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37853-61-5

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37853-61-5 Usage

Uses

Tetrabromobisphenol A Dimethyl Ether is the microbial methylated byproduct of flame retardant Tetrabromobisphenol-A.

Check Digit Verification of cas no

The CAS Registry Mumber 37853-61-5 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 3,7,8,5 and 3 respectively; the second part has 2 digits, 6 and 1 respectively.
Calculate Digit Verification of CAS Registry Number 37853-61:
(7*3)+(6*7)+(5*8)+(4*5)+(3*3)+(2*6)+(1*1)=145
145 % 10 = 5
So 37853-61-5 is a valid CAS Registry Number.

37853-61-5Downstream Products

37853-61-5Relevant articles and documents

Microbial O-methylation of the flame retardant tetrabromobisphenol-A

George, Kevin W.,Haeggblom, Max M.

, p. 5555 - 5561 (2008)

We demonstrated the O-methylation of tetrabromobisphenol-A (TBBPA) [4,4′-isopropylidenebis (2,6-dibromophenol)] to its mono- and dimethyl ether derivatives by microorganisms present in different sediments. A most probable number assay of a marsh sediment suggested that up to 10% of the total aerobic heterotrophs may be capable of O-methylation. Although TBBPA dimethyl ether is not produced in industry, it has been detected in terrestrial and aquatic sediments. Our study supports the hypothesis that TBBPA dimethyl ether is a product of microbial O-methylation. The O-methylation of TBBPA, as well as its analog, tetrachlorobisphenol-A (TCBPA), was also demonstrated in cultures of two chlorophenol-metabolizing bacteria, Mycobacterium fortuitum CG-2 and Mycobacterium chlorophenolicum PCP-I. These strains also mediated the O-methylation of 2,6-dibromophenol and 2,6-dichlorophenol, analogs of TBBPA and TCBPA, to their corresponding anisoles, but 2,6-fluorophenol was not transformed. Due to the addition of hydrophobic methyl groups, O-methylated derivatives are more lipophilic, increasing the probability of bioaccumulation in the food chain. Future research regarding the toxicological effects of the O-methylated derivatives of TBBPA is recommended and will further elucidate potential risks to environmental and human health.

Preparation method for simultaneously synthesizing tetrabromobisphenol A monomethyl ether and dimethyl ether

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Paragraph 0029-0056, (2020/06/05)

The invention relates to a preparation method for simultaneously synthesizing tetrabromobisphenol A monomethyl ether and dimethyl ether. The preparation method comprises the steps: dissolving TBBPA into acetonitrile; deprotonating with sodium hydroxide, adding methyl iodide, heating to perform methylation reaction, cooling in an ice bath after the reaction is finished, dissolving and cleaning withdichloromethane, filtering, dewatering and concentrating to obtain a concentrated solution, and separating and purifying the concentrated solution by adopting medium-pressure preparative chromatography to obtain tetrabromobisphenol A monomethyl ether and tetrabromobisphenol A dimethyl ether simultaneously. Monomethyl ether and dimethyl ether of TBBPA can be obtained at the same time only throughone-step reaction, and especially the high yield of monomethyl ether is guaranteed; meanwhile, the post-treatment steps are simplified, and losses caused by multiple times of extraction in an existingmethod are avoided; the medium-pressure preparative chromatography adopts silica gel column chromatography, is suitable for purification of constant samples, can accurately separate components in theproduct through real-time control, and ensures the purity of the product.

Molecular glass photoresists containing bisphenol a framework and method for preparing the same and use thereof

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Page/Page column 9, (2016/10/17)

The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.

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