583050-70-8

Basic information

• Product Name: [1]Benzothieno[3,2-b][1]benzothiophene, 2,7-dioctyl-
• Synonyms: [1]Benzothieno[3,2-b][1]benzothiophene, 2,7-dioctyl-;2,7-Dioctyl[1]benzothieno[3,2-b][1]benzothiophene;DiC8-BTBT;C8-BTBT;C8-BTBT >=99% (HPLC)
• CAS NO: 583050-70-8
• Molecular Formula: C30H40S2
• Molecular Weight: 464.7686
• Mol File: 583050-70-8.mol

Chemical Properties

• Melting Point: 108-112°C
• Boiling Point: 595.9±45.0 °C(Predicted)
• Appearance: /
• Density: 1.069±0.06 g/cm3(Predicted)
• Storage Temp.: Refrigerator, Under inert atmosphere
• Solubility: Chloroform (Slightly), Ethyl Acetate (Slightly, Sonicated), Methanol (Slightly)
• CAS DataBase Reference: [1]Benzothieno[3,2-b][1]benzothiophene, 2,7-dioctyl-(CAS DataBase Reference)
• NIST Chemistry Reference: [1]Benzothieno[3,2-b][1]benzothiophene, 2,7-dioctyl-(583050-70-8)
• EPA Substance Registry System: [1]Benzothieno[3,2-b][1]benzothiophene, 2,7-dioctyl-(583050-70-8)

Safety Data

• WGK Germany: 3
• Hazardous Substances Data: 583050-70-8(Hazardous Substances Data)

Usage

Uses

Used in Organic Field-Effect Transistors (OFETs) Industry:
[1]Benzothieno[3,2-b][1]benzothiophene, 2,7-dioctylis used as a semiconductor material for high-performance OFETs due to its high field-effect mobility of 5.5-5.7 cm2/Vs and high On/Off ratio of 10^9. Its solution-processability with a solubility of 80 mg/mL allows for the fabrication of OFETs through cost-effective and scalable solution-based techniques, making it suitable for large-area and flexible electronics applications.

Upstream product

• 583050-67-3 1,1'-(benzo[b]benzo[4,5]thieno[2,3-d]thiophene-2,7-diyl)bis(octan-1-one) 
• 1003601-92-0 2,7-di(1-octynyl)[1]benzothieno[3,2-b][1]benzothiophene 

Relevant articles and documents

Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors

2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of ～107. Copyright

BENZODIFURAN DERIVATIVE AND ORGANIC THIN FILM TRANSISTOR

PROBLEM TO BE SOLVED: To provide a novel benzodifuran derivative as a coating type organic semiconductor material having high carrier mobility, high heat resistance and high solubility, and an organic semiconductor layer using the same. SOLUTION: The benzodifuran derivative is represented by the general formula (1) in the figure. (In the formula, substituents R1 and R2 are identical or different and represent hydrogen, bromine, iodine, C1-12 alkyl, C4-14 aryl, C2-14 alkynyl or C2-14 alkenyl; and T1 and T2 are identical or different and represent sulfur or oxygen.) COPYRIGHT: (C)2015,JPOandINPIT

Field-effect transistor

Disclosed is a field-effect transistor characterized by using a compound represented by the formula (1) below as a semiconductor material. (In the formula (1), X 1 and X 2 independently represent a sulfur atom, a selenium atom or a tellurium atom; and R 1 and R 2 independently represent an unsubstituted or halogeno-substituted C 1 -C 36 aliphatic hydrocarbon group.)