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Diethyl (4-bromophenyl)phosphonite is an organophosphorus compound with the chemical formula C10H14BrO2P. It is a colorless liquid at room temperature and is soluble in common organic solvents. diethyl (4-bromophenyl)phosphonite is characterized by a phosphorus atom bonded to two ethyl groups and a 4-bromophenyl group, which is a phenyl ring with a bromine atom at the para position. It is used as an intermediate in the synthesis of various pharmaceuticals and agrochemicals, particularly in the production of pesticides and other specialty chemicals. Due to its reactivity and potential applications, diethyl (4-bromophenyl)phosphonite is an important building block in the field of organic chemistry.

4762-34-9

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4762-34-9 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 4762-34-9 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 4,7,6 and 2 respectively; the second part has 2 digits, 3 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 4762-34:
(6*4)+(5*7)+(4*6)+(3*2)+(2*3)+(1*4)=99
99 % 10 = 9
So 4762-34-9 is a valid CAS Registry Number.

4762-34-9Relevant academic research and scientific papers

USE OF PHOSPHINE OXIDE COMPOUNDS IN A SEMICONDUCTING LAYER COMPRISED IN AN ELECTRONIC DEVICE

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Page/Page column 54; 55, (2018/12/13)

The present invention relates to the use of a compound represented by the general formula (I) wherein A1 and A2 are independently selected from C1 to C60 carbon-containing groups; A3 to A9 are independently selected from hydrogen, C1 to C60 carbon-containing groups, or halogen; R1 and R2 are independently selected from C1 to C60 carbon-containing groups which are attached to the phosphorous atom by a sp3-hybridized carbon atom; X is a single covalent bond or a spacer group consisting of 1 to 120 covalently bound atoms; in a semiconducting layer comprised in an electronic device, a respective semiconducting layer, a respective electronic device and respective compounds.

ORGANIC SEMICONDUCTIVE LAYER COMPRISING PHOSPHINE OXIDE COMPOUNDS

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Page/Page column 93, (2017/06/29)

The present invention relates to an. organic semiconductive layer which is an electron transport layer and/or an electron injection layer and/or an n-type charge generation layer, the organic semiconductive layer comprising at least one compound of formula (1) wherein R1 and R2 are each independently selected from C1 to C16 alkyl; Ar1 is selected from C6 to C14 arylene or C3 to C12 heteroarylene; Ar2 is independently selected from C14 to C40 arylene or C8 to C40 heteroarylene; R3 is independently selected from H, C1 to C12 alkyl or C10 to C20 aryl; wherein each of Ar1, Ar2 and R3 may each independently be uesubstituted or substituted with at least one C1 to C12 alky group; n is 0 or 1; and m is 1 in case of n = 0; and m is 1 or 2 in case of n = 1, phosphine oxide compounds comprised therein and to organic electroluminescent devices comprising such layers and compounds.

Crystal packing effects on the magnetic slow relaxation of TB(III)-nitronyl nitroxide radical cyclic dinuclear clusters

Pointillart, Fabrice,Bernot, Kevin,Poneti, Giordano,Sessoli, Roberta

, p. 12218 - 12229 (2013/01/15)

Four lanthanide-based nitronyl nitroxide radical cyclic molecular clusters of formula [Ln(hfac)3(NITPhPO(OEt)2)]2 (Ln III = Gd (1), Tb (2A and 2B), and Dy (3) and NITPhPO(OEt)2 = 4'-[2-(1-oxyl-3-4,4,5,5-tetramethylimidazoline)phenyl]diethoxylphosphine oxide) have been synthesized. Their X-ray structures have been solved and highlight two different crystal packings. For the particular case of the Tb III derivative, both of them can be obtained. In 2A, the molecules are well-isolated, while 2B shows short contacts between N-O radical groups. Static magnetic studies on the GdIII derivative (1) demonstrate that lanthanides and radicals are ferromagnetically coupled (J = 3.46 ± 0.04 cm-1). Dynamic magnetic studies show that both compounds 2A and 2B exhibit single molecule magnet behavior. A comparison of their magnetic behaviors highlights that the crystal packing has a crucial influence on the temperature range in which the SMM behavior is observed. In the case of the well-insulated TbIII-based derivative (2A), the SMM behavior is observed at higher temperatures and lower frequencies than for the one that presents close-packing between the molecules (2B). Comparisons are then possible only under an applied external magnetic field (0.2 T) with Δ = 27.5(6) and 21.0(5) K and τ0 = 2.64(25) × 10-9 and 1.76(20) × 10-9 s for 2A and 2B, respectively.

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