332350-43-3Relevant academic research and scientific papers
FRET-based probe for fluoride based on a phosphorescent iridium(iii) complex containing triarylboron groups
Xu, Wenjuan,Liu, Shujuan,Sun, Huibin,Zhao, Xinyan,Zhao, Qiang,Sun, Shi,Cheng, Shan,Ma, Tingchun,Zhou, Lixia,Huang, Wei
, p. 7572 - 7581 (2011)
An excellent F- probe (complex 1) based on carbazole-fluorene- carbazole (CzFCz) as a fluorescent donor and a cationic Ir(iii) complex unit containing dimesitylboryl (Mes2B) groups as a phosphorescent acceptor has been designed and synthesized. Several reference compounds, such as complex 2 which is similar to complex 1 but without Mes2B groups, fluorescent donor CzFCz, and phosphorescent acceptors A1 and A2, were also synthesized in order to better understand the influence of Mes2B groups on the excited state properties and fluorescence resonance energy transfer (FRET) in this system. The introduction of Mes2B groups on the ligands of the Ir(iii) complex unit can lead to a red-shifted and more intense absorption, facilitating efficient FRET from the fluorescent donor to the phosphorescent acceptor. Complex 1 displayed highly efficient orange-red phosphorescent emission with an emission peak at 584 nm in CH2Cl 2 solution at room temperature. The emission wavelength of complex 1 in film is red-shifted to 600 nm with a shoulder at 650 nm, and its quantum efficiency in film was measured to be 0.15 under excitation at 450 nm. Utilizing the specific Lewis acid-base interactions between boron atom and F-, the binding of F- to complex 1 can change its excited state and suppress FRET, quenching the phosphorescent emission from the Ir(iii) complex and enhancing the fluorescent emission from CzFCz. Thus, a visual change in the emission color from orange-red to blue was observed. Optical responses of complex 1 to F- revealed that it can be used as a highly selective, colorimetric and ratiometric optical probe for F- utilizing the switchable phosphorescence and fluorescence.
A bidentate ligand neutral iridium complex and its preparation method and application
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, (2017/08/24)
The invention relates to a neutral iridium complex with a bidentate ligand, and a preparation method and application thereof, and belongs to the technical field of photoelectric functional organic materials. The invention concretely relates to the prepara
Conjugated polymers with cationic iridium(iii) complexes in the side-chain for flash memory devices utilizing switchable through-space charge transfer
Liu, Shu-Juan,Lin, Wen-Peng,Yi, Ming-Dong,Xu, Wen-Juan,Tang, Chao,Zhao, Qiang,Ye, Shang-Hui,Liu, Xiang-Mei,Huang, Wei
, p. 22964 - 22970 (2013/01/15)
Polycarbazole and polyfluorene containing cationic iridium(iii) complexes in the side-chain have been designed and synthesized. Both polymers have been demonstrated to show conductance switching behavior and non-volatile flash memory devices based on them were successfully realized, in which the formation and dissociation of through-space charge-transfer states from the conjugated polymer sea to the Ir(iii) complex island , controlled by voltage, are responsible for the conductance switching behavior and memory effect. The devices exhibit low reading, writing, and erasing voltages and a high ON/OFF current ratio. Both ON and OFF states are stable up to 10 7 read cycles at a read voltage of -1.0 V. Due to the different chemical structures of the polymer main-chain, the two devices show different threshold voltages. The polycarbazole derivative exhibits higher HOMO and LUMO levels compared with the polyfluorene analogue. Thus, the threshold voltage from the OFF to ON state of the device based on the polycarbazole derivative is obviously lower than that of the polyfluorene derivative-based device because of the low energy barrier between the work function of the ITO anode and the HOMO level of the polycarbazole derivative. Similarly, the threshold voltage from the ON to OFF state is evidently higher because the energy barrier of electron injection from Al into the LUMO of the polycarbazole derivative is slightly higher than that of the polyfluorene analogue. Thus, the threshold voltages of memory devices may be rationally modulated by modifying the chemical structure of polymers.
