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Benzoic acid, 2-[[4-(1,1-dimethylethyl)phenyl]thio]-, also known as 2-(4-tert-butylphenylthio)benzoic acid, is an organic compound with the chemical formula C16H18O2S. It is a white crystalline solid that is soluble in organic solvents and has a molecular weight of 278.38 g/mol. Benzoic acid, 2-[[4-(1,1-dimethylethyl)phenyl]thio]- is primarily used as an intermediate in the synthesis of various pharmaceuticals, agrochemicals, and other specialty chemicals. It is characterized by its aromatic structure, featuring a benzoic acid group and a phenylthio group, with a tert-butyl group attached to the phenyl ring, which contributes to its stability and reactivity in chemical reactions.

5495-80-7

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5495-80-7 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 5495-80-7 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 5,4,9 and 5 respectively; the second part has 2 digits, 8 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 5495-80:
(6*5)+(5*4)+(4*9)+(3*5)+(2*8)+(1*0)=117
117 % 10 = 7
So 5495-80-7 is a valid CAS Registry Number.

5495-80-7Relevant academic research and scientific papers

Positive resist composition, resist pattern forming process, and photomask blank

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Page/Page column 57; 59, (2019/10/01)

A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

Negative resist composition and resist pattern forming process

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Page/Page column 69, (2018/11/24)

A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

NOVEL SULPHONIUM COMPOUND AND METHOD FOR PRODUCING THE SAME, RESIST COMPOSITION, AND PATTERN FORMING METHOD

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Paragraph 0167; 0168, (2017/12/01)

PROBLEM TO BE SOLVED: To provide a resist composition that gives a resist film excellent in resolution, LWR, MEF and CDU, in far-ultraviolet lithography and EUV lithography, and provide a sulphonium compound for use therein, and provide a pattern forming method using the resist composition. SOLUTION: The present invention provides a sulphonium compound represented by the following formula (1) (where R1, R2 and R3 independently represent a C1-20 linear, branched or cyclic monovalent hydrocarbon group, which may contain a hetero atom. p and q independently represent an integer of 0-5. r is an integer of 0-4). SELECTED DRAWING: None COPYRIGHT: (C)2018,JPOandINPIT

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