which may distort to a trigonal planar geometry at sufficiently low temperatures. The dynamic instabilities and the predicted distortion in the copper tetrahedra for the n = 3 ACu3Ln2Q5 compounds were found to have a linear relationship with the atomic number of the lanthanides and the electronegativity of the lanthanides. The A2Cu2nLn4Q7+n compounds can potentially find application as high-temperature thermoelectric materials and other semiconductors.

Vast Structural and Polymorphic Varieties of Semiconductors AMM′Q4(A = K, Rb, Cs, Tl; M = Ga, In; M′ = Ge, Sn; Q = S, Se)

Nine new chalcogenide semiconductors AInM′Q4 (A+ = K+, Rb+, Cs+, Tl+ M′4+ = Ge4+, Sn4+ Q2- = S2-, Se2-) have been prepared by solid-state syntheses and structurally characterized by single-crystal X-ray diffraction techniques. These new phases fill in the missing links in these quaternary systems and crystallize in various two-dimensional layered polymorphs, while combinations containing large M3+ and M′4+ cations also adopt an extended three-dimensional (3D) network structure. The AMM′Q4 materials exhibit a wide range of band gaps with colored selenides (1.8 eV Eg 2.3 eV) and mostly white sulfides (2.5 eV Eg 3.6 eV). These phases have direct band gaps except for the thallium analogues and the cubic AGaSnSe4-cP84. First-principles theoretical calculations of the electronic band structures reveal critical insight into the structure/property relationships of these materials. The distinct polymorphism of these quaternary phases is studied by discussing kinetic and thermodynamic factors responsible for the crystallization, structural considerations, and complementary density functional theory (DFT) calculations.

Layered and Cubic Semiconductors AGa M′ Q4(A+= K+, Rb+, Cs+, Tl+M′4+= Ge4+, Sn4+Q2-= S2-, Se2-) and High Third-Harmonic Generation

Eighteen new quaternary chalcogenides AGaM′Q4 (A+ = K+, Rb+, Cs+, Tl+ M′4+ = Ge4+, Sn4+ Q2- = S2-, Se2-) have been prepared by solid-state syntheses and structurally characterized using single-crystal X-ray diffraction techniques. These new phases crystallize in a variety of layered structure types. The tin analogues also adopt an extended three-dimensional network structure as polymorphs. The polymorphism and phase-stability in these cases were studied by thermal analysis and high-temperature in situ X-ray powder diffraction. All compounds are semiconductors with the colored selenides absorbing light in the infrared-green region (1.8 eV a large band gap and shows stability under ambient conditions with no significant irradiation damage.

One-Dimensional Zinc Selenophosphates: A2ZnP2Se6(A = K, Rb, Cs)

The new compounds A2ZnP2Se6(A = K, Rb, Cs) were synthesized via molten salt flux syntheses. The crystals feature one-dimensional1/∞[ZnP2Se6]2–chains charge balanced by alkali metal ions between the chains. K2ZnP2Se6crystallizes in the monoclinic space group P21/c; cell parameters a = 12.537(3) ?, b = 7.2742(14) ?, c = 14.164(3) ?, β = 109.63(3)°, Z = 4, and V = 1216.7(4) ?3. Rb2ZnP2Se6and Cs2ZnP2Se6are isotypic, crystallizing in the triclinic space group P21/c. Rb2ZnP2Se6has cell parameters of a = 7.4944(15) ?, b = 7.6013(15) ?, c = 12.729(3) ?, α = 96.57(3)°, β = 105.52(3)°, γ = 110.54(3)°, Z = 2, and V = 636.6(2) ?3. Cs2ZnP2Se6has cell parameters of a = 7.6543(6) ?, b = 7.7006(6) ?, c = 12.7373(11) ?, α = 97.007(7)°, β = 104.335(7)°, γ = 109.241(6)°, Z = 2, and V = 669.54(10) ?3.