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55544-28-0

55544-28-0

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55544-28-0 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 55544-28-0 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 5,5,5,4 and 4 respectively; the second part has 2 digits, 2 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 55544-28:
(7*5)+(6*5)+(5*5)+(4*4)+(3*4)+(2*2)+(1*8)=130
130 % 10 = 0
So 55544-28-0 is a valid CAS Registry Number.

55544-28-0SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 15, 2017

Revision Date: Aug 15, 2017

1.Identification

1.1 GHS Product identifier

Product name 2,5-dihydro-1H-silol-1-ylsilane

1.2 Other means of identification

Product number -
Other names 1-silanyl-2,5-dihydro-1H-silole

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:55544-28-0 SDS

55544-28-0Upstream product

55544-28-0Downstream Products

55544-28-0Relevant articles and documents

UV laser-induced photolysis of silacyclopent-3-ene: Unseparable photochemistry of reactant and product for chemical vapour deposition of Si/C/H polymer

Pola, Josef,Ouchi, Akihiko,Urbanova, Marketa,Koga, Yoshinori,Bastl, Zdenek,Subrt, Jan

, p. 246 - 250 (1999)

UV laser-induced photolysis of silacyclopent-3-ene in the gas phase is a clean extrusion of silylene yielding buta-1,3-diene. Silylene self-polymerisation and consequent deposition of SinH2n agglomerates is precluded by concurrently occurring photolysis of buta-1,3-diene. The solid polymeric deposit being produced through polymerisation steps involving both H2Si: and the products of the buta-1,3-diene photolysis makes the reaction suitable for chemical vapour deposition of Si/C/H films.

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