56668-59-8

Basic information

• Product Name: gallium - nickel (2:3)
• CAS NO: 56668-59-8
• Molecular Formula: Ga₂Ni₃
• Molecular Weight: 315.5262
• Mol File: 56668-59-8.mol
• Article Data: 5

Chemical Properties

• CAS DataBase Reference: gallium - nickel (2:3)(CAS DataBase Reference)
• NIST Chemistry Reference: gallium - nickel (2:3)(56668-59-8)
• EPA Substance Registry System: gallium - nickel (2:3)(56668-59-8)

Safety Data

• Hazardous Substances Data: 56668-59-8(Hazardous Substances Data)

Upstream product

• 7440-55-3 gallium 
• 7440-02-0 nickel 

Relevant articles and documents

Surface plasmons in NiGa and CoGa alloys

Electron energy losses at the surface of Ga, NiGa and CoGa have been studied by X-ray photoemission spectroscopy (XPS). These features are interpreted as being due to surface plasmons. For Ga metal the experimental result is in good agreement with the surface plasmon energy obtained by a free-electron model. At the surface of CoGa and NiGa alloys, the corresponding energy is about 1 eV higher than that of pure Ga metal. This result is discussed in the framework of a free-electron model as well.

Synthesis and crystal structures of the new metal-rich ternary borides Ni12AlB8, Ni12GaB8 and Ni 10.6Ga0.4B6-examples for the first B 5 zig-zag chain fragment

Single crystals of the new borides Ni12AlB8, and Ni10.6Ga0.4B6 were synthesized from the elements and characterized by XRD and EDXS measurements. The crystal structures were refined on the basis of single crystal data. Ni12AlB8 (oC252, Cmce, a=10.527(2), b=14.527(2), c=14.554(2) , Z=12, 1350 reflections, 127 parameters, R1(F)=0.0284, wR2(F2)=0.0590) represents a new structure type with isolated B atoms and B5 fragments of a BB zig-zag chain. Because the pseudotetragonal metric crystals are usually twinned. Ni10.6Ga0.4B6 (oP68, Pnma, a=12.305(2), b=2.9488(6), c=16.914(3) , Z=4, 1386 reflections, 86 parameters, R1(F)=0.0394, wR2(F2)=0.104) is closely related to binary Ni borides. The structure contains BB zig-zag chains and isolated B atoms. Ni12GaB8 is isotypical to the Al-compound (a=10.569(4), b=14.527(4) and c=14.557(5) ).

The nickel-rich part of the Ga-Ni phase diagram and the corresponding phase relations in the ternary Ga-Ni-Sb system

In the past years, metal/III-V compound semiconductor interfaces have been investigated intensively in order to find a suitable metallization scheme meeting the required performance, reproducibility and stability criteria. Equilibrium phase diagrams provide a base for understanding the interfacial reactions, hence solid state equilibria at 600 and 900°C in the Ga-Ni-Sb system have been experimentally determined and are presented in this article. In the course of the work the nickel-rich pan of the Ga-Ni phase diagram has been revised by means of DTA and the diffusion couple technique. This study was undertaken to clarify the true temperature range of stability for the compounds Ga2Ni3 and Ga9Ni13 that is of significant importance for establishing the Ga-Xi-Sb phase diagram. WILEY-VCH Verlag GmbH, 1998.