4358-40-1Relevant academic research and scientific papers
Doping of an organic molecular semiconductor by substitutional cocrystallization with a molecular n-dopant
Porter Jr., William W.,Vaid, Thomas P.
, p. 469 - 475 (2008/02/03)
Dopants for organic molecular semiconductors that yield immobile dopant ions are necessary for the creation of stable molecular semiconductor p-n junctions, the basis for almost all traditional inorganic semiconductor devices. We present evidence for the substitutional cocrystallization of tris(4-nitrophenyl)methyl radical (1) with small amounts of tris[4- (dimethylamino)phenyl]methyl radical (2), resulting in n-doped 1 with immobile 2+ counterions. Cyclic voltammetry indicates that electron transfer from 2 to 1 is favored by 0.51 eV. The powder X-ray diffraction patterns of pure 1 and 1 doped with 2 are very similar, indicating substitutional cocrystallization. The electrical conductivity of doped 1 increases with increasing concentration of 2, and the conductivity is constant over time. Variable-temperature conductivity measurements of 1 doped with 2% and 5% 2 indicate that the activation energy of conduction is 0.32 eV at both dopant concentrations. The Royal Society of Chemistry 2007.
Photooxidation of Leuco Dyes. VIII. Time Resolved Investigations of the Mechanism of the Photooxidation of Leucocrystal Violet
Hinzmann, G.,Grummt, U.-W.,Paetzold, R.
, p. 899 - 909 (2007/10/02)
The photooxidation of leucocrystal violet has been reexamined by means of conventional and laser flash photolysis as well as spin trap experiments.Three radical transients have been observed and assigned to the caton radical (λmax ca. 490, 530 nm), the neutral radical with one -NCH3-CH2 moiety (λmax ca. 480 nm) and the triphenyl methyl radical derivative (λmax ca. 400 nm).
