37300-76-8Relevant academic research and scientific papers
Electron-impact ionization cross sections of the SiF3 free radical
Hayes, Todd R.,Shul, Randy J.,Baiocchi, Frank A.,Wetzel, Robert C.,Freund, Robert S.
, p. 4035 - 4041 (1988)
Absolute cross sections for electron-impact ionization of the SiF3 free radical from threshold to 200 eV are presented for formation of the parent SiF3 ion and the fragment SiF2 , SiF+, and Si+ ions.A 3 keV beam of SiF3 is prepared by near-resonant charge transfer of SiF3 with 1,3,5-trimethylbenzene.The beam contains only ground electronic state neutral radicals, but with as much as 1.5 eV of vibrational energy.The absolute cross section for formation of the parent ion at 70 eV is 0.67 +/- 0.09 Angstroem2.At 70 eV the formation of SiFi2+ is the major process, having a cross section 2.51 +/- 0.02 times larger than that of the parent ion, while the SiF+ fragment has a cross section 1.47 +/- 0.08 times larger than the parent.Threshold measurements show that ion pair dissociation processes make a significant contribution to the formation of positively charged fragment ions.
Reactions of Ar+, Ne+, and He+ with SiF4 from thermal energy to 50 eV c.m.
Weber, M. E.,Armentrout, P. B.
, p. 2213 - 2224 (2007/10/02)
Guided ion-beam techniques are used to measure the cross sections for reaction of SiF4 with Ar+, Ne+, and He+ from thermal to 50 eV.Charge transfer followed by loss of F atoms are the sole processes observed.All SiFx+
Electron impact ionization cross sections of SiF2
Shul, Randy J.,Hayes, Todd R.,Wetzel, Robert C.,Baiocchi, Frank A.,Freund, Robert S.
, p. 4042 - 4047 (2007/10/02)
Absolute cross sections are measured for electron impact ionization and dissociative ionization of SiF2 from threshold to 200 eV.A fast (3 keV) neutral beam of SiFz is formed by charge transfer neutralization of SiF2+ with Xe; it is primarily in the ground electronic state with about 10percent in the metastable first excited electronic state (3B1).The absolute cross section for ionization of the ground state by 70 eV electrons to the parent SiF2+ is 1.38 +/- 0.18 Angstroem2.Formation of SiF+ is the major process with a cross section at 70 eV of 2.32 +/- 0.30 Angstroem2.The cross section at 70 eV for formation of the Si fragment ion is 0.48 +/- 0.08 Angstroem2.Ion pair production contributes a significant fraction of the positively charged fragment ions.
