40849-11-4Relevant academic research and scientific papers
Semiconductor element
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, (2007/10/09)
PROBLEM TO BE SOLVED: To enable the stable formation of a p-type ohmic electrode having a sufficiently low contact resistance on a boron phosphide based semiconductor layer. SOLUTION: A boron phosphide based semiconductor device 10 (11) comprises at least a p-type boron phosphide system semiconductor layer 104 and a p-type ohmic electrode 105 formed thereon, wherein the p-type ohmic electrode 105 is formed of an alloy of nickel and boron. COPYRIGHT: (C)2006,JPOandNCIPI
SYNTHESES OF 4-HYDROXYMETHYL-1(2H)-PHTALAZINONE AND ITS ANALOGS.
Ishikawa, Masayuki,Eguchi, Yukuo
, p. 25 - 30 (2007/10/02)
4-Hydroxymethyl-1(2H)-phthalazinone (2) was preferably prepared by reduction of 4-ethoxycarbonyl-1(2H)-phtalazinone with NaBH4 in EtOH in good yield.The synthetic method was applicable for the preparation of 7-ethoxycarbonyl-4-hydroxymethyl-1(2H)-phthalazinone and its 2-phenyl derivative, where the regioselective reduction of the ester at the position 4 was possible, leaving the ester at the position 7 intact.The Grignard reaction of 4-ethoxycarbonyl-1(2H)-phthalazinone was also described.
