33292-37-4Relevant academic research and scientific papers
DEPOSITION PROCESSES USING GROUP 8 (VIII) METALLOCENE PRECURSORS
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Page 33-36, (2010/02/07)
Disclosed herein is a process for producing a film, coating or powder employing a metallocene or metallocene-like precursor having the general formula CpMCp', where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D1, where D1 is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C=0)Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2(C=0)OCa1Hb1Xc1; or Ca2Hb2Xc2O(C=0)Ca1Hb1Xc1; and Cp' is a second substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D1', where D1' is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C=0)Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2(C=0)OCa1Hb1Xc1; or Ca2Hb2Xc2O(C=0)Ca1Hb1Xc1. D1 and D1' are different from one another. X is a halogen atom or NO2; a1 is an integer between 1 to 8; b1 is an integer between 0 and 2(a1)+1-c1; c1 is an integer between 0 and 2(a1)+1 -b1; b1 + c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2) + 1 - c2; andc2 is an integer between 0 and 2(a2) + 1 - b2. The process can be used in manufacturing or processing electronic devices.
